RF3833

PRELIMINARY RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RF3833 is an input matched GaN transistor packaged in an air cavity copper package which provides excellent thermal stability through the use of advanced heat-sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Functional B RF3833 Package: Air-Cavity Cu Features ■ Advanced GaN HEMT Technology ■ Output Power of 25W ■ Advanced Heat-Sink Technology ■ 30MHz to 2000MHz Instantaneous Bandwidth ■ Input Internally Matched to 50Ω ■ 48V Operation Typical Performance    POUT 44.5dBm Gain 11.5dB Power Added Efficiency 50% (30MHz to 2000MHz) ■ -40°C to 85°C Operating Temperature ■ Large Signal Models Available ■ EAR99 Export Control Applications ■ Class AB Operation for Public Mobile Radio ■ Power Amplifier Stage for Commercial Wireless Infrastructure ■ General Purpose Tx Amplification ■ Test and Instrumentation ■ Civilian and Military Radar Functional Block Diagram Ordering Information RF3833S2 Sample bag with 2 pieces RF3833SB Bag with 5 pieces RF3833SQ Bag with 25 pieces RF3833SR Short Reel with 100 pieces RF3833TR7 7" Reel with 750 pieces RF3833PCBA-410 Evaluation Board: 30MHz to 2000MHz; 48V operation RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS140121 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 10 RF3833 PRELIMINARY Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V 50 V 36 dBm Operational Voltage RF - Input Power Ruggedness (VSWR) Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (Tc) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200 °C, 95% Confidence Limits)* 3E + 06 Hours 5.2 °C/W Thermal Resistance, RTH (junction to case) measured at TC = 850C, DC bias only Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. * MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: P DISS < (TJ – TC) / RTH J - C and TC = TCASE Nominal Operating Parameters Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Specification Parameter Unit Min Typ Condition Max Recommended Operating Conditions Drain Voltage (VDSQ) 48 Gate Voltage (VGSQ) V -2.5 Drain Bias Current 88 Can also be operated at 28V with reduced POUT V mA RF Input Power (PIN) 35 dBm Input Source VSWR 10:1 Maximum Gate Current (Ig) 15.25 mA P3dB, CW 2000 MHz Small signal 3dB bandwidth RF Performance Characteristics Frequency Range 30 Linear Gain 14.8 dB PIN = 0dBm, 30MHz to 2000MHz Power Gain 11.6 dB PIN = 33dBm, 30MHz to 2000MHz Gain Variation with Temperature -0.02 dB/ºC Input Return Loss (S11) -10 dB Output Power (P3dB) 44 dBm 30MHz to 2000MHz Power Added Efficiency (PAE) 45 % 30MHz to 2000MHz RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 10 RF3833 PRELIMINARY Specification Parameter Unit Min Typ Condition Max RF Functional Tests Test Conditions: VDSQ = 48V, IDQ = 88mA, CW, f = 2000MHz, T = 25ºC, Performance in a standard tuned test fixture VGSQ -3.1 V Power Gain 10.3 dB PIN = 33dBm -9 dB PIN = 33dBm 43.3 dBm PIN = 33dBm 48 % PIN = 33dBm Input Return Loss Output Power Power Added Efficiency (PAE) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 10 RF3833 PRELIMINARY Typical Performance in standard fixed tuned test fixture matched for 30MHz to 2000MHz (T = 25°C, unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 10 RF3833 PRELIMINARY Typical Performance in standard fixed tuned test fixture matched for 30MHz to 2000MHz (T = 25°C, unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 10 RF3833 PRELIMINARY Evaluation Board Schematic Evaluation Board Bill of Materials (BOM)* Item Value Manufacturer Manufacturer’s P/N C1, C2 4.7µF Murata GRM55ER72A47KA01L C3 1.0µF AVX Corp 12101C104KAZ2A C4,C5,C6 1000pF TDK Corp C2012X7R2A102K085A C7, C8 1000pF DLI C08BL102X-1ZN-X0T C9,C10 0.9pF ATC 800A0R9BT250X R3 820Ω Panasonic ERJ-3GEYJ821 0Ω Panasonic ERJ-3GSY0R00V L2 0.9µH Coilcraft 1008AF-901XJLB L3 0Ω Kamaya RMC1/10JPTP L1,R1,R2 *30MHz to 2000MHz RF3833PCBA-410 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 10 RF3833 PRELIMINARY Package Drawing (Dimensions in millimeters) Pin Names and Descriptions Pin Name 1 VGS Gate DC Bias pin 2 N/C No Internal Connection 3 RFIN 4-7 N/C Description RF Input No Internal Connection 8 RFOUT/VDS 9-10 N/C RF Output/Drain DC Bias pin No Internal Connection Backside GND Ground RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 10 RF3833 PRELIMINARY Bias Instruction for RF3833 Evaluation Board    ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connection RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG2. 4. Apply 48V to VD2. 5. Increase VG2 until drain current reaches 88mA or desired bias point. 6. Turn on the RF input.  Typical test data provided is measured to SMA connector reference plane, and include evaluation board/broadband bias network mismatch and losses RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 10 RF3833 PRELIMINARY Evaluation Board Layout Device Impedances* RF3833PCBA-410 (30MHz to 2000MHz) Z Source (Ω) Z Load (Ω) 30MHz 50.19 – j2.98 48.43 + j6.33 200MHz 48.56 – j4.78 48.72 – j2.79 500MHz 42.59 – j7.54 41.82 – j7.06 800MHz 36.23 – j5.85 34.86 – j4.75 Frequency 1000MHz 32.65 – j2.96 31.06 – j1.06 1200MHz 30.40 + j1.15 29.00 + j3.71 1500MHz 28.85 + J8.24 27.88 + j11.95 1800MHz 29.72 + j16.00 29.60 + j21.15 2000MHz 31.70 + j21.40 32.41 + j27.86 * Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth. Evaluation Board Matching Network RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. Evaluation Board Matching Network DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 10 RF3833 PRELIMINARY Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat-sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat-sinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140121 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 10