RF3854

RF3854 LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER RoHS Compliant & Pb-Free Product Package Style: QFN, 24-Pin, 4x4 MODE B MODE A I SIG N I SIG P VCC1 24 VCC2 1 23 22 21 20 19 18 RF OUT WB P RF OUT WB N RF OUT HB P RF OUT HB N RF OUT LB P RF OUT LB N Features W-CDMA High/Mid/Low Power Modes Quad-Band Direct Quadrature Modulator Variable Gain PA Drivers GMSK Bypass Amplifiers LO Frequency Doubler and Divider Baseband Filtering Qualified to Infrastructure Standards LO HB P 2 Note: The die flag is the chip's main ground. GND 17 16 15 14 13 12 GC LO HB N 3 DIV 2 +45° -45° Σ LO LB P 4 Flo x2 +45° -45° LO LB N 5 Mode Control and Biasing Power Control MODE C 6 7 MODE D 8 Q SIG N 9 Q SIG P 10 VREF 11 GC DEC Applications CDMA, GSM, and UMTS Basestation Architecture ISM Transceivers Broadband Fixed Wireless Access and Wireless Local Loop GMSK, QPSK, DQPSK, QAM Modulation Functional Block Diagram Product Description The RF3854 is a low noise, multi-mode, quad-band direct I/Q to RF modulator and PA driver solution designed for digital modulation applications ranging from 800MHz to 2000MHz. Frequency doublers, dividers and LO buffers are included to support a variety of LO generation options. Dynamic power control is supported through a single analog input giving 90dB of power control range for the W-CDMA mode and 40dB of power control in the other two modes. Three sets of RF outputs are provided: high band and low band low noise EDGE/GMSK outputs, as well as one wideband W-CDMA output. The device is designed for 2.7V to 3.3V operation, and is assembled in a plastic, 24-pin, 4mmx4mm QFN. Ordering Information RF3854 RF3854PCBA-41X Low Noise, Multi-Mode, Quad-Band, Quadrature Modulator and PA Driver Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 26 RF3854 Absolute Maximum Ratings Parameter Supply Voltage Storage Temperature Operating Ambient Temperature Input Voltage, any pin Input Power, any pin Rating -0.5 to 3.6 -40 to +150 -40 to +85 -0.5 to +3.6 +5 Unit V °C °C V dBm Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Specification Unit Min. Typ. Max. Output Performance with Modulated Baseband Inputs Low Band EDGE 8PSK Mode (GSM850/GSM900) Mode=Low Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Parameter Output Power Maximum Output Power with 8PSK Modulated Signal* Maximum VGC Minimum VGC Gain Range 0 +2.5 -39 42 -37 dBm dBm dB Condition VCC =2.7V, T=+25°C While meeting spectral mask While meeting spectral mask Difference between output power at GC=2.0V and GC=0.2V. Out-of-Band Emission Spectrum Emission Mask* Frequency Spacing 200kHz 250kHz 400kHz 600kHz to 1800kHz 1800kHz to 3000kHz 3000kHz to 6000kHz > 6000kHz -36 -43 -67 -73 -73 -73 -75 2 -40 4 3 -34 9 TBD TBD TBD dBc dBc dBc dBc dBc dBc dBc % dB % 30kHz BW 30kHz BW 30kHz BW 30kHz BW 100kHz BW 100kHz BW 100kHz BW 8PSK Modulation Error Vector Magnitude RMS* Origin Offset* Peak* Output Noise At FC ±20MHz* Relative Noise at: Maximum Gain Absolute Noise at: Maximum Gain All Gain Settings * Not tested in Production -156 -154 dBm dBm GC=2.0V, IQ=0VP-P IQ=1.2VP-P 8PSK -156 -152 dBc/Hz dBc/Hz GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V to 1.4V 2 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Parameter General Conditions Local Oscillator LO LB Input Frequency RF LB Output Frequency Input Power IQ Baseband Inputs IQ Level IQ Common Mode Input Bandwidth Baseband Filter Attenuation 0.7 20 1.2 1.2 1.0 VP-P V MHz dB At 20MHz offset 824 824 -6.0 0.0 915 915 +3.0 MHz MHz dBm 8PSK Input IQ signal driven differentially and in