RF3866TR7

RF3866 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER „ VD1 NC VD2 NC 14 NC 13 RF OUT NC 4 12 NC 11 AC GND2 6 7 8 10 ew 9 NC AC GND1 5 Functional Block Diagram Product Description The RF3866 is a low noise amplifier with a high output IP3. The amplifier is self-biased from a single voltage supply with 50: input and output ports. The useful frequency range is from 400MHz to 3800MHz. A 0.8dB noise figure and 36dBm OIP3 performance is achieved with a 5V VDD, 180mA. Current can be increased to raise OIP3 while having minimal effect on noise figure. The IC is featured in a standard QFN, 20-pin, 5mmx5mm package. N ot Fo „ NC 2 rN „ First Stage WiMAX LNA/Linear Driver GSM900, CDMA, PCS, UMTS LNA/Linear Drive WLAN LNA High Gain Linear Amplification 15 NC RF IN 3 Applications „ NC 1 INTERSTAGE IN „ 16 NC „ 17 es ig n „ 18 INTERSTAGE OUT „ Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 400MHz to 3800MHz Operation QFN20, 5mmx5mm Package 19 D „ 20 NC Features NC Package Style: QFN, 20-Pin, 5mmx5mm Ordering Information RF3866 RF3866PCK-410 Wide Bandwidth, High Linearity Low Noise Amplifier/Linear Driver Fully Assembled Evaluation Board with 5 Sample Parts 1.8GHz to 3.8GHz Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS130515 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 11 RF3866 Absolute Maximum Ratings Parameter Rating Supply Voltage Input RF Level (See Note 1) Unit 6 V +10 dBm 150 per stage mA Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C 150 °C Current Drain, IDD Junction Temperature (TJ) ESD Rating - Human Body Model (HBM) Class 1B Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. MSL2 es ig n Moisture Sensitivity Level Caution! ESD sensitive device. Note 1. Max continuous RF IN is +10dBm. The max transient RF IN is +20dBm. Parameter Min. Specification Typ. Max. Unit High Band 3300 3800 180 20 Noise Figure 0.9 37 Output P1dB 22 S11 -15 S22 S12 Mid Band Current Gain Output P1dB S11 S22 S12 dB dBm f1 =3500MHz, f2 =3501MHz dBm dB 2700 MHz 180 220 mA VDD =5V 30 32 dB +25°C, VDD =5V, IDD =180mA, 2000MHz unless specified 0.8 1.0 dB 25.0 dBm dB dB 34 36 21.0 22.5 N ot Output IP3 +25°C, VDD =5V, IDD =180mA, 3500MHz unless specified -17 1800 28 Noise Figure VDD =5V dB -33 Fo Frequency mA rN Output IP3 220 ew Current Gain MHz D Frequency Condition dBm -10 f1 =2000MHz, f2 =2001MHz dB -16 dB -40 dB Low Band Frequency 700 1100 MHz 220 mA VDD =5V dB +25°C, VDD =5V, IDD =180mA, 850MHz unless specified Current 180 Gain 32 Noise Figure 1.0 dB OIP3 37 dBm 22.5 dBm S11 -10 dB S22 -12 dB OP1dB 2 of 11 f1 =850MHz, f2 =851MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130515 RF3866 S12 -48 dB 30 °C/W Thermal ThetaJC Parameter Min. Specification Typ. Max. Dissipated power=VDD*(IDD1 +IDD2) Unit Condition Thermal ThetaJC 30 °C/W Dissipated power=VDD*(IDD1 +IDD2) Power Supply 2.5 5.0 6.0 V Operating Current 130 180 220 mA VDD =5V, R3=open N ot Fo rN ew D es ig n Device Operating Voltage DS130515 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 11 RF3866 Not connected. RF input pin. 50: matched. This pin is DC-blocked. Not connected. AC ground. Shunt cap may be added for tuning. Not connected. Interstage RF output. This signal is brought off-chip in case a bandpass filter is needed. es ig n Not connected. Interstage RF input. Not connected. AC ground. Shunt resistor may be added to increase IDD and OIP3. Not connected. RF output pin. 50: matched. This pin is DC-blocked Not connected. D 10 11 12 13 14 15 16 17 18 19 20 Pkg Base Description Not connected. Not connected. Not connected. Bias voltage. 2.5V to 6.0V applied through bias inductor. ew 8 9 Function NC NC RF IN NC AC GND1 NC INTERSTAGE OUT NC INTERSTAGE IN NC AC GND2 NC RF OUT NC NC NC VD2 NC VD1 NC GND Not connected. Bias voltage. 