RF3802PCBA-411

RF3802 0 RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA • Power Amplifier Stage for Commercial Wireless Infrastructure Transmitter Applications GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3802 is specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance dual-stage amplifier achieves high output power over a broad frequency range. The RF3802 amplifier also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount AlN package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50 Ω operation. Various evaluation board configurations are available to address a broad range of wireless infrastructure applications: • AMPS/GSM850/EDGE850 • GSM900/EDGE900 • IS-95/CDMA2000/AMPS Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Pin 1 0.005 A -A0.0025 0.200 REF 0.024 0.200 0.180 REF 0.238 Dimensions in inches. 0.050 REF 0.078 REF 0.156 0.025 R.008 0.050 TYP 0.025 TYP 0.175 0.005 TYP 0.022 7 PL SCALE - 16:1 0.003 TYP Package Style: AlN Features • 5W Output Power • High Linearity • 35% Power-Added Efficiency • Thermally Enhanced AlN Packaging • Broadband Platform Design Approach VCC1 1 VREF 2 RF IN 3 VBIAS 4 Bias Circuit PACKAGE BASE GND 8 RF OUT/VCC2 7 RF OUT/VCC2 6 RF OUT/VCC2 5 RF OUT/VCC2 Ordering Information RF3802 GaAs HBT Pre-Driver Amplifier RF3802PCBA-410 Fully Assembled Evaluation Board - GSM850 RF3802PCBA-411 Fully Assembled Evaluation Board - GSM900 Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A6 050609 4-631 RF3802 Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Control Voltage (VREF) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Rating 9 9 2000 23 5:1 +85 +125 Unit VPC V mA dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall 850MHz Band Frequency P1dB Total Efficiency Total Power Added Efficiency Large Signal Power Gain Second Harmonic Third Harmonic Input Return Loss Output Return Loss OIP3 Specification Min. Typ. Max. Unit Condition IREF =22mA, VCC =VBIAS =VREF =8V, Temp=+25°C 869 36.0 35.5 34.5 17.5 36.5 36.5 35.5 18.5 894 37.0 39.0 38.0 19.5 -40 -40 12 12 Noise 15 15 41.0 46.0 48.0 49.0 6.4 MHz dBm dBm % % dB dBc dBc dB dB dBm dBm dBm dBm dB @ P1dB @ P1dB 20dBm