quadrature. Min. Specification Typ. Max. Unit Condition Output Performance with Modulated Baseband Inputs High Band EDGE 8PSK Mode (DCS1800/PCS1900) Mode=High Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Output Power Maximum Output Power with 8PSK Modulated Signal* Maximum VGC Minimum VGC Gain Range -1 +1.5 -40 42 -38 dBm dBm dB While meeting spectral mask While meeting spectral mask Difference between output power at GC=2.0V and GC=0.2V. VCC =2.7V, T=+25°C Out-of-Band Emission Spectrum Emission Mask* Frequency Spacing 200kHz 250kHz 400kHz 600kHz to 1800kHz 1800kHz to 3000kHz 3000kHz to 6000kHz > 6000kHz -36 -43 -67 -73 -73 -73 -75 1.3 -37 3 3 -30 11 TBD TBD TBD dBc dBc dBc dBc dBc dBc dBc % dB % 30kHz BW 30kHz BW 30kHz BW 30kHz BW 100kHz BW 100kHz BW 100kHz BW 8PSK Modulation Error Vector Magnitude RMS* Origin Offset* Peak* Output Noise At FC ±20MHz* Relative Noise at: Maximum Gain Absolute Noise at: Maximum Gain All Gain Settings * Not tested in Production -153 -151 dBm dBm GC=2.0V, IQ=0VP-P IQ=1.2VP-P 8PSK -154 -150 dBc/Hz dBc/Hz GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V to 1.4V Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 26 RF3854 Parameter General Conditions Local Oscillator LO HB Input Frequency RF HB Output Frequency Input Power IQ Baseband Inputs IQ Level IQ Common Mode Input Bandwidth Baseband Filter Attenuation 0.7 20 1.2 1.2 1.0 VP-P V MHz dB At 20MHz offset 1710 1710 -6.0 0.0 1910 1910 +3.0 MHz MHz dBm 8PSK Input IQ signal driven differentially and in quadrature. Min. Specification Typ. Max. Unit Condition Output Performance with Modulated Baseband Inputs W-CDMA Mode Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control Settings) Output Power Maximum Output Power with W-CDMA Modulated Signal* High Power Mode Medium Power Mode 3 -4 6 -1 dBm dBm GC=2.0V GC=1.5V Difference between output power at GC=2.0V and GC=0.2V. High Power Mode 90 dB Gain step when switching between power modes in either direction. ±0.5 TBD dB dB GC=1.4V GC=TBD VCC =2.7V, T=+25°C, while meeting 48dBc ALCR Gain Range Gain Step High Power to Medium Power Medium Power to Low Power Out-of-Band Emission Adjacent Channel Leakage Power Ratio (ALCR)* Channel Spacing ±5MHz ±10MHz 50 65 1.4 -152 -146 -146 * Not tested in Production dBc dBc %rms dBc/Hz dBc/Hz 3.84MHz relative to channel power 3.84MHz relative to channel power 3GPP W-CDMA GC=2.0V GC=2.0V to 1.5V Error Vector Magnitude RMS* Output Noise At FC ±40MHz* 4 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Parameter General Conditions Local Oscillator LO LB Input Frequency RF WB Output Frequency Input Power IQ Baseband Inputs IQ Level IQ Common Mode Input Bandwidth Baseband Filter Attenuation 8 10 0.8 1.2 11 VP-P V MHz dB At 40MHz offset 960 1920 -10.0 0.0 990 1980 +3.0 MHz MHz dBm 3GPP W-CDMA HQPSK, 1DPCCH+1DPDCH Input IQ signal driven differentially and in quadrature. Min. Specification Typ. Max. Unit Condition Output Performance with CW Baseband Inputs Wideband Mode Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control Settings) VGA and PA Driver Output Power W-CDMA Modulated* Output Power CW Gain Control Voltage Range Gain Control Range Gain Control Slope 2 0.2 92 73 -48 -50 -50 -50 -42 -41 -38 -23 3rd Harmonic of Modulation Suppression at FC-3x300kHz -55 -30 -30 -30 -30 -30 -30 -30 -10 -50 5 5 8 2.0 dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=1.0V and 0.