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RF6100-1

RF6100-1

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF6100-1 - 3V 900MHZ LINEAR POWER AMPLIFIER MODULE - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF6100-1 数据手册
RF6100-1 0 RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA/AMPS Cellular Handset • 3V CDMA20001/X Cellular Handset • Spread-Spectrum System 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Product Description The RF6100-1 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spreadspectrum systems, and other applications in the 824MHz to 849MHz band. The RF6100-1 has a digital control line for low power applications to lower quiescent current. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency and linearity. The module is a 4mmx4mm land grid array with backside ground. The RF6100-1 is footprint compatible with industry standard 4mmx4mm CDMA modules, and requires only one decoupling capacitor. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS 1 4.00 ± 0.10 1.40 1.25 4.00 ± 0.10 0.450 ± 0.075 0.500 TYP 0.600 TYP 2.975 R0.20 TYP 1 3.900 TYP 2.425 2.200 1.800 1.525 1.350 0.950 0.500 TYP 0.100 TYP 0.000 3.549 3.500 3.050 2.650 2.400 TYP 2.200 1.800 1.650 1.350 0.950 0.725 0.125 Package Style: Module (4mmx4mm) Features • Input/Output Internally Matched@50 Ω • 28dBm Linear Output Power • 40% Peak Linear Efficiency • -50dBc ACPR @ 885kHz VREG 1 VMODE 2 GND 3 RF IN 4 VCC1 5 Bias 10 GND 9 GND 8 RF OUT 7 GND 6 VCC2 • 29dB Linear Gain • 53% AMPS Efficiency Ordering Information RF6100-1 3V 900MHz Linear Power Amplifier Module RF6100-1PCBA-41X Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA 3.000 TYP 3.200 3.500 TYP 3.900 TYP 0.000 0.775 1.000 TYP Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 050929 2-689 RF6100-1 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Rating +8.0 +5.2 +4.2 +10 +3.5 -30 to +110 -40 to +150 Unit V V V dBm V °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter High Power Mode (VMODE Low) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACPR @ 885kHz ACPR @ 1.98MHz Input VSWR Stability in Band Stability out of Band Noise Power Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). 824 27 849 29 -35 -40 40 465 -50 -58 2:1 MHz dB dBc dBc % mA dBc dBc No oscillation>-70dBc No damage At 45MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =18dBm for all parameters (unless otherwise specified). 28 35 530 -46 -55 6:1 10:1 -133 dBm/Hz Low Power Mode (VMODE High) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Maximum ICC ACPR @885kHz ACPR @1.98MHz Input VSWR Output VSWR Stability 824 24 849 26 -35 -40 135 -50 -60 2:1 MHz dB dBc dBc mA dBc dBc 18 POUT =16dBm -46 -56 6:1 10:1 No oscillation>-70dBc No damage 2-690 Rev A1 050929 RF6100-1 Parameter FM Mode Operating Frequency Range AMPS Maximum Output Power AMPS Efficiency AMPS Gain AMPS Second Harmonics AMPS Third Harmonics 824 47 24 31 53 28 -35 -40 3.4 65 55 4.7 250 849 MHz dBm % dBc dBc V mA mA mA uA uS uS uA V V V V V High Gain Mode Low Gain Mode Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =31dBm for all parameters (unless otherwise specified). -30 -30 4.2 100 70 5.5 1000 6 40 5.0 0.5 2.95 3.0 0.5 2.8 Power Supply Supply Voltage High Gain Idle Current Low Gain Idle Current VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage 3.2 VMODE =low and VREG =2.8V VMODE =high and VREG =2.8V VMODE =high 0.2 0 2.75 2.7 0 2.0 2.8 Rev A1 050929 2-691 RF6100-1 Pin 1 2 3 4 5 6 7 8 9 10 Pkg Base Function VREG VMODE GND RF IN VCC1 VCC2 GND RF OUT GND GND GND Description Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (
RF6100-1
### 物料型号 - 型号:RF6100-1 - 封装:4mm x 4mm land grid array with backside ground

### 器件简介 - RF6100-1是一款专为3V手持系统设计的高功率、高效率线性放大器模块。该设备采用先进的第三代GaAs HBT工艺制造,设计用于作为3V IS-95/CDMA 2000 1X/AMPS手持数字蜂窝设备的最终RF放大器,以及在824MHz至849MHz频段的其他应用,包括扩频系统。

### 引脚分配 | 引脚 | 功能 | 描述 | | --- | --- | --- | | 1 | VREG | 放大器偏置的稳定电压供应。在电源关闭模式下,VREG和VMODE都需要LOW(<0.5V)。 | | 2 | VMODE | 标准操作(高功率模式)时,VMODE设置为LOW。当设置为HIGH时,设备偏置较低以提高效率。 | | 3 | GND | 地连接。连接到封装基底地。为了最佳性能,请保持走线物理短,并立即连接到地平面。 | | 4 | RF IN | RF输入内部匹配到50Ω,此输入内部AC耦合。 | | 5 | VCC1 | 第一阶段收集器供电。可能需要低频去耦电容器(例如4.7μF)。 | | 6 | VCC2 | 输出阶段收集器供电。需要低频去耦电容器(例如4.7μF)。 | | 7 | GND | 地连接。连接到封装基底地。为了最佳性能,请保持走线物理短,并立即连接到地平面。 | | 8 | RF OUT | RF输出内部匹配到50Ω,此输出内部AC耦合。 | | 9 | GND | 地连接。连接到封装基底地。为了最佳性能,请保持走线物理短,并立即连接到地平面。 | | 10 | GND | 地连接。连接到封装基底地。为了最佳性能,请保持走线物理短,并立即连接到地平面。 | | Pkg Base | GND | 地连接。封装背面应焊接到与地平面连接的顶部地垫上,地垫应有短热路径到地平面。 |

### 参数特性 - 输入/输出内部匹配@50Ω - 28dBm线性输出功率 - 40%峰值线性效率 - -50dBc ACPR@885kHz - 29dB线性增益 - 53% AMPS效率

### 功能详解 - RF6100-1具有数字控制线,适用于低功耗应用以降低静态电流。模块自包含50Ω输入和输出,匹配以获得最佳功率、效率和线性度。该模块是一个4mm x 4mm的地格阵列,背面有地。

### 应用信息 - 典型应用包括3V CDMA/AMPS手机、3V CDMA2000 1X/X手机和扩频系统。

### 封装信息 - 封装风格:模块(4mm x 4mm)
RF6100-1 价格&库存

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