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RF6100-1PCBA-41X

RF6100-1PCBA-41X

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF6100-1PCBA-41X - 3V 900MHZ LINEAR POWER AMPLIFIER MODULE - RF Micro Devices

  • 数据手册
  • 价格&库存
RF6100-1PCBA-41X 数据手册
RF6100-13V 900MHz Linear Power Amplifier Module RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module (4 mm x 4 mm) Features Input/Output Internally Matched@50 Ω 28dBm Linear Output Power 40% Peak Linear Efficiency -50dBc ACPR @ 885kHz 29dB Linear Gain 53% AMPS Efficiency VREG 1 VMODE 2 GND 3 RF IN 4 VCC1 5 Bias 10 GND 9 GND 8 RF OUT 7 GND 6 VCC2 Applications 3 V CDMA/AMPS Cellular Handset 3 V CDMA20001/X Cellular Handset Spread-Spectrum System Functional Block Diagram Product Description The RF6100-1 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spreadspectrum systems, and other applications in the 824MHz to 849MHz band. The RF6100-1 has a digital control line for low power applications to lower quiescent current. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency and linearity. The module is a 4mmx4mm land grid array with backside ground. The RF6100-1 is footprint compatible with industry standard 4mmx4mm CDMA modules, and requires only one decoupling capacitor. Ordering Information RF6100-1 3V 900MHz Linear Power Amplifier Module RF6100-1PCBA-41X Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A1 DS050929 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 RF6100-1 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Rating +8.0 +5.2 +4.2 +10 +3.5 -30 to +110 -40 to +150 Unit V V V dBm V °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter High Power Mode (VMODE Low) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACPR @ 885kHz ACPR @ 1.98MHz Input VSWR Stability in Band Stability out of Band Noise Power Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). 824 27 29 -35 -40 28 35 40 465 -50 -58 2:1 849 MHz dB dBc dBc % 530 -46 -55 6:1 10:1 mA dBc dBc No oscillation>-70dBc No damage dBm/Hz At 45MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =18dBm for all parameters (unless otherwise specified). -133 Low Power Mode (VMODE High) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Maximum ICC ACPR @885kHz ACPR @1.98MHz Input VSWR Output VSWR Stability 18 135 -50 -60 2:1 6:1 10:1 -46 -56 mA dBc dBc 824 24 26 -35 -40 849 MHz dB dBc dBc POUT =16dBm No oscillation>-70dBc No damage 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS050929 RF6100-1 Parameter FM Mode Operating Frequency Range AMPS Maximum Output Power AMPS Efficiency AMPS Gain AMPS Second Harmonics AMPS Third Harmonics 47 24 824 31 53 28 -35 -40 3.2 3.4 65 55 4.7 250 -30 -30 4.2 100 70 5.5 1000 6 40 0.2 0 2.75 2.7 0 2.0 2.8 5.0 0.5 2.95 3.0 0.5 2.8 dBc dBc V mA mA mA uA uS uS uA V V V V V High Gain Mode Low Gain Mode VMODE =low and VREG =2.8V VMODE =high and VREG =2.8V VMODE =high 849 MHz dBm % Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =31dBm for all parameters (unless otherwise specified). Power Supply Supply Voltage High Gain Idle Current Low Gain Idle Current VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage Rev A1 DS050929 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 RF6100-1 Pin 1 2 3 4 5 6 7 8 9 10 Pkg Base Function VREG VMODE GND RF IN VCC1 VCC2 GND RF OUT GND GND GND Description Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (
RF6100-1PCBA-41X 价格&库存

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