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V VCC =2.7V, T=+25°C, LO=975MHz to 990MHz at -10dBm, IQ=540mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=0.8VP-P at HQPSK GC=2.0V Modulator Sideband Suppression * * * Carrier Suppression Spurious Outputs Spurious Output at Integer Multiples of FLO LB* FLO LB 4xFLO LB 6xFLO LB -60.0 -14.0 -47.0 +11.5 0 0 dBm dBm dBm dBm GC=2.0V, I/Q=540mVP-P at 100kHz FLO LB leakage Second harmonic of carrier Third harmonic of carrier I/Q=100kHz Output Compression Output P1dB* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 26 RF3854 Parameter Intermodulation Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. GC=2.0V Min. Specification Typ. Max. Unit Condition Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -37 dBc -40 dBc GC=1.5V Output Performance with CW Baseband Inputs Low Band Mode (GSM850/GSM900) Mode=Low Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) VGA and PA Driver Output Power 8PSK Modulated* Output Power CW * -44 Gain Control Voltage Range Gain Control Range Gain Control Slope 0.2 42 28 -36 -36 -36 -36 -36 -44 -44 * -44 -44 -40 3rd Harmonic of Modulation Suppression at FC-3x300kHz * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. -49 -30 -30 -30 -30 -30 -34 -34 -34 -34 -34 -40 0 +2.5 2.2 -1.2 -13.5 -30 -40 -37 2.0 +5 dBm dBm dBm dBm dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=0.5V and 1.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V VCC =2.7V, T=+25°C, LO=824MHz to 915MHz at 0dBm, IQ=800mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V, IQ=800mVP-P at 100kHz GC=1.5V, IQ=800mVP-P at 100kHz GC=1.0V, IQ=800mVP-P at 100kHz GC=0.5V, IQ=800mVP-P at 100kHz GC=0.2V, IQ=800mVP-P at 100kHz Modulator Sideband Suppression * * * * Carrier Suppression 6 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Parameter Spurious Outputs Spurious Outputs at Integer Harmonics of 1/2xFLOHB* FLO HB (3/2)xFLO LB -62.0 -19.0 +7.0 dBm dBm dBm Min. Specification Typ. Max. Unit FLO/2 Mode Condition GC=2.0V, I/Q=800mVP-P at 100kHz Second harmonic of carrier and LO leakage Third harmonic of carrier I/Q=100kHz Output Compression Output P1dB* Output Performance with CW Baseband Inputs Low Band Mode (GSM850/GSM900), cont’d Mode=Low Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Intermodulation Output IP3* +20.0 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -48 dBc GC=2.0V Low Band Bypass Mode (GSM850/GSM900) Mode=Low Band Bypass (see Control Logic Truth Table for Mode Control Settings) PA Driver GMSK Input Power* GMSK Output Power Output Impedance* -3 5.0 0 7.5 50 -161 -159 +3 10.0 dBm dBm Ω dBc/Hz AM+PM noise, LO=0dBm VCC =2.7V At LO LB input from a 50 Ω source. At RF LB output Output Noise At FC ±20MHz* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 26 RF3854 Specification Unit Min. Typ. Max. Output Performance with CW Baseband Inputs High Band Mode (DCS1800/PCS1900) Mode=High Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Parameter VGA and PA Driver Output Power 8PSK Modulated* Output Power CW * -44 Gain Control Voltage Range Gain Control Range Gain Control Slope 0.2 42 28 -45 -45 -45 -45 -45 -40 -40 * -40 -39 -37 3rd Harmonic of Modulation Suppression at FC-3x300kHz -50 -30 -30 -30 -30 -30 -34 -34 -33 -30 -30 -40 0 0 2.2 2 -1.6 -17.6 -30 -40 -37 2.0 +6.0 dBm dBm dBm dBm dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=0.5V and 1.