RF6100-4

RF6100-4 0 Typical Applications • 3V CDMA US-PCS Handset • 3V CDMA2000/1XRTT US-PCS Handset • 3V CDMA2000/1X-EV-DO US-PCS Handset • Spread-Spectrum System Product Description 1 RoHS Compliant & Pb-Free Product 3V 1900MHZ LINEAR POWER AMPLIFIER MODULE 1.40 1.25 0.800 1.000 TYP 0.000 0.600 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: Module (4mmx4mm) Features • Input/Output Internally Matched@50 Ω • 28.5dBm Linear Output Power • 39% Peak Linear Efficiency • 28dB Linear Gain VCC1 1 RF IN 2 GND 3 VMODE 4 VREG 5 Bias 10 VCC2 9 GND 8 RF OUT 7 GND 6 GND • -48dBc ACPR @ 1.25MHz Ordering Information RF6100-4 3V 1900MHz Linear Power Amplifier Module RF6100-4PCBA-41X Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA 3.000 The RF6100-4 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF6100-4 has a digital control line for low power applications to lower quiescent current. The device is self-contained with 50 Ω input and output that is matched to obtain optimum power, efficiency and linearity. The module is a 4mmx4mm land grid array with backside ground. The RF6100-4 is footprint compatible with industry standard 4mmx4mm CDMA modules, and requires only one decoupling capacitor. 4.00 ± 0.10 Dimensions in mm. 4.00 ± 0.10 Shaded areas represent pin 1 location. 0.100 TYP 0.500 0.550 TYP 0.806 3.200 3.350 3.500 TYP 3.900 TYP 0.450 ± 0.075 1 3.903 TYP 3.453 TYP 3.053 2.653 2.205 TYP 1.805 TYP 1.475 TYP 1.455 0.155 0.103 TYP 0.000 3.850 3.050 2.825 2.600 2.418 2.053 1.953 1.353 0.953 0.553 0.155 Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 050929 2-1 RF6100-4 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Rating +8.0 +5.2 +3.9 +10 +3.5 -30 to +110 -40 to +150 Unit V V V dBm V °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter High Gain Mode (VMODE Low) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Linear Efficiency Maximum ICC ACPR @ 1.25MHz ACPR @ 2.25MHz Input VSWR Output VSWR Stability Noise Power Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28.5dBm for all parameters (unless otherwise specified). 1850 26 28 -35 -40 39 535 -48 -62 2:1 1910 31 -30 28.5 35 600 -46 -56 6:1 10:1 MHz dB dBc dBc dBm % mA dBc dBc No oscillation>-70dBc No damage At 80MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =28.5dBm for all parameters (unless otherwise specified). -139 dBm/Hz Low Gain Mode (VMODE High) Operating Frequency Range Linear Gain Second Harmonics Third Harmonics Maximum Linear Output Linear Efficiency ACPR @1.25MHz ACPR @2.25MHz Maximum ICC Linear Gain Input VSWR Output VSWR Stability 1850 25 27 -35 -40 39 -48 -60 140 26 2:1 1910 31 -30 MHz dB dBc dBc dBm % dBc dBc mA dB 28.5 35 -46 -56 165 POUT =16dBm POUT =16dBm No oscillation>-70dBc No damage 6:1 10:1 2-2 Rev A1 050929 RF6100-4 Parameter Power Supply Supply Voltage High Gain Idle Current Low Gain Idle Current VREG Current VMODE Current RF Turn On/Off Time DC Turn On/Off Time Total Current (Power Down) VREG Low Voltage (Power Down) VREG High Voltage (Recommended) VREG High Voltage (Operational) VMODE Voltage VMODE Voltage 3.2 60 50 3.4 75 65 1.1 250 1.2 2 0.2 2.8 4.2 90 80 2 500 6 40 5 0.5 2.95 3.0 0.5 3.0 V mA mA mA uA uS uS uA V V V V V Specification Min. Typ. Max. Unit Condition T=25°C Ambient VMODE =low and VREG =2.8V VMODE =high and VREG =2.8V VCC =3.4V, VREG =2.8V 0 2.75 2.7 0 2.0 High Gain Mode Low Gain Mode Rev A1 050929 2-3 RF6100-4 Pin 1 2 3 4 5 6 7 8 9 10 Pkg Base Function VCC1 RF IN GND VMODE VREG GND GND RF OUT GND VCC2 GND Description First stage collector supply. A low frequency decoupling capacitor (e.g., 4.7 μF) may be required. RF input internally matched to 50 Ω. This input is internally AC-coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. For nominal operation (High Power Mode), VMODE is set LOW. When set HIGH, devices are biased lower to improve efficiency. Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (