RF5198PCBA-41X

RF5198 0 RoHS Compliant & Pb-Free Product Typical Applications • 3V W-CDMA Band 1 Handsets • Multi-Mode W-CDMA 3G Handsets • 3V TD-SCDMA Handsets • Spread-Spectrum Systems 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Product Description The RF5198 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1920MHz to 1980MHz band (Band 1). The RF5198 has a digital control pin for low power applications to lower quiescent current. This PA also includes a power detector circuit. The RF5198 is assembled in at 16-pin, 3mmx3mm, QFN package. 3.00 Pin 1 ID A 1.45 Pin 1 ID 3.00 1.45 0.28 TYP 0.18 0.05 0.15 C 2 PLCS B 0.15 C 2 PLCS 0.40 TYP 0.20 0.10 M C A B 0.50 TYP 0.203 REF 0.08 C 0.08 C 0.925 0.775 Shaded areas represent pin 1. 0.102 REF Dimensions in mm. C Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT VCCBIAS Package Style: QFN, 16-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT VCC1/IM GaAs MESFET Si CMOS SiGe Bi-CMOS Features • Input/Output Internally Matched@50 Ω • 27.5dBm Linear Output Power • 42% Peak Linear Efficiency • -41dBc ACLR @ ±5MHz 16 RF IN 1 15 14 Interstage MN 13 12 VCC2 NC IM • Integrated Power Detector • HSDPA Capable GND 2 IMN Q1 11 VCC2 Q2 Bias OMN VMODE 3 VREG 4 5 VDET 10 VCC2 Integrated Power Detector Ordering Information RF5198 3V 1950MHz W-CDMA Linear Power Amplifier Module RF5198PCBA-41XFully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 9 RF OUT 8 NC 6 NC 7 NC Functional Block Diagram Rev A5 060310 2-1 RF5198 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Moisture Sensitivity Level (IPC/JEDEC J-STD-20) Rating +8.0 +5.2 +3.9 +10 +3.9 -30 to +110 -40 to +150 MSL2@260 Unit V V V dBm V °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter High Power Mode (VMODE Low) Operating Frequency Range Linear Gain Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACLR1 @ ±5MHz ACLR2 @ ±10MHz Input VSWR Output VSWR Stability Ruggedness Noise Power Specification Min. Typ. Max. Unit Condition T=25°C Ambient, VCC =3.4V, VCCBIAS =3.4V, VREG =2.8V, VMODE =0V, and POUT =27.5dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. 1920 26.0 27.5 38 352 28.5 1980 32.0 -10 47 435 -37 -48 6:1 10:1 42 394 -41 -52 2:1 MHz dB dBm dBm % mA dBc dBc f=2fo, 3fo No oscillation>-70dBc No damage -50< POUT < +27.5dBm, RX=925MHz to 960MHz (EGSM) -50< POUT < +27.5dBm, RX=1805MHz to 1880MHz (DCS) -50< POUT < +27.5dBm, RX=2110MHz to 2170MHz (W-CDMA), TX/RX Offset=130MHz -50< POUT < +27.5dBm, RX=2110MHz to 2170MHz (W-CDMA), TX/RX Offset=190MHz -50< POUT < +27.5dBm, RX=2400MHz to 2480MHz (Bluetooth) -50< POUT < +27.5dBm, TX=1932.3MHz to 1980MHz, RX=1893.5MHz to 1919.6MHz (PHS) IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc -154 -133 -140 dBm/Hz dBm/Hz dBm/Hz -143 dBm/Hz -148 -107 dBm/Hz dBm/Hz Reverse IM Products IM 5MHz IM 10MHz -31 -41 dBc dBc 2-2 Rev A5 060310 RF5198 Parameter Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =1.5V, VCCBIAS =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =16dBm for all parameters (unless otherwise specified). Modulation is 3GPP 3.2 03-00 DPCCH+1DPDCH. 1920 23 16 18.3 26 21.0 -41 -54 125 2:1 1980 31 25.3 -37 -48 145 6:1 10:1 Reverse IM Products IM 5MHz IM 10MHz -31 -41 3.2 0.6 1.5 50 45 3.4 4.3 4.3 105 95 5.0 300 dBc dBc V V V mA mA mA uA uS uS uA V V V V V IF offset fO +5MHz with CW signal=-40dBc IF offset fO +10MHz with CW signal=-40dBc MHz dB dBm % dBc dBc mA POUT =+16dBm POUT =+16dBm Low Power Mode (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output Linear Efficiency ACLR @ ±5MHz ACLR @ ±10MHz Maximum ICC Input VSWR Output VSWR Stability Ruggedness 105 POUT =+16dBm No oscillation>-65dBc No damage Power Supply Supply Voltage (VCC1 and VCC2) VCC Bias High Power Idle Current (ICC1 /ICC2 /ICCBIAS) Low Power Idle Current (ICC1 /ICC2 /ICCBIAS) VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage (Power Down) VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage VMODE Voltage Low power with DC to DC Converter VMODE =low and VREG =2.8V VMODE =high and VREG =2.8V 70 60 2.4 150 1.2 2 0.2 0 2.75 2.7 0 2.0 2.8 0.5 0.5 2.95 3.0 0.5 3.0 Peak Envelope Power Detector Operating Frequency DC Output Voltage 1920 0.65 2.2 0.3 0.70 2.5 1980 0.78 2.8 MHz V V V High Power Mode Low Power Mode VCCBIAS =3.4V, VREG =2.8V, T=+25°C, RDET =5.1kΩ, ZLOAD =50 Ω POUT =0W POUT =+16dBm, VCC1,2 =1.5V, VMODE =2.5V POUT =+27.5dBm, VCC1,2 =3.4V, VMODE =0.2V Rev A5 060310 2-3 RF5198 Pin 1 2 3 4 5 Function RF IN GND VMODE VREG VDET Description RF input internally matched to 50 Ω. This input is internally AC-coupled. Ground connection. For nominal operation (High Power mode), VMODE is set LOW. When set HIGH, devices are biased lower to improve efficiency at lower output levels. Regulated voltage supply for amplifier bias circuit. In power down mode, both VREG and VMODE need to be LOW (