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RF5163PCBA-WD

RF5163PCBA-WD

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF5163PCBA-WD - 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF5163PCBA-WD 数据手册
RF5163 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package: QFN, 16-Pin, 4x4 Features Single 3.3V or 5V Power Supply +33dBm Saturated Output Power (typ.) 20dB Large Signal Gain (typ.) 2.0% EVM @ +26dBm, 54Mbps (typ.) Separate Power Detect/Power Down Pins 1800MHz to 2500MHz Frequency Range VCC1 VCC1 14 VCC GND 13 12 RF OUT 11 RF OUT 10 RF OUT Bias 9 GND 8 NC 16 RF IN 1 VREG1GND 2 P DOWN 3 P DETECT 4 5 VREG1 15 VREG2 802.11b/g/n Access Points PCS Communication Systems 2.4GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Broadband Spread-Spectrum Systems Functional Block Diagram Product Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 4mmx4mm, 16-pin, leadless chip carrier with a backside ground. The RF5163 is designed to maintain linearity over a wide range of supply voltage and power output. Ordering Information RF5163 RF5163L RF5163PCBA-41X RF5163PCBA-WD 3V-5V, 2.5GHz Linear Power Amplifier, Matte-Sn (Pb-free) Finish 3V-5V, 2.5GHz Linear Power Amplifier, Sn-Pb Finish Fully Assembled Evaluation Board Fully Assembled Evaluation Board, With Driver Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A12 DS061114 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. VREG2 GND Applications 6 7 1 of 14 RF5163 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity Rating -0.5 to +5.5 -0.5 to 3.3 1000 +15 -10 to +85 -40 to +150 JEDEC Level 3 Unit VDC V mA dBm °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Frequency Range Compliance Output Power Min. Specification Typ. Max. Unit Condition T=25 °C, VCC =5.0V, VREG1,2 =3V, Freq=2450MHz 2400 to 2500 +26 MHz IEEE802.11g and IEEE802.11b dBm With 802.11g modulation (54 Mbit/s) and meeting 802.11g spectral mask @
RF5163PCBA-WD
### 物料型号 - 型号:RF5163 - 制造商:RFMD - 描述:3V-5V, 2.5GHz线性功率放大器

### 器件简介 - RF5163是一款线性、中等功率、高效率的放大器IC,专为低电压操作而设计。该设备采用先进的砷化镓异质结双极晶体管(HBT)工艺制造,设计用于作为802.11b/g/n接入点发射器中的最终射频放大器。该设备在4mmx4mm、16引脚、无引脚芯片载体中提供,背面接地。

### 引脚分配 - 引脚1:RF IN,射频输入。需要匹配网络和DC阻断;详见评估板原理图。 - 引脚2:VREG1 GND,第一阶段偏置电路地。 - 引脚3:P DOWN,电源关闭引脚。应用小于0.6Vpc电压以开启Voc和Voc1电源。 - 引脚4:P DETECT,与外部反馈路径结合使用,提供RF5163的RF功率控制功能。 - 引脚5:VREG1,第一阶段偏置输入。 - 引脚6:VREG2,第二阶段偏置输入。 - 引脚7:VREG2 GND,第二阶段偏置电路地。 - 引脚8:NC,无连接。 - 引脚9-14:GND或VCC1,地连接或电源引脚。 - 引脚15-16:VCC,偏置电路电源引脚。

### 参数特性 - 供电电压:3.0至5.0V - 饱和输出功率:典型+33dBm - 大信号增益:典型20dB - 频率范围:1800MHz至2500MHz - 效率:2.0% EVM @ +26dBm, 54Mbps(典型)

### 功能详解 - RF5163是一款双级设备,名义增益为20dB,工作在2.4GHz至2.5GHz的ISM频段。该设备主要针对固定IEEE802.11g/n WLAN应用,要求RF输出功率为+23dBm至+28dBm,具有极高的线性。

### 应用信息 - 应用领域:802.11b/g/n接入点、PCS通信系统、2.4GHz ISM频段应用、商业和消费系统等。 - 评估板:RF5163PCBA和RF5163PCBA-WD是完全组装的评估板,用于帮助客户实现中等至高功率放大器解决方案。

### 封装信息 - 封装:QFN,16引脚,4x4mm。
RF5163PCBA-WD 价格&库存

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