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RF5110G_07

RF5110G_07

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF5110G_07 - 3V GSM POWER AMPLIFIER - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF5110G_07 数据手册
RF5110G 3V GSM POWER AMPLIFIER RoHS & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 APC1 APC2 VCC 14 Features Single 2.7V to 4.8V Supply Voltage +36dBm Output Power at 3.5V 32dB Gain with Analog Gain Control 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM VCC1 GND1 RF IN GND2 1 2 3 4 16 15 13 12 11 10 9 RF OUT RF OUT RF OUT RF OUT 5 VCC2 6 VCC2 7 NC Applications 3 V GSM Cellular Handsets 3 V Dual-Band/Triple-Band Handsets GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment FM Radio Applications: 150MHz/220MHz/ 450MHz/865MHz/915MHz Functional Block Diagram Product Description The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110G can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space. Ordering Information RF5110G 3V GSM Power Amplifier RF5110GPCBA-410 Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A4 DS071026 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 2f0 NC 8 1 of 22 RF5110G Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Total Efficiency Min. Specification Typ. Max. Unit Condition Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V, PIN =+4.5dBm, Freq=880MHz to 915MHz, 37.5% Duty Cycle, pulse width=1731 μs 880 to 915 800 to 950 33.8 33.1 50 57 12 5 34.5 MHz MHz dBm dBm % % % +9.5 -72 dBm dBm See evaluation board schematic. Using different evaluation board tune. Temp=25°C, VCC =3.6V, VAPC1,2 =2.8V Temp=+60°C, VCC =3.3V, VAPC1,2 =2.8V At POUT,MAX, VCC =3.6V POUT =+20dBm POUT =+10dBm RBW=100kHz, 925MHz to 935MHz, POUT,MIN
RF5110G_07
1. 物料型号: - 型号为RF5110G,由RFMD公司生产,是一款3V GSM功率放大器。

2. 器件简介: - RF5110G是一款高功率、高效率的功率放大器模块,适用于GSM和GPRS应用。该设备采用先进的GaAs HBT工艺制造,设计用于作为GSM手持数字移动通信设备和其他800MHz至950MHz频段应用的最终RF放大器。该设备包含内置功率控制,提供超过70dB的控制范围,并且可以通过模拟电压输入进行控制。

3. 引脚分配: - 1号引脚VCC1:为前置放大器阶段和中间阶段匹配提供电源。 - 2号引脚GND1:前置放大器阶段的地连接。 - 3号引脚RF IN:RF输入,是一个50Ω输入。 - 4号引脚GND2:驱动阶段的地连接。 - 5号引脚VCC2:为驱动阶段和中间阶段匹配提供电源。 - 6号引脚VCC2:同5号引脚。 - 7号引脚NC:未连接。 - 8号引脚2F0:第二谐波陷阱连接。 - 9号引脚RF OUT:RF输出和输出阶段电源。 - 10-12号引脚RF OUT:同9号引脚。 - 13号引脚NC:未连接。 - 14号引脚VCC:为偏置电路提供电源。 - 15号引脚APC2:输出阶段的功率控制。 - 16号引脚APC1:驱动阶段和前置放大器的功率控制。

4. 参数特性: - 工作频率范围:880MHz至915MHz。 - 最大输出功率:在25°C,3.6V供电,VAPC1,2=2.8V条件下为34.5dBm。 - 总效率:在最大功率输出,3.6V供电条件下为57%。 - 输入功率为最大功率输出:+4.5dBm至+9.5dBm。

5. 功能详解: - RF5110G设计用于3V GSM手机和3V双频/三频手机。该设备还可以与RF5111一起使用,实现双频操作。封装在超小型3mmx3mmx1mm塑料包中,最小化所需的板空间。

6. 应用信息: - 适用于商业和消费系统、便携式电池供电设备以及FM广播应用(150MHz/220MHz/450MHz/865MHz/915MHz)。
RF5110G_07 价格&库存

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