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=0.2V, No I/Q adjustment GC=2.0V FLOx2 Mode GC=2.0V, I/Q=800mVP-P at 100kHz -70.0 -25.0 -40.0 +8.0 dBm dBm dBm dBm FLO LB leakage Second harmonic of carrier Third harmonic of carrier I/Q=100kHz Condition VCC =2.7V, T=+25°C, LO=1710MHz to 1910MHz at 0dBm, IQ=800mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=1.2VP-P 8PSK GC=2.0V, IQ=800mVP-P at 100kHz GC=1.5V, IQ=800mVP-P at 100kHz GC=1.0V, IQ=800mVP-P at 100kHz GC=0.5V, IQ=800mVP-P at 100kHz GC=0.2V, IQ=800mVP-P at 100kHz Modulator Sideband Suppression * * * * Carrier Suppression Spurious Outputs Spurious Outputs at Integer Harmonics of 1/2xFLOHB FLO LB 4xFLO LB 6xFLO LB Output Compression Output P1dB* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. 8 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Specification Unit Min. Typ. Max. Output Performance with CW Baseband Inputs High Band Mode (DCS1800/PCS1900), cont’d Mode=High Band FLOx1 (see Control Logic Truth Table for Mode Control Settings) Parameter Intermodulation Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. Condition Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -53 -42 dBc GC=2.0V Output Performance with CW Baseband Inputs Wideband Mode Mode=Wideband FLOx2 (see Control Logic Truth Table for Mode Control Settings) VGA and PA Driver Output Power W-CDMA Modulated* Output Power CW Gain Control Voltage Range Gain Control Range Gain Control Slope 2 0.2 92 73 -48 -50 -50 -50 -42 -41 -38 -23 3rd Harmonic of Modulation Suppression at FC-3x300kHz -55 -30 -30 -30 -30 -30 -30 -30 -10 -50 5 5 8 2.0 dBm dBm V dB dB/V dBc dBc dBc dBc dBc dBc dBc dBc dBc Difference between output power at GC=2.0V and GC=0.2V Calculated between GC=1.0V and 0.5V GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V, No I/Q adjustment GC=1.5V, No I/Q adjustment GC=1.0V, No I/Q adjustment GC=0.5V, No I/Q adjustment GC=2.0V VCC =2.7V, T=+25°C, LO=975MHz to 990MHz at -10dBm, IQ=540mVP-P** at 100kHz, unless otherwise noted GC=2.0V, IQ=0.8VP-P at HQPSK GC=2.0V Modulator Sideband Suppression * * * Carrier Suppression Spurious Outputs Spurious Output at Integer Multiples of FLO LB* FLO LB 4xFLO LB 6xFLO LB -60.0 -14.0 -47.0 +11.5 0 0 dBm dBm dBm dBm GC=2.0V, I/Q=540mVP-P at 100kHz FLO LB leakage Second harmonic of carrier Third harmonic of carrier I/Q=100kHz Output Compression Output P1dB* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 26 RF3854 Parameter Intermodulation Output IP3* +20 dBm GC=2.0V. Extrapolated from IM3 with two baseband tones at 90kHz and 110kHz applied differentially, in quadrature, at both I and Q inputs, each tone 400mVP-P. GC=2.0V Min. Specification Typ. Max. Unit Condition Intermodulation IM3 tone at FC +70kHz and FC +130kHz relative to tones at FC +90kHz and FC +110kHz -37 dBc -40 dBc GC=1.5V High Band Bypass Mode (DCS1800/PCS1900) Mode=High Band Bypass (see Control Logic Truth Table for Mode Control Settings) PA Driver GMSK Input Power* GMSK Output Power Output Impedance* -3 4.0 0 6.8 50 -161 -159 +3 9.0 dBm dBm Ω dBc/Hz AM+PM noise, LO=0dBm VCC =2.7V At LO LB input from a 50 Ω source. At RF LB output Output Noise At FC ±20MHz* * Not tested in Production ** Provides the same output power as modulated signal with associated crest factor. 10 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Parameter General Specifications Operating Range Supply Voltage Temperature 2.7 -40 3.3 +85 V °C Refer to Logic Control Truth Table for Mode Control Pin Voltages. Sleep Wideband FLOx1 (high power) * (medium power) * (low power) * Wideband FLOx2 (high power) (medium power) (low power) High Band FLOx2 Low Band FLO/2 High Band Bypass Low Band Bypass High Band FLOx1 Low Band FLOx1 0.4VP-P, this mode should be used for WCDMA TX power levels below -20dBm (measured at antenna). 