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RF5198

RF5198

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF5198 - 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF5198 数据手册
RF51983 V 1950 MHz WCDMA Linear Power Amplifier Module RF5198 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 VCCBIAS VCC1/IM Features Input/Output Internally Matched@50 Ω 27.5dBm Linear Output Power 42% Peak Linear Efficiency -41dBc ACLR @ ±5MHz Integrated Power Detector HSDPA Capable RF IN 1 16 15 14 Interstage MN NC 13 12 VCC2 11 VCC2 Q2 GND 2 IMN Q1 VMODE 3 VREG 4 5 VDET Bias OMN Integrated Power Detector IM 10 VCC2 9 RF OUT 8 NC Applications 3 V W-CDMA Band 1 Handsets Multi-Mode W-CDMA 3G Handsets 3 V TD-SCDMA Handsets Spread-Spectrum Systems 6 NC 7 NC Functional Block Diagram Product Description The RF5198 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1920MHz to 1980MHz band (Band 1). The RF5198 has a digital control pin for low power applications to lower quiescent current. This PA also includes a power detector circuit. The RF5198 is assembled in at 16-pin, 3mmx3mm, QFN package. Ordering Information RF5198 RF5198PCBA-41X 3V 1950MHz W-CDMA Linear Power Amplifier Module Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A5 DS060310 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 RF5198 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Moisture Sensitivity Level (IPC/JEDEC J-STD-20) Rating +8.0 +5.2 +3.9 +10 +3.9 -30 to +110 -40 to +150 MSL2@260 Unit V V V dBm V °C °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter High Power Mode (VMODE Low) Operating Frequency Range Linear Gain Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACLR1 @ ±5MHz ACLR2 @ ±10MHz Input VSWR Output VSWR Stability Ruggedness Noise Power Min. Specification Typ. Max. Unit Condition T=25°C Ambient, VCC =3.4V, VCCBIAS =3.4V, VREG =2.8V, VMODE =0V, and POUT =27.5dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. 1920 26.0 27.5 38 352 42 394 -41 -52 2:1 28.5 1980 32.0 -10 47 435 -37 -48 6:1 10:1 -154 -133 -140 -143 -148 -107 MHz dB dBm dBm % mA dBc dBc No oscillation>-70dBc No damage dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz dBm/Hz -50< POUT < +27.5dBm, RX=925MHz to 960MHz (EGSM) -50< POUT < +27.5dBm, RX=1805MHz to 1880MHz (DCS) -50< POUT < +27.5dBm, RX=2110MHz to 2170MHz (W-CDMA), TX/RX Offset=130MHz -50< POUT < +27.5dBm, RX=2110MHz to 2170MHz (W-CDMA), TX/RX Offset=190MHz -50< POUT < +27.5dBm, RX=2400MHz to 2480MHz (Bluetooth) -50< POUT < +27.5dBm, TX=1932.3MHz to 1980MHz, RX=1893.5MHz to 1919.6MHz (PHS) IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc f=2fo, 3fo Reverse IM Products IM 5MHz IM 10MHz -31 -41 dBc dBc 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A5 DS060310 RF5198 Parameter Low Power Mode (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output Linear Efficiency ACLR @ ±5MHz ACLR @ ±10MHz Maximum ICC Input VSWR Output VSWR Stability Ruggedness Reverse IM Products IM 5MHz IM 10MHz -31 -41 3.2 0.6 VCC Bias High Power Idle Current (ICC1 /ICC2 /ICCBIAS) Low Power Idle Current (ICC1 /ICC2 /ICCBIAS) VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage (Power Down) VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage VMODE Voltage 0 2.75 2.7 0 2.0 2.8 1.5 50 45 70 60 2.4 150 1.2 2 0.2 0.5 0.5 2.95 3.0 0.5 3.0 4.3 105 95 5.0 300 3.4 4.3 dBc dBc V V V mA mA mA uA uS uS uA V V V V V High Power Mode Low Power Mode VCCBIAS =3.4V, VREG =2.8V, T=+25°C, RDET =5.1kΩ, ZLOAD =50 Ω 1920 0.3 0.65 2.2 0.70 2.5 0.78 2.8 1980 MHz V V V POUT =0W POUT =+16dBm, VCC1,2 =1.5V, VMODE =2.5V POUT =+27.5dBm, VCC1,2 =3.4V, VMODE =0.2V VMODE =low and VREG =2.8V VMODE =high and VREG =2.8V Low power with DC to DC Converter IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc 105 1920 23 16 18.3 21.0 -41 -54 125 2:1 6:1 10:1 No oscillation>-65dBc No damage 25.3 -37 -48 145 26 1980 31 MHz dB dBm % dBc dBc mA POUT =+16dBm POUT =+16dBm POUT =+16dBm Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCC =1.5V, VCCBIAS =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =16dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. Power Supply Supply Voltage (VCC1 and VCC2) Peak Envelope Power Detector Operating Frequency DC Output Voltage Rev A5 DS060310 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 RF5198 Pin 1 2 3 4 5 Function RF IN GND VMODE VREG VDET Description RF input internally matched to 50 Ω. This input is internally AC-coupled. Ground connection. For nominal operation (High Power mode), VMODE is set LOW. When set HIGH, devices are biased lower to improve efficiency at lower output levels. Regulated voltage supply for amplifier bias circuit. In power down mode, both VREG and VMODE need to be LOW (
RF5198
物料型号: - 型号:RF5198 - 描述:3V 1950MHz W-CDMA线性功率放大器模块

