RF3809PCK-415

RF3809 0 RoHS Compliant & Pb-Free Product Typical Applications • GaAs Pre-Driver for Basestation Amplifiers • PA Stage for Commercial Wireless Infrastructure • Class AB Operation for NMT, GSM, DCS, PCS, and UMTS Transceiver Applications GaAs HBT PRE-DRIVER AMPLIFIER Product Description The RF3809 is a GaAs pre-driver power amplifier, specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range. The RF3809 also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surfacemount plastic-slug package. Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50 Ω operation. Various evaluation boards are available to address a broad range of wireless infrastructure applications: NMT 450MHz; GSM850MHz; GSM900MHz; DCS1800MHz; PCS1900MHz; and, UMTS2200MHz. 0.157 0.150 0.0192 0.0138 0.004 0.002 -A- 0.196 0.189 0.050 0.244 0.230 Shaded lead is pin 1. 0.066 0.056 EXPOSED DIE FLAG 0.126 0.088 8° MAX 0° MIN 0.0098 0.0075 0.035 0.016 0.099 0.061 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOIC-8 Features • High Output Power of 2.0W P1dB • High Linearity • High Power-Added Efficiency • Thermally-Enhanced Packaging • Broadband Platform Design Approach, 450MHz to 2500MHz VREF 1 2 3 4 Bias Circuit 8 VBIAS 7 RFOUT/VCC 6 RFOUT/VCC 5 NC NC RFIN NC Ordering Information RF3809 RF3809PCK-410 RF3809PCK-411 RF3809PCK-412 RF3809PCK-413 RF3809PCK-414 RF3809PCK-415 PACKAGE BASE GND GaAs HBT Pre-Driver Amplifier Fully Assembled Evaluation Board, 450MHz Fully Assembled Evaluation Board, 869MHz to 894MHz Fully Assembled Evaluation Board, 920MHz to 960MHz Fully Assembled Evaluation Board, 1800MHz to 1880MHz Fully Assembled Evaluation Board, 1930MHz to 1990MHz Fully Assembled Evaluation Board, UMTS Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 060607 4-623 RF3809 Absolute Maximum Ratings Parameter Supply Voltage RF - Input Power Operating Current Load VSWR Operating Temperature Storage Temperature Rating 9.0 See below 750 4:1 -40 to +85 -40 to +105 Unit V mA °C °C RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Caution! ESD sensitive device. Parameter Overall - 450MHz Frequency P1dB PIN, Maximum Total Efficiency Total Power Added Efficiency Gain (S21) Second Harmonic (2fo) Third Harmonic (3fo) Input Return Loss (S11) Output Return Loss (S22) Specification Min. Typ. Max. 420 +32.0 38.0 37.0 14 -32 -38 -20 -6.5 43.0 44.0 44.5 45.0 +33.0 45.0 44.0 13 -27 -36 -16 -5.5 46.5 48.0 50.0 48.0 480 +34.5 24.0 53.0 52.0 12 -19 -30 -11 -4.0 48.0 51.0 53.0 52.0 Unit MHz dBm dBm % % dB dBc dBc dB dB dBm dBm dBm dBm Condition IREF =15mA, VCC =8V, VREF =8V, VBIAS =8V, Temp=+25°C @P1dB @P1dB @P1dB @P1dB Two-Tone Specification OIP3 19dBm/tone 21dBm/tone 23dBm/tone 25dBm/tone 4-624 Rev A3 060607 RF3809 Parameter Overall - GSM800 Frequency P1dB PIN, Maximum Total Efficiency Total Power Added Efficiency Gain (S21) Second Harmonic (2fo) Third Harmonic (3fo) Input Return Loss (S11) Output Return Loss (S22) 869 +34.5 48.0 47.0 13.0 -32.0 -44.0 -26.0 -20.0 44.5 