12 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Pin 1 Function VCC2 Description Supply for LO buffers, frequency doubler and dividers. Interface Schematic VCC2 Modulator and VGA 2 LO HB P High band local oscillator input (1800MHz). In “low band FLO/2” modes the signal (LOHBP-LOHBN) undergoes a frequency division of 2 to provide the low band LO signal for the modulator. In “high band FLOx1” modes the signal (LOHBP-LOHBN) is used as the high band LO signal for the modulator. In “high band bypass” a modulated DCS1800/PCS1900 signal (LOHBPLOHBN) is switched into the RF signal path. The modulator is disabled and the signal is routed to the RFOutHb outputs through a differential PA driver amplifier. The LOHBP input is AC-coupled internally. The noise performance, carrier suppression at low output powers and sideband suppression all vary with LO power. The optimum LO power is between -3dBm and +3dBm. The device will work with LO powers as low as -20dBm however this is at the expense of higher phase noise in the LO circuitry and poorer sideband suppression. The input impedance should be externally matched to 50 Ω. The port can be driven either differentially or single ended. The port impedance does not vary significantly between active and power down modes. VCC LO HB P LO HB N 3 LO HB N 4 LO LB P The complementary LO input for both LOHBP LO signals. See pin 2. In any of the modes the LOHB input may be driven either single ended or differentially. If the LO is driven single ended then the PCB board designer can ground this pin. It is recommended that if this pin is grounded that it is kept isolated from the GND1 pin and the die flag ground. All connections to any other ground should be made through a ground plane. Poor routing of this ground signal can significantly degrade the LO leakage performance. Low band local oscillator input (900MHz). In “wideband FLOx2” and “high band FLOx2” modes the signal (LOLBPLOLBN) is doubled in frequency to provide the LO signal for the modulator. V In “Low band FLOx1” modes the signal (LOLBP-LOLBN) is used as the LO signal for the modulator. In “Low band Bypass” a modulated GSM900 signal (LOLBP-LOLBN) is switched into the RF signal path. The modulator is disabled and the signal is routed to the RFOutLb outputs through a differential PA driver amplifier. This LOLBP input is AC-coupled internally. The noise performance, carrier suppression at low output powers and side- LO LB P band suppression performance are functions of LO power. The optimum LO power is between -3dBm and +3dBm. The device will work with LO powers LO LB N as low as -20dBm however this is at the expense of higher noise performance at high output powers and poorer sideband suppression. The input impedance should be externally matched to 50 Ω. The port impedance does not vary significantly between active and powered modes. CC 5 LO LB N The complementary LO input for both LOLBP LO signals. In any of the modes the LOLB input may be driven either single ended or differentially. If the LO is driven single ended then the PCB board designer can ground this pin. It is recommended that if this pin is grounded that it is kept isolated from the GND1 pin and the die flag ground. All connections to any other ground should be made through a ground plane. Poor routing of this GndLO signal can significantly degrade the LO leakage performance. See pin 4. Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 13 of 26 RF3854 Pin 6 Function MODE C Description Chip enable control pin. See the Logic Truth table. CMOS Logic inputs: Logic 0=0V to 0.4V; Logic 1=1.4V to VCC. Interface Schematic V CC2 7 8 MODE D Q SIG N Mode control pin. See the Logic Truth table. CMOS Logic inputs: Logic 0=0V to 0.4V; Logic 1=1.4V to VCC. Quadrature Q channel negative baseband input port. Best performance is achieved when the QSIGP and QSIGN are driven differentially with a 1.2V common mode DC voltage. The recommended differential drive level (VQSIGP -VQSIGN) is 1.2VP-P for EDGE, 0.8VP-P for WCDMA modulation and 1.0VP-P for GMSK modulation. This input should be DC-biased at 1.2V. In sleep mode an internal FET switch is opened, the input goes high impedance and the modulator is debiased. Phase or amplitude errors between the QSIGP and QSIGN signals will result in a common-mode signal which may result in an increase in the even order distortion of the modulation in the output spectrum. DC offsets between the QSIGP and QSIGN signals will result in increased carrier leakage. Small DC offsets may be deliberately applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out the LO leakage. The optimum corrective DC offsets will change with mode, frequency and gain control. Common-mode noise on the QSIGP and QSIGN should be kept low as it may degrade the noise performance of the modulator. Phase offsets from quadrature between the I and Q baseband signals results in degraded sideband suppression. Quadrature Q channel negative baseband input port. See pin 8. Voltage reference decouple. External 10nF decoupling capacitor to ground. The voltage on this pin is typically 1.67V when the chip is enabled. The voltage is 0V when the chip is powered down. The purpose of this decoupling capacitor is to filter out low frequency noise (20MHz) on the gain control lines. Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage. A voltage of around 2.5V on this pin indicates that the die flag under the chip is not grounded and the chip is not biased correctly. Gain control voltage decouple with an external 1nF decoupling capacitor to ground. The voltage on this pin is a function of gain control (GC) voltage when the chip is enabled. The voltage is 0V when the chip is powered down. The purpose of this decoupling capacitor is to filter out low frequency noise (20MHz) on the gain control lines. The size capacitor on the GC DEC line will effect the settling time response to a step in gain control voltage. A 1nF capacitor equates to around 200ns settling time and a 0.5nF capacitor equates to a 100ns settling time. There is a trade-off between settling time and noise contributions by the gain control circuitry as gain control is applied. Poor positioning of the VREF decoupling capacitor can cause a degradation in LO leakage. See pin 6. V CC2 x1 9 10 Q SIG P VREF See pin 8. VCC2 4 kΩ + 11 GC DEC VCC2 4 kΩ + 14 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Pin 12 Function GC Description Gain control voltage. Maximum output power at 2.0V. Minimum output power at 0V. When the chip is enabled the input impedance is 10kΩ to 1.67VDC. When the chip is powered down a FET switch is opened and the input goes high impedance. Interface Schematic VCC2 4 kΩ 10 kΩ - 1.7 V + 13 RF OUT LB N Differential low band PA driver amplifier output. This output is intended for low band (GSM850/900) operation and drives a differential SAW. A bypass mode allows the low band PA driver amplifier’s input to be switched between the signal from the modulator and the signal applied at LOLB. This enables a GMSK-modulated signal on the LOLB input to be switched into the RF signal path. The output is an open collector. The outputs are matched off-chip. VCC VCC VCC RF OUT LB P RF OUT LB N 14 15 RF OUT LB P RF OUT HB N Complementary differential