RF7222
3V W-CDMA BAND 2 LINEAR PA MODULE
Package Style: Module, 10-Pin, 3mmx3mmx1.0mm
Features
VBAT
HSDPA and HSPA+ Compliant
Low Voltage Positive Bias
Supply (3.0V to 4.35V)
+28.5dBm Linear Output
Power (+27.0dBm HSDPA
and HSPA+)
High Efficiency Operation
39% at POUT =+28.5dBm
19% at POUT =+19.0dBm
(Without DC/DC Converter)
Low Quiescent Current in Low
Power Mode: 17mA
Internal Voltage Regulator
Eliminates Need for External
Reference Voltage (VREF)
3-Mode Power States with
Digital Control Interface
Integrated Power Coupler
Integrated Blocking and Collector Decoupling Capacitors
Applications
WCDMA/HSDPA/HSUPA
Wireless Handsets and Data
Cards
Dual-Mode UMTS Wireless
Handsets
RF IN
VMODE1
VMODE0
VEN
1
10 VCC
2
3
Bias Control &
PA/VMODE Enable
4
5
9
RF OUT
8
CPL IN
7
GND
6
CPL OUT
Functional Block Diagram
Product Description
The RF7222 is a high-power, high-efficiency, linear power amplifier
designed for use as the final RF amplifier in 3V, 50 W-CDMA mobile cellular equipment and spread-spectrum systems. This PA is developed for
UMTS Band 2 which operates in the 1850MHz to 1910MHz frequency
band. The RF7222 has two digital control pins, providing the option of one
of three power modes to optimize performance and current drain at lower
power levels. The part also has an integrated directional coupler which
eliminates the need for an external discrete coupler at the output. The
RF7222 is fully HSDPA and HSPA+ compliant and is assembled in a 10pin, 3mmx3mm module.
Ordering Information
RF7222
RF7222PCBA-410
3V W-CDMA Band 2 Linear PA Module
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Prelim DS110228
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF7222
Absolute Maximum Ratings
Parameter
Supply Voltage in Standby Mode
Rating
Unit
6.0
V
Supply Voltage in Idle Mode
6.0
V
Supply Voltage in Operating Mode,
50 Load
6.0
V
Supply Voltage, VBAT
6.0
V
Control Voltage, VMODE0,
VMODE1
3.5
V
Control Voltage, VEN
3.5
V
RF - Input Power
+6
dBm
RF - Output Power
+30
dBm
Output Load VSWR (Ruggedness)
10:1
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Operating Ambient Temperature
-30 to +110
°C
Storage Temperature
-55 to +150
°C
Parameter
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
Min.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Specification
Typ.
Max.
Unit
Condition
Recommended Operating
Conditions
Operating Frequency Range
1850
1910
MHz
VBAT
+3.0
+3.4
+4.35
V
1
+3.4
+4.35
V
VCC
+3.0
VEN
0
1.4
VMODE0, VMODE1
1.8
0
1.5
1.8
0.5
V
PA disabled.
3.0
V
PA enabled.
0.5
V
Logic “low”.
3.0
V
Logic “high”.
POUT
Maximum Linear Output
(HPM)
28.52,3
dBm
High Power Mode (HPM)
Maximum Linear Output
(MPM)
19.02,3
dBm
Medium Power Mode (MPM)
Maximum Linear Output
(LPM)
8.02,3
dBm
Low Power Mode (LPM)
Ambient Temperature
-30
+25
+85
°C
Notes:
1. Minimum VCC for max POUT is indicated.
2. For operation at VCC =+3.2V, derate POUT by 0.6dB. For operation at VCC =3.0V, derate POUT by 1.3dB.
3. POUT is specified for 3GPP (Voice) modulation. For HSDPA and HSPA+ operation, derate POUT by 1.5dB:
HSDPA Configuration: c12, d15, hs24
HSPA+ Configuration: Rel7 Subtest 1
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Prelim DS110228
RF7222
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
T=+25C, VCC =VBAT =+3.4V, VEN =+1.8V, 50 system,
WCDMA Rel 99 Modulation unless otherwise specified.
Electrical Specifications
Gain
25.0
26.5
dB
HPM, POUT =28.5dBm
15
17.5
dB
MPM, POUT 19.0dBm
10.5
Gain Linearity
ACLR - 5MHz Offset
ACLR - 10MHz Offset
PAE Without DC/DC Converter
14.5
dB
LPM, POUT 8.0dBm
±0.2
dB
HPM, 19.0dBmPOUT 28.5dBm
HPM, POUT =28.5dBm
-39
-36
dBc
-42
-36
dBc
MPM, POUT =19.0dBm
-42
-36
dBc
LPM, POUT =8.0dBm
-52
-47
dBc
HPM, POUT =28.5dBm
-58
-47
dBc
MPM, POUT =19.0dBm
-60
-47
dBc
HPM, POUT =28.5dBm
19
%
MPM, POUT =19.0dBm
80
mA
MPM, POUT =16.0dBm
38
mA
LPM, POUT =8.0dBm
mA
LPM, POUT =0.0dBm
39
16
Current Drain
20
Quiescent Current
LPM, POUT =8.0dBm
%
35
85
125
mA
HPM, DC only
20
28
mA
MPM, DC only
LPM, DC only
17
24
mA
Enable Current
0.3
1.0
mA
Source or sink current. VEN =1.8V.