45.0 46.0 46.0 920 +34.0 43.0 42.0 13.0 -30.0 -44.0 -29.0 -9.5 46.5 46.0 45.0 46.0 +34.5 49.0 48.0 13.5 -28.0 -29.5 -21.0 -8.0 48.5 48.0 47.0 47.5 +35.5 50.5 49.5 13.5 -28.0 -38.0 -18.0 -13.0 45.5 46.5 47.0 48.0 894 +36.5 24 55.0 54.0 14.5 -26.0 -35.0 -12.0 -9.0 48.0 48.0 49.0 51.0 960 +35.0 24 54.0 53.0 14.0 -26.5 -37.0 -9.0 -7.0 50.5 51.0 50.0 49.0 MHz dBm dBm % % dB dBc dBc dB dB dBm dBm dBm dBm MHz dBm dBm % % dB dBc dBc dB dB dBm dBm dBm dBm IREF =15mA, VCC =8V, VREF =8V, VBIAS =8V, Temp=+25°C Specification Min. Typ. Max. Unit Condition @P1dB @P1dB @P1dB @P1dB Two-Tone Specification OIP3 19dBm/tone 21dBm/tone 23dBm/tone 25dBm/tone IREF =14mA, VCC =8V, VREF =8V, VBIAS =8V, Temp=+25°C Overall - GSM900 Frequency P1dB PIN, Maximum Total Efficiency Total Power Added Efficiency Gain (S21) Second Harmonic (2fo) Third Harmonic (3fo) Input Return Loss (S11) Output Return Loss (S22) @P1dB @P1dB @P1dB @P1dB Two-Tone Specification OIP3 19dBm/tone 21dBm/tone 23dBm/tone 25dBm/tone Rev A3 060607 4-625 RF3809 Parameter Overall - DCS1800 Frequency P1dB PIN, Maximum Total Efficiency Total Power Added Efficiency Gain (S21) Second Harmonic (2fo) Third Harmonic (3fo) Input Return Loss (S11) Output Return Loss (S22) 1805 +32.5 47.5 46.5 10.5 -32.0 -58.0 -25.0 -20.0 44.0 44.5 45.5 45.5 1930 +32.0 46.0 45.0 10.0 -35.0 -85.0 -28.0 -12.0 43.5 44.0 44.5 46.5 +32.5 47.5 46.5 10.5 -26.0 -65.0 -12.0 -9.0 45.5 45.5 46.0 48.0 +34.0 50.0 49.0 11.5 -24.0 -48.0 -15.0 -12.0 45.5 46.5 47.0 48.0 1880 +35.0 26 55.0 54.0 12.5 -20.0 -44.0 -8.0 -7.0 48.0 49.0 49.0 51.0 1990 +34.0 26 55.0 54.5 11.5 -21.0 -55.0 -8.0 -6.0 48.0 48.0 49.0 51.0 MHz dBm dBm % % dB dBc dBc dB dB dBm dBm dBm dBm MHz dBm dBm % % dB dBc dBc dB dB dBm dBm dBm dBm IREF =15mA, VCC =8V, VREF =8V, VBIAS =8V, Temp=+25°C Specification Min. Typ. Max. Unit Condition @P1dB @P1dB @P1dB @P1dB Two-Tone Specification OIP3 15dBm/tone 17dBm/tone 19dBm/tone 21dBm/tone IREF =15mA, VCC =8V, VREF =8V, VBIAS =8V, Temp=+25°C Overall - PCS1900 Frequency P1dB PIN, Maximum Total Efficiency Total Power Added Efficiency Gain (S21) Second Harmonic (2fo) Third Harmonic (3fo) Input Return Loss (S11) Output Return Loss (S22) @P1dB @P1dB @P1dB @P1dB Two-Tone Specification OIP3 19dBm/tone 21dBm/tone 23dBm/tone 25dBm/tone 4-626 Rev A3 060607 RF3809 Parameter UMTS 2100 Frequency P1dB PIN, Maximum Total Efficiency Total Power Added Efficiency Gain (S21) Second Harmonic (2fo) Third Harmonic (3fo) Input Return Loss (S11) Output Return Loss (S22) 2110 +32.0 41.5 40.5 9.5 -35.0 -56.0 -25.0 -20.0 43.5 44.0 44.5 43.5 7 245 14 +32.5 47.5 46.5 10.5 -32.0 -52.0 -15.0 -11.0 44.5 44.5 45.5 46.5 8 270 15 2170 +33.5 26 51.5 50.5 11.0 -26.5 -42.0 -8.0 -6.0 46.0 46.0 47.0 49.0 9 316 16 30 MHz dBm dBm % % dB dBc dBc dB dB dBm dBm dBm dBm V mA mA μA IREF =15mA, VCC =8V, VREF =8V, VBIAS =8V, Temp=+25°C Specification Min. Typ. Max. Unit Condition @P1dB @P1dB @P1dB @P1dB Two-Tone Specification OIP3 19dBm/tone 21dBm/tone 23dBm/tone 25dBm/tone Power