low band PA driver amplifier output. See pin 13. Differential high band PA Driver amplifier output. This output is intended for DCS1800/PCS1900 band operation. A bypass mode allows the high band PA driver amplifier’s input to be switched between the signal from the modulator and the signal applied at LOHB. This enables a GMSK-modulated DCS1800/PCS1900 signal on the LOHB input to be switched into the RF signal path. The output is an open collector. The outputs are matched off-chip. See pin 13. VCC VCC VCC RF OUT HB P RF OUT HB N 16 17 RF OUT HB P RF OUT WB N Complementary differential high band PA driver amplifier output. See pin 15. Differential high band PA driver amplifier output. This output is intended for wide band (W-CDMA) applications. The output is an open collector. The output are matched off-chip. See pin 15. VCC VCC VCC RF OUT WB P RF OUT WB N 18 19 RF OUT WB P GND Complementary differential wideband PA driver amplifier output. See pin 17. Ground. See pin 17. Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 15 of 26 RF3854 Pin 20 21 Function MODE A VCC1 Description Mode control pin. See the Logic Truth table. CMOS Logic inputs: Logic 0=0V to 0.4V; Logic 1=1.4V to VCC. Supply for modulator, VGA and PA driver amplifiers. Interface Schematic See pin 6. VCC1 LO Quadrature Generator and Buffers GND1 22 I SIG P 23 24 Pkg Base I SIG N MODE B DIE FLAG In-phase I channel positive baseband input port. Best performance is achieved when the ISIGP and ISIGN are driven differentially with a 1.2V common mode DC voltage. The recommended differential drive level (VISIGP -VISIGN) is 1.2VP-P for EDGE, 0.8VP-P W-CDMA modulation and 1.0VP-P for GMSK modulation. This input should be DC-biased at 1.2V. In sleep mode an internal FET V switch is opened, the input goes high impedance and the modulator is debiased. Phase or amplitude errors between the ISIGP and ISIGN signals will result x1 in a common-mode signal which may result in an increase in the even order distortion of the modulation in the output spectrum. DC offsets between the ISIGP and ISIGN signals will result in increased carrier leakage. Small DC offsets may be deliberately applied between the ISIGP/ISIGN and QSIGP/QSIGN inputs to cancel out the LO leakage. The optimum corrective DC offsets will change with mode, frequency and gain control. Common-mode noise on the ISIGP and ISIGN should be kept low as it may degrade the noise performance of the modulator. Phase offsets from quadrature between the I and Q baseband signals results in degrades sideband suppression. In-phase I channel negative baseband input port. See pin 22. See pin 22. CC2 Mode control pin. See the Logic Truth table. CMOS Logic inputs: Logic 0=0V to 0.4V; Logic 1=1.4V to VCC. Ground for LO section, modular, biasing, variable gain amplifier, and substrate. See pin 6. 16 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 LO Frequency Planning Options for European 3GPP W-CDMA/EDGE Recommended Frequency Plan: Frequency Doubler/Divide by 2/GMSK Modulator Bypass Modes Modulation Output Frequency Band LO Port LO Frequency Range Format Band GSM850 GSM850 GSM900 GSM900 DCS1800 DCS1800 PCS1900 PCS1900 W-CDMA1950 Lower Limit Upper Limit 824MHz 824MHz 880MHz 880MHz 1710MHz 1710MHz 1850MHz 1850MHz 1920MHz 849MHz 849MHz 915MHz 915MHz 1785MHz 1785MHz 1910MHz 1910MHz 1980MHz EDGE 8PSK GSM GMSK EDGE 8PSK GSM GMSK EDGE 8PSK GSM GMSK EDGE 8PSK GSM GMSK 3GPP W-CDMA LOHB LOLB LOHB LOLB LOLB LOHB LOLB LOHB LOLB Lower Limit Upper Limit 1648MHz 824MHz 1760MHz 880MHz 855MHz 1710MHz 925MHz 1850MHz 960MHz 1698MHz 