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RF5111PCBA-41X

RF5111PCBA-41X

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF5111PCBA-41X - 3V DCS POWER AMPLIFIER - RF Micro Devices

  • 数据手册
  • 价格&库存
RF5111PCBA-41X 数据手册
RF5111 3V DCS POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 VCC2 VCC2 Single 2.7V to 4.8V Supply Voltage +33dBm Output Power at 3.5V 27dB Gain with Analog Gain Control 50% Efficiency 1700MHz to 1950MHz Operation Supports DCS1800 and PCS1900 16 VAT EN 1 RF IN 2 GND1 3 VCC1 4 5 APC1 15 14 2f0 13 12 RF OUT 11 RF OUT 10 RF OUT 9 NC 8 NC Features 6 APC2 Applications 3 V DCS1800 (PCN) Cellular Handsets 3 V DCS1900 (PCS) Cellular Handsets 3 V Dual-Band/Triple-Band Handsets Commercial and Consumer Systems Portable Battery-Powered Equipment GPRS Compatible Functional Block Diagram Product Description The RF5111 is a high-power, high-efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 handheld digital cellular equipment and other applications in the 1700MHz to 2000MHz band. On-board power control provides over 65dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5111 can be used together with the RF5110 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space. Ordering Information RF5111 RF5111PCBA-41X 3V DCS Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A1 DS060921 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. VCC VCC2 7 1 of 14 RF5111 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC) Enable Voltage (VAT_EN) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 -0.5 to +3.0 1500 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V V mA dBm % °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Min. Specification Typ. Max. Unit Condition Temp=25 °C, VCC =3.6V, VAPC1,2 =2.8V, VAT_EN =0V, PIN =+5.5dBm, Freq=1710MHz to 1910MHz, 37.5% Duty Cycle, pulse width=1731 μs 1710 to 1785 1850 to 1910 1700 to 2000 +32.3 +32 +30.4 +33 +32.8 +32.5 49 15 10 MHz MHz MHz dBm dBm dBm % % % +10.0 -79 dBm dBm See application schematic for tuning details. A different tuning is required. Temp=+25°C, VCC =3.6V, VAPC1,2 =2.8V Temp=+25°C, VCC =3.3V, VAPC1,2 =2.8V Temp=+60°C, VCC =3.3V, VAPC1,2 =2.8V At POUT,MAX, VCC =3.6V POUT =+20dBm POUT =+10dBm RBW=100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz, POUT,MIN
RF5111PCBA-41X 价格&库存

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