RF3928B

RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    65V Operation Typical Performance   Pulsed Output Power 380W Small Signal Gain 13dB Drain Efficiency 50% -40°C to 85°C Operating Temperature Applications  GND BASE Integrated Matching Components for High Terminal Impedances   RF OUT VD Pin 2 Optimized Evaluation Board Layout for 50 Operation   RF IN VG Pin 1 (CUT ) Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers Functional Block Diagram Product Description The RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RF3928B is a matched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Ordering Information RF3928B 380W GaN Wideband Pulsed Power Amplifier RF3928BPCBA-410 Fully Assembled Evaluation Board Optimized for 2.8GHz to 3.4GHz; 65V Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2011, RF Micro Devices, Inc. Prelim DS111208 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 11 RF3928B Absolute Maximum Ratings Parameter Rating Unit Drain Source Voltage 150 V Gate Source Voltage -8 to +2 V Gate Current (IG) 155 mA Operational Voltage 65 V Ruggedness (VSWR) 3:1 Storage Temperature Range -55 to +125 Operating Temperature Range (TL) -40 to +85 The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. C 0C 0 200 Operating Junction Temperature (TJ) 0 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. C Human Body Model Class 1A MTTF (TJ