RF6100-1_1

RF6100-1_1

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF6100-1_1 - 3V 900MHZ LINEAR POWER AMPLIFIER MODULE - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF6100-1_1 数据手册
RF6100-13V 900MHz Linear Power Amplifier Module RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module (4 mm x 4 mm) Features Input/Output Internally Matched@50 Ω 28dBm Linear Output Power 40% Peak Linear Efficiency -50dBc ACPR @ 885kHz 29dB Linear Gain 53% AMPS Efficiency VREG 1 VMODE 2 GND 3 RF IN 4 VCC1 5 Bias 10 GND 9 GND 8 RF OUT 7 GND 6 VCC2 Applications 3 V CDMA/AMPS Cellular Handset 3 V CDMA20001/X Cellular Handset Spread-Spectrum System Functional Block Diagram Product Description The RF6100-1 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spreadspectrum systems, and other applications in the 824MHz to 849MHz band. The RF6100-1 has a digital control line for low power applications to lower quiescent current. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency and linearity. The module is a 4mmx4mm land grid array with backside ground. The RF6100-1 is footprint compatible with industry standard 4mmx4mm CDMA modules, and requires only one decoupling capacitor. Ordering Information RF6100-1 3V 900MHz Linear Power Amplifier Module RF6100-1PCBA-41X Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A1 DS050929 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 RF6100-1 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Rating +8.0 +5.2 +4.2 +10 +3.5 -30 to +110 -40 to +150 Unit V V V dBm V °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter High Power Mode (VMODE Low) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACPR @ 885kHz ACPR @ 1.98MHz Input VSWR Stability in Band Stability out of Band Noise Power Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). 824 27 29 -35 -40 28 35 40 465 -50 -58 2:1 849 MHz dB dBc dBc % 530 -46 -55 6:1 10:1 mA dBc dBc No oscillation>-70dBc No damage dBm/Hz At 45MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =18dBm for all parameters (unless otherwise specified). -133 Low Power Mode (VMODE High) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Maximum ICC ACPR @885kHz ACPR @1.98MHz Input VSWR Output VSWR Stability 18 135 -50 -60 2:1 6:1 10:1 -46 -56 mA dBc dBc 824 24 26 -35 -40 849 MHz dB dBc dBc POUT =16dBm No oscillation>-70dBc No damage 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS050929 RF6100-1 Parameter FM Mode Operating Frequency Range AMPS Maximum Output Power AMPS Efficiency AMPS Gain AMPS Second Harmonics AMPS Third Harmonics 47 24 824 31 53 28 -35 -40 3.2 3.4 65 55 4.7 250 -30 -30 4.2 100 70 5.5 1000 6 40 0.2 0 2.75 2.7 0 2.0 2.8 5.0 0.5 2.95 3.0 0.5 2.8 dBc dBc V mA mA mA uA uS uS uA V V V V V High Gain Mode Low Gain Mode VMODE =low and VREG =2.8V VMODE =high and VREG =2.8V VMODE =high 849 MHz dBm % Min. Specification Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =31dBm for all parameters (unless otherwise specified). Power Supply Supply Voltage High Gain Idle Current Low Gain Idle Current VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage Rev A1 DS050929 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 RF6100-1 Pin 1 2 3 4 5 6 7 8 9 10 Pkg Base Function VREG VMODE GND RF IN VCC1 VCC2 GND RF OUT GND GND GND Description Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (
RF6100-1_1
### 物料型号 - 型号:RF6100-1 - 完整型号:3V 900MHz Linear Power Amplifier Module

### 器件简介 RF6100-1是一款专为3V手持系统设计的高功率、高效率线性放大器模块。该设备采用先进的第三代GaAs HBT工艺制造,设计用于作为3V IS-95/CDMA 2000 1X/AMPS手持数字蜂窝设备的最终RF放大器,以及在824MHz至849MHz频段的其他应用。

### 引脚分配 | 引脚 | 功能 | 描述 | | --- | --- | --- | | 1 | VREG | 放大器偏置的调节电压供应。在功率下降模式下,VREG和VMODE都需要LOW(<0.5V)。 | | 2 | VMODE | 标准操作(高功率模式),VMODE设置为LOW。当设置为HIGH时,设备偏置较低以提高效率。 | | 3 | GND | 地连接。连接到封装基底地。为了最佳性能,保持走线物理短并与地平面立即连接。 | | 4 | RF IN | RF输入内部匹配到50Ω。此输入内部交流耦合。 | | 5 | VCC1 | 第一阶段收集器供应。可能需要低频去耦电容器(例如4.7μF)。 | | 6 | VCC2 | 输出阶段收集器供应。需要低频去耦电容器(例如4.7μF)。 | | 7 | GND | 地连接。连接到封装基底地。为了最佳性能,保持走线物理短并与地平面立即连接。 | | 8 | RF OUT | RF输出内部匹配到50Ω。此输出内部交流耦合。 | | 9 | GND | 地连接。连接到封装基底地。为了最佳性能,保持走线物理短并与地平面立即连接。 | | 10 | GND | 地连接。连接到封装基底地。为了最佳性能,保持走线物理短并与地平面立即连接。 | | Pkg Base | GND | 地连接。封装背面应焊接到与地平面连接的顶部地垫上,地垫应有多条通孔连接到地平面。垫应有短热路径到地平面。 |

### 参数特性 - 工作频率范围:824MHz至849MHz - 线性增益:高功率模式下27至29dB,低功率模式下24至26dB - 最大线性输出功率:高功率模式下28dBm,低功率模式下18dBm - 线性效率:高功率模式下35%至40%,低功率模式下最大为53% - ACPR:高功率模式下-50dBc至-46dBc,低功率模式下-50dBc至-46dBc

### 功能详解 RF6100-1具有数字控制线,适用于降低静态电流的低功率应用。该模块包含50Ω输入和输出,匹配以获得最佳功率、效率和线性。模块是一个4mm x 4mm的接地阵列,背面接地。RF6100-1与行业标准的4mm x 4mm CDMA模块引脚兼容,只需要一个去耦电容器。

### 应用信息 - 应用领域:3V CDMA/AMPS手机、3V CDMA2000 1X/Cellular手机

### 封装信息 - 封装风格:模块(4mm x 4mm) - 封装类型:接地阵列,背面接地
RF6100-1_1 价格&库存

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