RF3816

Proposed 0 Typical Applications • Cellular Basestation Amplifiers and Transceivers • Gain Stage or Driver Amplifiers for Linear and Saturated Amplifiers RF3816 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz • Narrow and Broadband Commercial and Military Radio Designs E S Features RF3816 The RF3816 is a high-performance InGaP/GaAs general purpose RF and microwave gain block amplifier. This 50 Ω amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many small-signal applications. Designed with an external bias resistor, the RF3816 provides high output power and high gain over broad frequency range. This low-cost amplifier is packaged in a thermally efficient, industry standard, ceramic Micro-X package providing excellent ThetaJC performance. D W Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT Si CMOS N E Package Style: Micro-X, 4-Pin, Ceramic GaAs MESFET SiGe Bi-CMOS R • Reliable, Low-Cost HBT Design • 12.1dB Gain, +17.3dBm P1dB@1.0GHz • High P1dB of +14.7dBm@6.0GHz • Single 6V Power Supply Operation • 50 Ω I/O Matched • Thermally-Efficient Package 3 RF OUT N O T RF IN 1 FO GND 4 MARKING - R1 Ordering Information 2 GND Cascadable Broadband GaAs MMIC Amplifier DC to 6GHz (Bulk: 25 piece increment) RF3816SB 5-piece Sample Bag RF3816SR 100-piece Reel RF3816TR7 7” Reel (1,000 pieces) RF3816PCBA-410 Evaluation Board RF Micro Devices, Inc. Tel (336) 664 1233 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com NOT FOR NEW DESIGNS Functional Block Diagram Rev A2 041013 IG N S 0.200 sq. Typ R1 Product Description 45° + 1° 0.055 + 0.005 0.070 sq. 0.020 + 0.002 0.040 + 0.002 NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. 4-1 RF3816 Proposed Please contact RF Micro Devices Applications Engineering at (336) 678-5570 for more information. N O T 4-2 FO R N E W D E S Rev A2 041013 IG N S