Mode Current (IMODE0, IMODE1)
0.3
1.0
mA
Source or sink current. VMODE0, VMODE1 =1.8V.
Leakage Current
5.0
15.0
A
Noise Power in Receive Band
-137
-134
dBm/Hz
Input Impedance
1.7:1
DC only. VCC =VBAT =4.35V, VEN =VMODE0 =VMODE1 =0.5V.
All power modes, measured at duplex offset frequency
(FTX+80MHz). Rx: 1930MHz to 1990MHz,
POUT 28.5dBm
VSWR
No ext. matching, POUT 28.5dBm, all modes.
Harmonic, 2FO
-27
-15
dBm
POUT 28.5dBm, all power modes.
Harmonic, 3FO
-35
-20
dBm
POUT 28.5dBm, all power modes.
-70
dBc
All spurious, POUT 28.5dBm, all conditions, load
VSWR6:1, all phase angles.
+30
°
Phase shift at 19dBm when switching from HPM to
MPM and MPM to LPM at 8dBm.
DC Enable Time
10
S
DC only. Time from VEN =high to stable idle current (90%
of steady state value).
RF Rise/Fall Time
6
S
POUT 28.5dBm, all modes. 90% of target, DC settled
prior to RF.
Spurious Output Level
Insertion Phase Shift
-30
Coupling Factor
19.5
dB
POUT 28.5dBm, all modes.
Coupling Accuracy - Temp/Voltage
±0.5
dB
POUT 28.5dBm, all modes. -30°CT85°C, 3.0VVCC
& VBAT 4.35V, referenced to 25°C, 3.4V conditions.
Coupling Accuracy - VSWR
±0.7
dB
POUT 28.5dBm, all modes, load VSWR=2:1, ±0.7dB
accuracy corresponds to 12dB directivity. Coupler termination resistance=33.
Prelim DS110228
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF7222
Pin
1
2
Function
VBAT
RF IN
3
4
5
6
7
8
VMODE1
VMODE0
VEN
CPL_OUT
GND
CPL_IN
9
10
Pkg
Base
RF OUT
VCC
GND
Description
Supply voltage for bias circuitry and the first stage amplifier.
RF input internally matched to 50 and DC blocked. Input matching includes a shunt inductor to ground which
would short DC voltage placed on this pin.
Digital control input for power mode selection (see Operating Modes truth table).
Digital control input for power mode selection (see Operating Modes truth table).
Digital control input for PA enable and disable (see Operating Modes truth table).
Coupler output.
This pin must be grounded.
Coupler input used for cascading couplers in series. Terminate this pin with a 50 resistor if not connected to
another coupler.
RF output internally matched to 50and DC blocked.
Supply voltage for first and second stage amplifier.
Ground connection. The package backside should be soldered to a topside ground pad connecting to the PCB
ground plane with multiple ground vias. The pad should have a low thermal resistance and low electrical impedance to the ground plane.
VEN
VMODE0
VMODE1
VBAT
VCC
Low
Low
Low
3.0V to 4.35V
3.0V to 4.35V
Conditions/Comments
Low
X
X
3.0V to 4.35V
3.0V to 4.35V
Standby Mode
High
Low
Low
3.0V to 4.35V
3.0V to 4.35V
High power mode
High
High
Low
3.0V to 4.35V
3.0V to 4.35V
Medium power mode
High
High
High
3.0V to 4.35V
3.0V to 4.35V
Low power mode
Power down mode
Package Drawing
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Prelim DS110228
RF7222
Preliminary Application Schematic
VBAT
VCC
1
C5
4.7uF
C72
10nF
J1
RF IN
2
9
VMODE0
C102
10nF
4
VEN
C112
10nF
5
C82
10nF
J2
RF OUT
C6
4.7uF
C4
22uF
8
3
VMODE1
C92
10nF
10
Bias Control &
PA/VMODE Enable
R23
50
7
6
J3
CPL OUT
Notes:
1. Place these capacitors as close to PA as possible.
2. 50 resistor will be removed if pin 8 is connected to another coupler. Coupler Directivity can be improved with R2 = 33
Prelim DS110228
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF7222
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch
to 8inch gold over 180inch nickel.
PCB Land Pattern Recommendation
PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown
has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate
lead and package tolerances. Since surface mount processes vary from company to company, careful process development is
recommended.
PCB Metal Land Pattern (Top View)
Note: Shaded area represents Pin
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Prelim DS110228
RF7222
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The
center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be
provided in the master data or requested from the PCB fabrication supplier.
PCB Solder Mask Pattern (Top View)
Note: Shaded area represents Pin 1 location.
Thermal Pad and Via Design
The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device.
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been
designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing
strategies.
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a
0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the
quantity of vias be increased by a 4:1 ratio to achieve similar results.
Prelim DS110228
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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