Supply Power Supply Voltage Supply Current (ICC +IBIAS) Control Current (IREF) Power Down Current ICCQ for best IP3 and efficiency VREF =8V, VCC =8V VREF =0V, VCC =8V Rev A3 060607 4-627 RF3809 Pin 1 2 3 4 5 6 7 8 Pkg Base Function Description Control input to internal bias circuitry. VREF No connection. NC Input for RF signal. RFIN No connection. NC No connection. NC RFOUT/VCC RF output pin and VCC supply pin. RFOUT/VCC RF output pin and VCC supply pin. RF supply to internal bias circuitry. VBIAS Backside of package should be connected to a short path to ground. GND 4-628 Rev A3 060607 RF3809 Evaluation Board Schematic 400MHz (RF3809410) VREF P1 1 VREF BANANA JACK P2 1 VCC BANANA JACK P3 1 GND BANANA JACK R2 750 Ω R3 Open R4 Open R5 Open C16 220 pF C26 100 pF C24 100 pF C25 0.1 μF VCC C20 220 pF 1 C2 220 pF C3 12 pF 2 3 C1 Open 4 PACKAGE BASE GND 3809400- C15 0.1 μF C14 10 μF C13 1000 pF C12 220 pF P1-1 P2-1 R1 750 Ω C17 1000 pF C18 10 μF C19 0.1 μF C21 1000 pF C22 10 μF C23 0.1 μF Bias Circuit 8 7 6 5 L3 47 nH C4 2 pF L2 3.9 nH C5 Open C6 Open C7 Open C8 8.2 pF C9 Open C11 220 pF C10 100 pF 50 Ω μstrip J1 RF IN 50 Ω μstrip L1 8.2 nH J2 RF OUT Evaluation Board Schematic 800MHz to 1000MHz (CDMA800, ISM, EGSM) VREF P1 1 VREF BANANA JACK P2 1 VCC BANANA JACK P3 1 GND BANANA JACK R2 750 Ω R3 Open R4 Open R5 Open C16 33 pF C26 36 pF C24 100 pF C25 0.1 μF VCC C20 33 pF 1 C2 22 pF C3 5.1 pF 2 3 C1 Open 4 PACKAGE BASE GND 3809401- C15 0.1 μF C14 10 μF C13 1000 pF C12 33 pF P1-1 P2-1 R1 750 Ω C17 1000 pF C18 10 μF C19 0.1 μF C21 1000 pF C22 10 μF C23 0.1 μF Bias Circuit 8 7 6 5 L3 33 nH C4 2 pF L2 2.2 nH C5 Open C6 2 pF C7 Open C8 Open C9 Open C11 6.2 pF C10 Open 50 Ω μstrip J1 RF IN 50 Ω μstrip L1 2.7 nH J2 RF OUT Rev A3 060607 4-629 RF3809 Evaluation Board Schematic 869MHz to 894MHz (GSM800) (RF3809411) VREF P1 1 VREF BANANA JACK P2 1 VCC BANANA JACK P3 1 GND BANANA JACK R2 750 Ω R3 Open R4 Open R5 Open C16 33 pF C26 36 pF C24 100 pF C25 0.1 μF VCC C20 33 pF 1 C2 22 pF C3 6.2 pF 2 3 C1 Open 4 PACKAGE BASE GND 3809401- C15 0.1 μF C14 10 μF C13 1000 pF C12 33 pF P1-1 P2-1 R1 750 Ω C17 1000 pF C18 10 μF C19 0.1 μF C21 1000 pF C22 10 μF C23 0.1 μF Bias Circuit 8 7 6 5 L3 47 nH C4 1 pF L2 2.2 nH C5 Open C6 3.9 pF C7 Open C8 Open C9 Open C11 6.2 pF C10 Open 50 Ω μstrip J1 RF IN 50 Ω μstrip L1 2.7 nH J2 RF OUT Evaluation Board Schematic 920MHz to 960MHz (GSM900) (RF3809412) VREF P1 1 VREF BANANA JACK P2 1 VCC BANANA JACK P3 1 GND BANANA JACK R2 750 Ω R3 Open R4 Open R5 Open C16 33 pF C26 33 pF C24 100 pF C25 0.1 μF VCC C20 33 pF 1 C2 10 pF C3 5.1 pF 2 3 C1 1 pF 4 PACKAGE BASE GND 3809402- C15 0.1 μF C14 10 μF C13 1000 pF C12 33 pF P1-1 P2-1 R1 750 Ω C17 1000 pF C18 10 μF C19 0.1 μF C21 1000 pF C22 10 μF C23 0.1 μF Bias Circuit 8 7 6 5 L3 47 nH C4 0.5 pF L2 1.8 nH C5 Open C6 3.3 pF C7 Open C8 Open C9 Open C11 10 pF C10 Open 50 Ω μstrip J1 RF IN 50 Ω μstrip L1 2.2 nH J2 RF OUT 4-630 Rev A3 060607 RF3809 Evaluation Board Schematic 1805MHz to 1880MHz (DCS1800) (RF3809413) VREF P1 1 VREF BANANA JACK P2 1 VCC BANANA JACK P3 1 GND BANANA JACK R2 680 Ω R3 Open R4 Open R5 Open C16 10 pF C26 10 pF C24 100 pF C25 0.1 μF VCC C20 10 pF 1 C2 10 pF C3 3.9 pF C30 4.3 pF 2 3 C1 Open 4 PACKAGE BASE GND 3809403- C15 0.1 μF C14 10 μF C13 1000 pF C12 10 pF P1-1 P2-1 R1 680 Ω C17 1000 pF C18 10 μF C19 0.1 μF C21 1000 pF C22 10 μF C23 0.1 μF Bias Circuit 8 7 6 5 L3 24 nH C4 1.1 pF C31 5.6 pF C5 Open C6 Open C7 Open C8 0.5 pF C9 Open C11 3.9 pF C10 1 pF 50 Ω μstrip J1 RF IN 50 Ω μstrip J2 RF OUT Evaluation Board Schematic 1930MHz to 1990MHz (PCS1900) (RF3809414) VREF P1 1 VREF BANANA JACK P2 1 VCC BANANA JACK P3 1 GND BANANA JACK R2 680 Ω R3 Open R4 Open R5 Open C16 10 pF C26 10 pF C24 100 pF C25 0.1 μF VCC C20 10 pF 1 C2 12 pF C3 3.9 pF C30 3.3 pF 2 3 C1 Open 4 PACKAGE BASE GND 3809404- C15 0.1 μF C14 10 μF C13 1000 pF C12 10 pF P1-1 P2-1 R1 680 Ω C17 1000 pF C18 10 μF C19 0.1 μF C21 1000 pF C22 10 μF C23 0.1 μF Bias Circuit 8 7 6 5 L3 24 nH C4 1.1 pF C31 5.1 pF C5 Open C6 Open C7 Open C8 0.5 pF C9 Open C11 2.4 pF C10 1 pF 50 Ω μstrip J1 RF IN 50 Ω μstrip J2 RF OUT Rev A3 060607 4-631 RF3809 Evaluation Board Schematic UMTS (RF3809415) VREF P1 1 VREF BANANA JACK P2 1 VCC BANANA JACK P3 1 GND BANANA JACK R2 750 Ω R3 Open R4 Open R5 Open C16 10 pF C26 10 pF C24 100 pF C25 0.1 μF VCC C20 10 pF 1 C2 5.6 pF C3 3 pF C30 2.7 pF 2 3 C1 Open 4 PACKAGE BASE GND 3809405- C15 0.1 μF C14 10 μF C13 1000 pF C12 10 pF P1-1 P2-1 R1 750 Ω C17 1000 pF C18 10 μF C19 0.1 μF C21 1000 pF C22 10 μF C23 0.1 μF Bias Circuit 8 7 6 5 L3 24 nH C4 0.5 pF C31 4.3 pF C5 Open C6 1.1 pF C7 Open C8 Open C9 Open C11 2.4 pF C10 0.5 pF 50 Ω μstrip J1 RF IN 50 Ω μstrip J2 RF OUT 4-632 Rev A3 060607 RF3809 Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.023”, Board Material Rogers 4530 Rev A3 060607 4-633 RF3809 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3 μinch to 8 μinch gold over 180 μinch nickel. PCB Land Pattern Recommendation PCB land patterns for PFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. PCB Metal Land Pattern A = 1.14 x 0.71 B = 1.02 x 0.71 Typ. C = 3.96 x 4.44 Dimensions in mm. 5.93 Pin 1 A 1.27 Typ. B C B B 3.00 5.99 Typ. B B B B 1.90 3.81 Typ. PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. A = 1.30 x 0.86 B = 1.17 x 0.86 Typ. C = 4.11 x 4.60 Dimensions in mm. 5.93 Pin 1 A 1.27 Typ. B C B B 3.00 5.99 Typ. B B B B 1.90 3.81 Typ. 4-634 Rev A3 060607 RF3809 Thermal Pad and Via Design The DUT must be connected to the PCB backside ground through a low inductance, low thermal resistance path. The required interface is achieved with the via pattern shown below for both low inductance as well as low thermal resistance. The footprint provided below worked well on the RFMD 20mil thick Rogers 4350 PCB and also standard FR4. The vias are 8mil vias that are partially plated through and are finished to 8mils±2mils with a minimum plating of 1.5mil. Failure to place these vias within the DUT mounting