器件简介: - RF5198是一款专为3V手持系统设计的高功率、高效率线性放大器模块。该器件采用先进的第三代GaAs HBT工艺制造,设计用于作为3V W-CDMA手持数字移动通信设备、扩频系统及其他1920MHz至1980MHz频段(Band 1)应用的最终RF放大器。RF5198具有一个数字控制引脚,用于降低低功耗应用中的静态电流,并包含一个功率检测电路。RF5198采用16引脚、3mmx3mm的QFN封装。

引脚分配: - 1号引脚:RF IN,RF输入,内部匹配至50Ω,内部交流耦合。 - 2号引脚:GND,地连接。 - 3号引脚:VMODE,高功率模式时设置为LOW。设置为HIGH时,设备偏置降低,以提高较低输出水平下的效率。 - 4号引脚:VREG,放大器偏置电路的调节电压供应。在功率下降模式下,VREG和VMODE都需要设置为LOW(<0.5V)。 - 5号引脚:VDET,需要一个外部负载电阻(RDET)在此引脚。还需要一个低通滤波器或平均功能,以减少由于调制引起的电压纹波,使其降至可接受的程度。 - 6-8号引脚:NC,无连接,不要将这些引脚连接到任何外部电路。 - 9号引脚:RF OUT,RF输出,内部交流耦合。 - 10-12号引脚:VCC2,输出级集电极供电。请参见原理图以获取所需的外部组件。 - 13号引脚:NC,无连接,不要将此引脚连接到任何外部电路。 - 14号引脚:IM,级间匹配,连接到15号引脚。 - 15号引脚:VCC1/IM,第一阶段集电极供电和级间匹配。 - 16号引脚:VCCBIAS,DC偏置电路的电源输入。 - 封装基底:GND,地连接。封装的背面应焊接到与地平面连接的顶层地垫上,该垫与地平面有多个通孔连接。

参数特性: - 工作频率范围:1920MHz至1980MHz - 最大线性输出功率:27.5dBm - 线性效率:42%峰值 - ACLR@±5MHz:-41dBc - 集成功率检测器 - HSDPA能力

功能详解: - RF5198具有数字控制引脚,用于降低低功耗应用中的静态电流,并包含功率检测电路。该PA还包括一个功率检测电路。

应用信息: - 3V W-CDMA Band 1手机 - 多模式W-CDMA 3G手机 - 3V TD-SCDMA手机 - 扩频系统

封装信息: - 封装风格:QFN,16引脚,3x3mm
RF5198 价格&库存

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