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RF5110GPCBA-410

RF5110GPCBA-410

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF5110GPCBA-410 - 3V GSM POWER AMPLIFIER - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF5110GPCBA-410 数据手册
RF5110G 3V GSM POWER AMPLIFIER RoHS & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 APC1 APC2 VCC 14 Features Single 2.7V to 4.8V Supply Voltage +36dBm Output Power at 3.5V 32dB Gain with Analog Gain Control 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM VCC1 GND1 RF IN GND2 1 2 3 4 16 15 13 12 11 10 9 RF OUT RF OUT RF OUT RF OUT 5 VCC2 6 VCC2 7 NC Applications 3 V GSM Cellular Handsets 3 V Dual-Band/Triple-Band Handsets GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment FM Radio Applications: 150MHz/220MHz/ 450MHz/865MHz/915MHz Functional Block Diagram Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110G can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space. Ordering Information RF5110G 3V GSM Power Amplifier RF5110GPCBA-410 Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A4 DS071026 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 2f0 NC 8 1 of 22 RF5110G Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Total Efficiency Min. Specification Typ. Max. Unit Condition Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V, PIN =+4.5dBm, Freq=880MHz to 915MHz, 37.5% Duty Cycle, pulse width=1731 μs 880 to 915 800 to 950 33.8 33.1 50 57 12 5 34.5 MHz MHz dBm dBm % % % +9.5 -72 dBm dBm See evaluation board schematic. Using different evaluation board tune. Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V Temp=+60°C, VCC =3.3V, VAPC1,2 =2.8V At POUT,MAX, VCC =3.6V POUT =+20dBm POUT =+10dBm RBW=100kHz, 925MHz to 935MHz, POUT,MIN
RF5110GPCBA-410
物料型号: - 型号:RF5110G - 封装:QFN, 16-Pin, 3 x 3

器件简介: - RF5110G是一款由RFMD公司生产的高功率、高效率的功率放大器模块,专为GSM和GPRS应用提供高性能。该设备采用先进的GaAs HBT工艺制造,设计用于作为GSM手持数字移动通信设备和其他800MHz至950MHz频段应用中的最终RF放大器。该设备包含一个板上功率控制器,提供超过70dB的控制范围,并且可以通过模拟电压输入进行功率控制,还提供低逻辑电平待机操作。RF5110G可以与RF5111一起使用,实现双频段操作。

引脚分配: - Pin 1: VCC1,为前置放大器阶段和中间阶段匹配提供电源。 - Pin 2: GND1,前置放大器阶段的地连接。 - Pin 3: RF IN,RF输入。 - Pin 4: GND2,驱动阶段的地连接。 - Pin 5: VCC2,为驱动阶段和中间阶段匹配提供电源。 - Pin 6: VCC2,同Pin 5。 - Pin 7: NC,未连接。 - Pin 8: 2F0,第二谐波陷波连接。 - Pin 9: RF OUT,RF输出和输出阶段的电源。 - Pin 10: RF OUT,同Pin 9。 - Pin 11: RF OUT,同Pin 9。 - Pin 12: RF OUT,同Pin 9。 - Pin 13: NC,未连接。 - Pin 14: VCC,为偏置电路提供电源。 - Pin 15: APC2,输出阶段的功率控制。 - Pin 16: APC1,驱动阶段和前置放大器的功率控制。

参数特性: - 单2.7V至4.8V供电电压 - 在3.5V下达到+36dBm的输出功率 - 具有模拟增益控制的32dB增益 - 效率为57% - 工作频率范围800MHz至950MHz - 支持GSM和E-GSM

功能详解: - RF5110G是一款三阶段设备,具有32dB的增益,在满功率时。因此,完全饱和输出所需的驱动为+3dBm。该部件仅需要一个正3V电源即可运行至满规格。功率控制通过一个单独的引脚接口提供,并且有一个单独的功率降低控制引脚。最终阶段的地通过封装背面的大垫实现。第一和第二阶段的地分别通过单独的地引脚引出,与输出隔离。这些地应该直接通过通孔连接到PCB地平面,并且不要与输出地连接,以在PCB顶层形成一个所谓的“本地地平面”。输出通过宽输出垫引出,并形成RF输出信号路径。

应用信息: - 3V GSM手机 - 3V双频段/三频段手机

封装信息: - 封装:QFN, 16-Pin, 3 x 3
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