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RF7115SB

RF7115SB

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF7115SB - QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF7115SB 数据手册
RF7115 0 Features • Reduced Solution Size Integrating Antenna Switch and Harmonic Filtering to Decrease Time to Market • Package 7x8x1.2mm • IEC 61000-4-2 Compliant • In/Output Matched to 50 Ω • DC Block on Antenna Port • GSM850/900 POUT =33.5dBm • DCS/PCS POUT =30.5dBm • New Current Limiter RoHS Compliant & Pb-Free Product QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE GSM GaAs Die LB RF IN 2 VSENSE 1 B1 3 B2 4 VBATT 5 B3 6 TX EN 7 VRAMP 8 Fully Integrated Power Control Circuit and Switch Decoder pHEMT Switch 21 ANTENNA 16 RX 4 15 RX 3 14 RX 2 13 RX 1 Applications • GSM850/EGSM900/DCS/ PCS Products • GPRS Class 12 Capable • Power Star© Module • 3V Quad-Band Handsets • Portable Battery-Powered Equipment HB RF IN 9 DCS/PCS GaAs Die Product Description The RF7115 is a high-power, high-efficiency transmit module containing RFMD’s Power Star© integrated power control, integrated pHEMT front end antenna switch and harmonic filtering functionality. All of which combine to provide for best in class harmonic emission control and RX and TX insertion loss. The device is self-contained with 50 Ω input and output terminals with no matching components required. The integrated power control function based on RFMD’s patented Power Star© control is incorporated, eliminating the need for directional couplers, Functional Block Diagram detector diodes, power control ASIC’s, and other power control circuitry; this allows the module to be driven directly from the DAC output. The device is designed for use as the final portion of the transmit chain in GSM850, EGSM900, DCS and PCS GMSK and eliminates the need for PA to antenna switch module matching. On-board power control provides over 70dB control range. The integrated antenna switch allows true quad band TX and RX functionality. Built-in current limiter option may be utilized to minimize power variation in mismatch condition. Ordering Information Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs pHEMT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS RF7115 Quad-Band GSM850/GSM900/DCS/PCS Transmit Module RF7115SB Power Amp Module 5-Piece Sample Pack RF7115PCBA-41X Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A0 060808 11-365 RF7115 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VRAMP) Input RF Power Max Duty Cycle Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.3 to +6.0 -0.3 to +1.8 +10 50 20:1 -20 to +85 -55 to +150 Unit V V dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Power Control VRAMP Power Control “ON” Power Control “OFF” VRAMP Input Capacitance VRAMP Input Current Turn On/Off Time Power Control Range VRAMP POUT BW Specification Min. Typ. Max. Unit Condition 1.5 0.2 15 0.25 20 10 2 50 2.0 2.5 V V pF μA us dB MHz Max. POUT, Voltage supplied to the input Min. POUT, Voltage supplied to the input DC to 2MHz VRAMP =VRAMP MAX VRAMP =0V to VRAMP MAX VRAMP =0.25V to VRAMP MAX Overall Power Supply Power Supply Voltage 3.0 Power Supply Current 1 3.5 5.5 20 V V μA Specifications Nominal operating limits PIN +5dBm TXEnable=Low, PIN =+6dBm, VRAMP =0.25V, B1=B2=Low, B3=High TXEnable=High, PIN =+6dBm, VRAMP =0.25V, B1=B2=Low, B3=High Over all power levels (5dBm to 33dBm) Over all power levels (5dBm to 33dBm) Over all power levels (5dBm to 33dBm) Spurious +5dBm 1805MHz to 1880MHz, RBW=100kHz, POUT > +5dBm TXEnable=Low, PIN =+6dBm, VRAMP =0.25V, B1=High, B2=Low, B3=High TXEnable=High, PIN =+6dBm, VRAMP =0.25V, B1=High, B2=Low, B3=High Over all power levels (5dBm to 33dBm) Over all power levels (5dBm to 33dBm) Over all power levels (5dBm to 33dBm) Spurious 0dBm TXEnable=Low, PIN =+6dBm, VRAMP =0.25V, B1=Low, B2=High, B3=High TXEnable=High, PIN =+6dBm, VRAMP =0.25V, B1=Low, B2=High, B3=High Over all power levels (0dBm to 30dBm) Over all power levels (0dBm to 30dBm) Over all power levels (0dBm to 30dBm) Spurious 0dBm TXEnable=Low, PIN =+6dBm, VRAMP =0.25V, B1=B2=B3=High TXEnable=High, PIN =+6dBm, VRAMP =0.25V, B1=B2=B3=High Over all power levels (0dBm to 30dBm) Over all power levels (0dBm to 30dBm) Over all power levels (0dBm to 30dBm) Spurious
RF7115SB
物料型号:RF7115

器件简介: RF7115是一个高功率、高效率的四频段(GSM850/GSM900/DCS/PCS)发射模块。

它集成了RFMD的Power Star专利技术,提供了功率控制、天线开关和谐波滤波功能。

该模块自成一体,输入输出匹配为50Ω,无需额外匹配元件。

它适用于GSM850、EGSM900、DCS和PCS的GMSK发射链的最终部分。


引脚分配: - Pin 1: VSENSE - Pin 2: GSM850/GSM900的RF输入 - Pin 8: TX ENABLE,用于使能PA模块 - Pin 9: VRAMP,来自DAC的RF电源控制信号 - Pin 21: ANT,天线端口,提供DC阻断和ESD保护

参数特性: - 工作频段:GSM850/900、DCS、PCS - 最大输出功率:GSM850/900为33.5dBm,DCS/PCS为30.5dBm - 功率控制范围:50dB - 电源电压:3.0至5.5V - 输入RF功率:+10 dBm - 最大工作占空比:50%

功能详解: RF7115内置功率控制功能,无需额外的功率控制电路。

它还集成了天线开关,允许真正的四频段发射和接收功能。

此外,还内置了电流限制器选项,以最小化不匹配条件下的功率变化。


应用信息: RF7115适用于GSM850/EGSM900/DCS/PCS产品,GPRS Class 12设备,3V四频段手机和便携式电池供电设备。


封装信息: 封装尺寸为7x8x1.2mm,符合IEC 61000-4-2标准,并且符合RoHS和无铅产品要求。
RF7115SB 价格&库存

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