area on the PCB in this prescribed manner may result in electrical performance and/or reliability degradation. Rev A3 060607 4-635 RF3809 Tape and Reel Information Carrier tape basic dimensions are based on EIA481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the boyd and the solder terminals from damaging stresses. The individual pocket design can vary from vendor to vendor, but wide and pitch will be consistent. Carrier tape is wound or placed on a shipping reel with a diameter of either 330mm (13inches) or 178mm (7inches). The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL level 2a to 5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier, ESD bag, which is placed in a cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rate as bakeable at 125°C. If baking is required, devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDECJ-STD-033A. The following table provides useful information for carrier tape and reels used for shipping the devices described in this document. Reel Diameter Inch (mm) 13 (330) 7 (178) RFMD Part Number RF3809TR13 RF3809TR7 Hub Diameter Inch (mm) 4 (102) 2.4 (61) Width (mm) 12 12 Pocket Pitch (mm) 8 8 Feed Single Single Units per Reel 2500 750 Carrier Tape Drawing with Part Orientation Notes: 1. All dimensions are in millimeters (mm). 2. Unless otherwise specified, all dimension tolerances per EIA-481. Ao = 6.70 ± 0.10 Bo = 5.40 ± 0.10 F = 5.50 ± 0.05 Ko = 2.10 ± 0.10 P = 8.00 ± 0.10 W = 12.00 +0.30/-0.10 4.00 ± 0.10 2.00 ± 0.05 Ø1.50±.10 1.75±.10 0.292 ±.013 15 inch Trailer Sprocket holes toward rear of reel Pin 1 Location PART NUMBER YYWW Trace Code PART NUMBER YYWW Trace Code Top View 15 inch Leader F PART NUMBER YYWW Trace Code PART NUMBER YYWW Trace Code W Bo P Ao Ko Direction of Feed 4-636 Rev A3 060607 RF3809 CDMA2K ACPR Performance for RS SMIQ03HD Sig Gen & FSU8 Spec Analyzer (1960 MHz, 882 MHz, & 450 MHz Source Signals) -50.0 (No DUT in Place) -52.0 -54.0 -56.0 -58.0 -60.0 ACPR @ 0.75 MHz 1960 MHz source ACPR @ 0.75 MHz 882 MHz source ACPR @ 0.75 MHz 450 MHz source -40.0 -42.0 -44.0 -46.0 -48.0 -50.0 -52.0 -54.0 W-CDMA ACPR Performance for RS SMIQ03HD Sig Gen & FSU8 Spec Analyzer (2140 MHz & 882 MHz Source Signals) ACPR @ 5MHz 2140 MHz source ACPR @ 5MHz 882 MHz source ACPR (dBc) -64.0 -66.0 -68.0 -70.0 -72.0 -74.0 -76.0 -78.0 -80.0 -6 -5 -4 -3 -2 -1 0 12 34 5 67 8 9 10 11 12 13 14 15 16 ACPR (dBc) -62.0 -56.0 -58.0 -60.0 -62.0 -64.0 -66.0 -68.0 -70.0 -72.0 -74.0 -76.0 -78.0 -80.0 -6 -5 -4 -3 -2 -1 0 12 34 56 78 9 10 11 12 13 14 15 16 Output Power (dBm) Output Power (dBm) RF3809410 @ 450 MHz CDMA2K SR1 and 9 Channels -35.0 ACPR @ 750 KHz -40.0 -45.0 -50.0 Efficiency (%) 35.0 -45.0 -50.0 30.0 -55.0 40.0 -40.0 RF3809411@ 882 MHz CDMA2K SR1 and 9 Channels 50.0 ACPR @ 750 KHz Efficiency (%) 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Efficiency (%) ACPR (dBc) -55.0 20.0 -60.0 15.0 -65.0 ACPR (dBc) -60.0 -65.0 -70.0 -75.0 -70.0 -75.0 -80.0 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 10.0 -80.0 5.0 -85.0 -90.0 0.0 Output Power (dBm) X Axis Label (units) 3809411 @ 882 MHz W-CDMA 64 Channels and No Clipping -35.0 ACPR @ 5MHz -40.0 Efficiency (%) 35.0 40.0 -45.0 30.0 -55.0 20.0 -60.0 15.0 -65.0 10.0 -70.0 5.