2.5V to 6.0V applied through bias inductor. Not connected. rN Pin 1 2 3 4 5 6 7 Ground connection and heat sink. Fo Package Drawing N ot -A- 2 PLCS 0.10 C A 0.05 C 0.90 0.80 5.00 SQ. 2.75 TYP 0.20 REF 0.70 0.60 0.05 0.00 0.10 C B 2 PLCS 12° MAX 0.10 C B 2 PLCS -B- -C- SEATING PLANE 2.37 TYP 4.75 SQ. 0.10 C A 0.60 0.24 TYP 0.35 0.23 PIN 1 ID 0.20 R 3.20 SQ. 3.00 0.75 0.50 TYP 0.65 Dimensions in mm. 4 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130515 RF3866 Evaluation Board Schematic VD1 VD2 R1 0: C1 10 nF C2 10 nF C3 C4 20 L2 19 18 1 2 16 14 3 L3 17 15 R2 RF IN es ig n L1 13 RF OUT 12 C5 5 7 8 ew 6 D 4 L4 9 R3 10 R5 C7 11 C8 C6 rN R3 is DNP for standard 180mA current draw. If R3 is added, the IDD will increase. A 20: R3 will raise the current to achieve higher linearity. L1 (nH) L2 (nH) L3 (nH) Fo Components N ot L4 (nH) C3 (pF) DS130515 700MHz to 1100MHz 1.8GHz to 3.8GHz 12 8.2 8.2 4.7 18 4.7 DNP DNP 10 18 C4 (pF) 10 18 C5 (pF) 100 100 C6 (pF) DNP DNP C7 (pF) DNP 10 C8 (pF) DNP 0.5 R2 (:) 0 0 R3 (:) DNP DNP R5 (:) 6.8pF 15pF 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 11 RF3866 5V Gain versus Temperature 5V OIP3 versus Temperature 34.0 38.5 33.0 38.0 32.0 37.5 31.0 OIP3 (dBm) Gain (dB) 37.0 30.0 29.0 28.0 36.5 36.0 35.0 26.0 -40 25 85 25.0 34.5 24.0 34.0 1500.0 2000.0 2500.0 3000.0 1500.0 Frequency (MHz) es ig n 35.5 27.0 2000.0 -40 25 85 2500.0 3000.0 Frequency (MHz) 5V Noise Figure versus Temperature D 5V P1dB versus Temperature 1.6 23.6 23.4 1.4 22.8 rN P1dB (dBm) 23.0 22.6 22.4 22.2 Noise Figure (dB) ew 23.2 Fo 21.8 1500.0 2000.0 2500.0 1.0 0.8 0.6 -40 22.0 1.2 -40 25 85 25 85 0.4 3000.0 1500.0 2000.0 Frequency (MHz) 22.5 22.0 40.0 -40 25 85 39.5 39.0 21.0 OIP3 (dBm) Gain (dB) 21.5 3000.0 5V OIP3 versus Temperature N ot 5V Gain versus Temperature 23.0 2500.0 Frequency (MHz) 20.5 20.0 19.5 38.5 38.0 37.5 19.0 37.0 -40 25 85 18.5 18.0 36.5 3.2 3.4 3.6 Frequency (MHz) 6 of 11 3.8 3.2 3.4 3.6 3.8 Frequency (MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130515 RF3866 5V P1dB versus Temperature 5V Noise Figure versus Temperature 23.8 1.8 23.7 1.6 23.6 1.4 23.4 23.3 23.2 1.2 1.0 0.8 0.6 23.1 0.4 23.0 -40 25 85 22.9 0.2 22.8 0.0 3.2 3.4 3.6 3.2 3.8 Frequency (MHz) es ig n Noise Figure (dB) P1dB (dBm) 23.5 3.4 3.6 -40 25 85 3.8 Frequency (MHz) D RF3866-410 1800 - 3800 MHz Evaluation Board OIP3 vs R3 value R3 = 20 ohm sees best trade-off vs frequency 40.5 ew 40 39.5 38.5 R3 = unpopulated R3 = 27 ohm rN OIP3 (dBm) 39 38 37.5 Fo 37 R3 = 20 ohm R3 = 10 ohm 36.5 36 1850 2000 N ot 1700 2150 2300 2450 2600 2750 2900 3050 3200 3350 3500 Frequency (MHz) RF3866-410 1800 - 3800 MHz Evaluation Board Icc vs R3 value R3 = 20 ohm for optimum IP3 vs Frequency 250 240 230 R3 = unpopulated R3 = 27 ohm 220 R3 = 20 ohm R3 = 15 ohm R3 = 10 ohm 210 200 190 R3 = unpopulated DS130515 R3 = 27 ohm R3 = 20 ohm R3 = 15 ohm R3 = 10 ohm 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 11 RF3866 400MHz to 1000MHz Application Schematic VD1 VD2 0 ohm 10 nF 10 nF 10 pF 20 27 nH 27 nH 19 18 17 1 15 2 14 0 ohm 3 4 5 100 pF 6 7 8 Frequency Fo rN 15 pF ew 18 nH 13 D RF IN VCC ICC 9 RF OUT 12 11 10 10 pF Gain OIP3 OP1dB NF MHz V mA dB dBm dBm dB 400 5 174.532 32.69 36.02 22.08 1.75 600 5 174.513 34.48 37.93 22.31 1.45 800 5 174.456 33.06 37.89 21.9 1.1 1000 5 174.585 30.77 37.17 22 1.25 N ot 8 of 11 16 es ig n 10 pF 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130515 RF3866 700MHz to 2200MHz Application Schematic VD1 VD2 0 ohm 10 nF 10 nF 15 pF 20 27 nH 19 10 nH 18 1 14 0 ohm 13 D 3 4 ew 10 nH 5 100 pF 7 Fo rN 6 Frequency VCC ICC 8 12 11 9 1.5 pF Gain RF OUT 10 150 ohm OIP3 OP1dB NF MHz V mA dB dBm dBm dB 700 5 174.687 27.02 35.53 22.15 1.45 N ot DS130515 16 15 2 RF IN 17 es ig n 15 pF 1200 5 174.876 26.14 36.76 21.99 1 1700 5 174.903 26.22 35.49 21.38 0.85 2200 5 174.918 24.99 36.13 22.15 0.85 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 11 RF3866 Theory of Operation Low noise figure and