RF5110

RF5110 3V GSM POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 x 3 APC1 APC2 VCC 14 Features Single 2.7V to 4.8V Supply Voltage +36dBm Output Power at 3.5V 32dB Gain with Analog Gain Control 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM VCC1 GND1 RF IN GND2 1 2 3 4 16 15 13 12 11 10 9 RF OUT RF OUT RF OUT RF OUT 5 VCC2 6 VCC2 7 NC Applications 3 V GSM Cellular Handsets 3 V Dual-Band/Triple-Band Handsets GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment Functional Block Diagram Product Description The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110 can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space. Ordering Information RF5110 RF5110 PCBA 3V GSM Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A0 DS050318 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 2f0 NC 8 1 of 14 RF5110 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Total Efficiency Min. Specification Typ. Max. Unit Condition Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V, PIN =+4.5dBm, Freq=880MHz to 915MHz, 37.5% Duty Cycle, pulse width=1731 μs 880 to 915 800 to 950 33.8 33.1 50 57 12 5 34.5 MHz MHz dBm dBm % % % +9.5 -72 dBm dBm See evaluation board schematic. Using different evaluation board tune. Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V Temp=+60°C, VCC =3.3V, VAPC1,2 =2.8V At POUT,MAX, VCC =3.6V POUT =+20dBm POUT =+10dBm RBW=100kHz, 925MHz to 935MHz, POUT,MIN