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 0.0 Output Power (dBm) Rev A3 060607 Efficiency (%) ACPR (dBc) -50.0 25.0 4-637 Efficiency (%) 25.0 RF3809 RF3809412 @ 940 MHz EDGE EVM 20.0 EVM_rms(%) 18.0 16.0 EVM_peak(%) 18.0 16.0 20.0 EVM_rms(%) EVM_peak(%) RF3809413 @ 1840 MHz EDGE EVM EVM (rms %), EVM (peak %) 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 EVM (rms %), EVM (peak %) 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Output Power (dBm) Output Power (dBm) RF3809414 @ 1960 MHz CDMA2K SR1 and 9 Channels -40.0 ACPR @ 750 KHz -45.0 -50.0 -55.0 Efficiency (%) 45.0 40.0 -45.0 35.0 -40.0 50.0 -35.0 RF3809415 @ 2140 MHz W-CDMA UMTS 64 Channels and No Clipping 20.0 15.0 Efficiency (%) ACPR (dBc) ACPR (dBc) -60.0 -65.0 -70.0 -75.0 -80.0 -85.0 -90.0 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 30.0 25.0 20.0 15.0 -55.0 10.0 -60.0 -65.0 10.0 5.0 0.0 -70.0 ACPR @ 5MHz Efficiency (%) -75.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 5.0 0.0 26.0 Output Power (dBm) Output Power (dBm) 4-638 Rev A3 060607 Efficiency (%) -50.0 RF3809 RF3809410 Evaluation Board S-Parameters 25.0 20.0 15.0 S21 RF3809411 Evaluation Board S-Parameters 25.0 20.0 15.0 S21 10.0 10.0 S11, S21, S12, S22 (dB) S11, S21, S12, S22 (dB) 5.0 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 420.0 430.0 440.0 450.0 460.0 470.0 480.0 S12 S11 S22 5.0 0.0 -5.0 -10.0 S22 -15.0 -20.0 -25.0 S11 S12 -30.0 -35.0 -40.0 869.0 874.0 879.0 884.0 889.0 894.0 Frequency (MHz) Frequency (MHz) RF3809412 Evaluation Board S-Parameters 25.0 20.0 15.0 S21 RF3809413 Evaluation Board S-Parameters 25.0 20.0 15.0 10.0 S21 10.0 S11, S21, S12, S22 (dB) S11, S21, S12, S22 (dB) 5.0 0.0 -5.0 S22 5.0 0.0 -5.0 S22 -10.0 -15.0 -20.0 -25.0 -30.0 S11 -10.0 S11 -15.0 -20.0 -25.0 S12 S12 -30.0 -35.0 910.0 920.0 930.0 940.0 950.0 960.0 970.0 -35.0 -40.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 Frequency (MHz) Frequency (MHz) RF3809414 Evaluation Board S-Parameters 25.0 20.0 15.0 S21 RF3809415 Evaluation Board S-Parameters 25.0 20.0 15.0 S21 10.0 10.0 S11, S12, S21, S22 (dB) 5.0 0.0 -5.0 -10.0 -15.0 -20.0 -25.0 S12 S11 S22 S11, S21, S12, S22 (dB) 5.0 0.0 -5.0 S22 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 S11 -30.0 -35.0 -40.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 S12 2110.0 2120.0 2130.0 2140.0 2150.0 2160.0 2170.0 Frequency (MHz) Frequency (MHz) Rev A3 060607 4-639 RF3809 RF3809415 Junction Temperature at 2140 MHz 170.0 40.0 Thermal Resistance of RF3809 @ 2.14 GHz 35.0 160.0 30.0 T_j (TBASE = +85°C) 150.0 25.0 140.0 Rth (C/W) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 20.0 15.0 130.0 10.0 120.0 5.0 110.0 0.0 13.0 18.0 23.0 28.0 33.0 38.0 POUT (dBm) POUT (dBm) 4-640 Rev A3 060607