high gain/IP3 make RF3866 ideal for use as both a receive LNA and a transmit driver for cellular/DCS/PCS/UMTS and WiMax platforms, in addition to many other general purpose applications. Standard evaluation boards cover 700MHz to 1100MHz and 1800MHz to 3800MHz. Viewing the data sheet evaluation board schematic, refer below for purpose and function of external components: • R2/L4/C6 (0:/unpopulated/unpopulated on standard evaluation boards): These unused components were placed for convenience and flexibility when needed to optimize matching for an out of band application. • L3/C5/C7: Place to optimize input match and enhance out of band low frequency stability. es ig n • R3: Optionally placed to increase bias current and IP3. 20: value is found to be the best case (see graph section). • L1/C3/R5/C8: Interstage tuning. • L2/C4: Influence output return loss. RF3866 has internal DC-blocking capacitors at RFin/RFout. In addition, it has been shown that impedance seen looking out at pins 7/9/17/19 influence response. As a result, two port s-parameters become non-applicable. if matching is desired for frequency bands outside of those provided with standard evaluation boards, application schematics within this data sheet for 400MHz to 1000MHz and 700MHz to 2200MHz serve as examples. D Detailed discussion of each begins here with the 400MHz to 1000MHz schematic. In this application the design goals were as follows: ew • Input and output return loss better than 10dB over the entire 600MHz bandwidth. • IP3 and compression point in line with standard evaluation board performance. These goals were attained, with additional specifications shown in tabular data accompanying schematic: rN • Noise figure = 1.75dB to 1.25dB versus frequency • Gain = 32.7dB to 30.8dB at band edges. Fo To extend the standard 700MHz to 1100MHz evaluation board response down to 400MHz, the following components were changed (refer to reference designators in evaluation board schematic): • C7 adjusted from unpopulated to 15pF • L1 adjusted from 12nH to 27nH N ot • L2 adjusted from 8.2nH to 27nH • “R5” adjusted from 6.8pF to 10pF In effect, all components were placed or increased in value to shift response down in frequency. Broadband characteristic of the part allowed return loss/performance to extend out to 1000MHz. Next, consider the application schematic shown for 700MHz to 2200MHz. The design goals in this case: • Maintain noise figure/IP3/OP1dB within reason to that seen on standard board. • Obtain 2dB gain flatness over the 1500MHz bandwidth, along with better than 10dB input/output return loss. 10 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130515 RF3866 Again, start with the standard 700MHz to 1100MHz evaluation board and make the following changes: • L3 adjusted from 18nH to 10nH • L1 adjusted from 12nH to 27nH • L2 adjusted from 8.2nH to 10nH • “R5” adjusted from 6.8pF to 1.5pF • “C8” adjusted from unpopulated to 150: • C3 and C4 adjusted from 10pF to 15pF Non-intuitive changes: • “C8” value of 150: optimized interstage match for gain flatness. es ig n Intuitive changes were made at L3 and R5. Lowering L3 extends input match higher in frequency. Lowering “R5” to 1.5pF helps meet gain flatness specification by reducing gain on the low end of the band. • L1/L2/C3/ C4 chosen via trial and error to further influence gain and meet return loss specification. N ot Fo rN ew D The above matching discussion should be helpful when considering use in frequency bands outside of those covered by standard evaluation boards. it can be noted here that application schematics and standard boards collectively cover 100% of the usable bandwidth from 400MHz to 3800MHz. As such, choosing from these available schematics should accommodate the majority of applications that come about. DS130515 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 11 of 11