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RF5117

RF5117

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF5117 - 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER - RF Micro Devices

  • 数据手册
  • 价格&库存
RF5117 数据手册
RF5117 0 RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11B WLAN Applications • IEEE802.11G WLAN Applications • 2.5GHz ISM Band Applications Product Description The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside ground. The RF5117 is designed to maintain linearity over a wide range of supply voltage and power output. -A- 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER • Commercial and Consumer Systems • Portable Battery-Powered Equipment • Spread-Spectrum and MMDS Systems 2 PLCS 0.10 C A 3.00 1.50 TYP 2 2 PLCS 0.10 C B 0.70 0.65 0.05 C 0.90 0.85 0.05 0.00 3.00 0.10 C B 2 PLCS 2.75 SQ 0.10 C A 2 PLCS 0.60 0.24 TYP 0.10 M C A B 0.30 0.18 PIN 1 ID R.20 1.45 SQ. 1.15 0.50 0.30 0.50 12° MAX -C- 1.37 TYP -B- SEATING PLANE Dimensions in mm. NOTES: 1. Shaded pin is lead 1. 2 Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 3x3 Features • Single 3.3V Power Supply • +30dBm Saturated Output Power VCC VCC NC NC • 26dB Small Signal Gain • High Linearity 12 RF OUT 11 RF OUT 10 RF OUT 16 RF IN 1 BIAS GND1 2 PWR SEN 3 PWR REF 4 5 VREG1 15 14 13 • 1800MHz to 2800MHz Frequency Range • +17dBm PO, 11G,
RF5117 价格&库存

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