RF5152PCBA-41X

RF5152 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm VC1 VC2 NC 16 15 14 13 12 RF OUT/ VC3 Features Single Power Supply 3.0V to 3.6V 34dB Typical Small Signal Gain 50 Ω Input and Interstage Matching 2400MHz to 2500MHz Frequency Range +18dBm, 2.5%EVM (typ.), 130mA@VCC =3.3V NC 1 NC Match RF IN 2 Match Match 11 RF OUT RF IN 3 10 RF OUT Bias NC 4 5 VCC 6 VB1/ VB2 7 VB3 8 NC 9 PDETECT Applications IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems Functional Block Diagram Product Description The RF5152 is a linear, medium-power, high-efficiency, three-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, QFN with a backside ground. The RF5152 is designed to maintain linearity over a wide range of supply voltages and power outputs. Ordering Information RF5152 RF5152PCBA-41X 3V to 3.6V, 2.4GHz to 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A10 DS061221 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 10 RF5152 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture Sensitivity Rating -0.5 to +5.0 -0.5 to +3.5 600 +5 -10 to +85 -40 to +150 JEDEC Level 2 Unit V VDC mA dBm °C °C Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Parameter Overall Frequency Output Power EVM* IP3 Gain Gain Variance Input Impedance Output VSWR Min. Specification Typ. Max. Unit Condition Temperature=+25°C, VCC =3.3V, VREG =2.8V, Frequency=2450MHz, pulsed at 1% to 100% duty cycle, circuit per evaluation board schematic 2.40 18 2.5 33 32 49 34 50 2.50 GHz IEEE802.11g IEEE802.11n IEEE802.11g modulation, 54Mbit/s, 64QAM, OFDM modulation 3.3 37 1.5 51 10:1 % dBm dB ±dB Ω RMS, mean -11dBm Pin -15°C to +85°C Internally Matched Input and Interstage The PA is stable, no spurs above -43dBm Power Detector (P_detect) POUT =8dBm POUT =18dBm 0.7 3.0 2.7 85 45 1 300 0.2 0.9 3.3 2.8 130 75 2 -15 700 0.3 1.1 3.6 3.0 170 105 6 -10 1000 VDC VDC V VDC mA mA mA dB nS Output stable to within 90% of final gain RF POUT =+18dBm, VCC =3.3V, 54Mbps OFDM