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RF5222

RF5222

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF5222 - 3.0V TO 4.2V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF5222 数据手册
RF5222 3.0V TO 4.2V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm VCC VC1 7 8 Features Single Power Supply 3.0V to 4.2V 26dB Minimum Gain, Input Matched to 50 Ω 2.4GHz to 2.5GHz Frequency Range 11g POUT =+17dBm@3% Typ EVM, 125mA RF IN 1 Input Match Interstage Match 2Fo Filter 6 VC2 VREG 2 Bias Circuit Power Detector 5 RF OUT 3 PDETECT 4 NC Applications IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems Functional Block Diagram Product Description The RF5222 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with a backside ground. The RF5222 is designed to maintain linearity over a wide range of supply voltage and power output. The RF5222 also has built-in power detector and incorporates the input and interstage matching components internally which reduces the component count used externally and makes it easier to incorporate on any design. Ordering Information RF5222 RF5222PCBA-41X 3.0V to 4.2V, 2.4GHz to 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A0 DS070717 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 RF5222 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VREG) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity ESD Human Body Model (HBM) Machince Model (MM) Rating -0.5 to +4.2 -0.5 to +3.2 240 +10 -30 to +85 -40 to +150 JEDEC Level 2 500 125 Unit VDC V mA dBm °C °C V V The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Caution! ESD sensitive device. Parameter Min. Specification Typ. Max. Unit Condition Temperature=+25°C, VCC =3.3V, VREG =3.1V pulsed at 1% to 100% duty cycle, Frequency=2450MHz, circuit per evaluation board schematic, unless otherwise specified IEEE802.11g 2.4 17 3.0 26 31 1.5 0.36 0.9 3.0 3.0 3.3 3.1 -15 0.5 4.2 3.2 10:1 -10 1.8 -43 dB μS dBm 4.0 2.5 GHz dBm % dB ±dB V V VDC VDC Frequency Output Power EVM* Gain Gain Variance Over Temperature Power Detector POUT =8dBm POUT =17dBm Power Supply VREG Input Voltage Output VSWR Input Return Loss Turn-on Time** Second Harmonic IEEE802.11g IEEE802.11n At max data rate, OFDM modulation RMS, mean, VCC =3.3V modified output match RMS, mean At +17dBm RF POUT and 54Mbps -30°C to +85°C, 2.4GHz to 2.5GHz Operating The PA is stable, no spurs above -43dBm Output stable to within 90% of final gain Fundamental frequency is between 2.4GHz and 2.5GHz; RFPOUT =+17dBm Data rate @
RF5222
物料型号: - 型号:RF5222 - 描述:3.0V至4.2V,2.4GHz至2.5GHz线性功率放大器

器件简介: - RF5222是一款线性、中等功率、高效率的两级放大器IC,专为电池供电的WLAN应用设计,如PC卡、迷你PCI和Compact Flash应用。该器件采用先进的InGaP镓砷化物异质结双极晶体管(HBT)工艺制造,设计用于2.5GHz OFDM和其他展宽频谱发射器中的最终RF放大器。RF5222在2.2mm x 2.2mm的8脚QFN封装中提供,背面有接地。

引脚分配: 1. RF IN:RF输入,内部匹配至50欧姆并提供DC阻断。 2. VREG:用于第一和第二放大阶段的偏置电流控制电压。 3. PDETECT或NC:功率检测器,提供与RF输出功率电平成比例的输出电压。 4. NC:该引脚可以不连接或接地。 5. RF OUT:RF输出,可能需要DC阻断电容。 6. VC2:第二级放大器的电压供应。 7. VC1:第一级放大器的电压供应。 8. VCC:偏置参考和控制电路的供电电压。

参数特性: - 单电源供电3.0V至4.2V - 2.4GHz至2.5GHz频率范围 - 11g POUT=+17dBm@3%典型EVM,125mA

功能详解应用信息: - RF5222是双级功率放大器(PA),在2.4GHz至2.5GHz的ISM频段中最小增益为26dB。RF5222集成了输入和中频匹配组件,从而允许最终应用中最少的物料清单(BOM)部件数量。RF5222主要针对IEEE802.11b/g/n WLAN应用设计,在这些应用中可用的供电电压和电流有限。

封装信息: - 封装风格:QFN,8脚,2.2mm x 2.2mm x 0.45mm
RF5222 价格&库存

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