849MHz 1830MHz 915MHz 892.5MHz 1785MHz 955MHz 1910MHz 990MHz FLO/2 Divide by 2 FLO_bypass Bypass, GMSK-modulated LO FLO/2 Divide by 2 FLO_bypass Bypass, GMSK-modulated LO FLOx2 Frequency Doubler FLO_bypass Bypass, GMSK-modulated LO FLOx2 Frequency Doubler FLO_bypass Bypass, GMSK-modulated LO FLOx2 Frequency Doubler Comments On Frequency LO with GMSK Modulator Bypass Modes Modulation Output Frequency Band LO Port Format Band GSM850 GSM850 GSM900 GSM900 DCS1800 DCS1800 PCS1900 PCS1900 W-CDMA1950 Lower Limit Upper Limit 824MHz 824MHz 880MHz 880MHz 1710MHz 1710MHz 1850MHz 1850MHz 1920MHz 849MHz 849MHz 915MHz 915MHz 1785MHz 1785MHz 1910MHz 1910MHz 1980MHz EDGE 8PSK GSM GMSK EDGE 8PSK GSM GMSK EDGE 8PSK GSM GMSK EDGE 8PSK GSM GMSK 3GPP W-CDMA LOLB LOLB LOLB LOLB LOHB LOHB LOHB LOHB LOHB LO Frequency Range Lower Limit Upper Limit 824MHz 824MHz 880MHz 880MHz 1710MHz 1710MHz 1850MHz 1850MHz 1920MHz 849MHz 849MHz 915MHz 915MHz 1785MHz 1785MHz 1910MHz 1910MHz 1980MHz Comments FLOx1 On Frequency FLO_bypass Bypass, GMSK-modulated LO FLOx1 On Frequency FLO_bypass Bypass, GMSK-modulated LO FLOx1 On Frequency FLO_bypass Bypass, GMSK-modulated LO FLOx1 On Frequency FLO_bypass Bypass, GMSK-modulated LO FLOx1 On Frequency Rev A1 DS070313 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 17 of 26 RF3854 Control Logic Truth Table Mode Description Mode A Sleep Wideband FLOx2 (High Power) Modulator and frequency doubler enabled Wideband FLOx2 (Medium Power) Modulator and frequency doubler enabled Wideband FLOx2 (Low Power) Modulator and frequency doubler enabled High Band FLOx2 Modulator and frequency doubler enabled Low Band FLO/2 Modulator and divide by 2 enabled X 1 Input Logic Mode B 0 0 Active RF I/Os Mode D 0 0 LoLbP LoLbN RFOutWb P RFOutWb N LoLbP LoLbN RFOutWb P RFOutWb N LoLbP LoLbN RFOutWb P RFOutWb N LoLbP LoLbN RFOutHb P RFOutHb N Comment Expected Mode of Operation Sleep Bands: 1920MHz to 1980MHz Modulation: 3GPP W-CDMA Bands: 1920MHz to 1980MHz Modulation: 3GPP W-CDMA Bands: 1920MHz to 1980MHz Modulation: 3GPP W-CDMA Bands: DCS1800 or PCS1900 Modulation: GMSK, TDMA and 8PSK EDGE Mode C 0 1 Sleep Mode Frequency Doubler/Divide by 2 Options 1 0 1 1 1 0 0 1 1 1 1 1 1 1 0 1 LoHbP LoHbN Bands: GSM900 or GSM850 RFOutLb P Modulation: GMSK, TDMA and RFOutLb N 8PSK EDGE LoLbP LoLbN RFOutLb P RFOutLb N Bands: GSM850 or GSM900 Modulation: GMSK GMSK Modulator Bypass Options Low Band Bypass Modulator bypass enabled High Band Bypass Modulator bypass enabled X 1 0 0 X 1 1 0 LoHbP LoHbN Bands: DCS1800 or PCS1900 RFOutHb P Modulation: GMSK RFOutHb N LoHbP LoHbN Bands: 1920MHz to 1980MHz RFOutWb P Modulation: 3GPP W-CDMA RFOutWb N LoHbP LoHbN Bands: 1920MHz to 1980MHz RFOutWb P Modulation: 3GPP W-CDMA RFOutWb N LoHbP LoHbN Bands: 1920MHz to 1980MHz RFOutWb P Modulation: 3GPP W-CDMA RFOutWb N LoHbP LoHbN Bands: DCS1800 or PCS1900 RFOutHb P Modulation: GMSK, TDMA and RFOutHb N 8PSK EDGE LoLbP LoLbN RFOutLb P RFOutLb N Bands: GSM900 to GSM850 Modulation: GMSK, TDMA and 8PSK EDGE On-Frequency LO Options Wideband FLOx1 (High Power) Modulator and on-frequency LO enabled Wideband FLOx1 (Medium Power) Modulator and on-frequency LO enabled Wideband FLOx1 (Low Power) Modulator and on-frequency LO enabled High Band FLOx1 Modulator and on-frequency LO enabled Low Band FLOx1 Modulator and on-frequency LO enabled 0 0 1 0 0 0 1 1 0 0 0 1 0 1 1 1 0 1 0 1 18 of 26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS070313 RF3854 Application Information The baseband inputs of the RF3854 must be driven with balanced signals. Amplitude and phase matching