RFCM2680

RFCM2680 RFCM2680 45MHz to 1003MHz GaAs/GaN Power Doubler MODULE 45MHz TO 1003MHz GaAs/GaN POWER DOUBLER MODULE Package: 9-pin, 9.0mm x 8.0mm x 1.375mm Current Setting V+ Features   Excellent Linearity Superior Return Loss Performance INPUT  Extremely Low Distortion  Optimal Reliability  Low Noise  RFCM2680 Unconditionally Stable Under all Terminations  Extremely High Output Capability  22.5dB Min. Gain at 1003MHz  450mA Max. at 24VDC Functional Block Diagram Product Description Applications  OUTPUT 45MHz to 1003MHz CATV Amplifier Systems The RFCM2680 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. Ordering Information RFCM2680SB RFCM2680SR RFCM2680TR7 RFCM2680TR13 RFCM2680PCBA-410 Sample bag with 5 pieces 7” Reel with 100 pieces 7” Reel with 500 pieces 13” Reel with 1000 pieces Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT GaN HEMT Si CMOS Si BJT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120518 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 6 RFCM2680 Absolute Maximum Ratings Parameter RF Input Voltage (single tone; on evaluation board) DC Supply Over-Voltage (5 minutes) Rating Unit 60 dBmV 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C l Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. Parameter Min. Specification Typ. Max. Unit V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω; IDC = IDC Typical Overall Power Gain Slope[1] 21.0 21.5 22.0 dB f = 45MHz 22.5 23.0 24.0 dB f = 1003MHz 1.0 1.5 2.5 dB f = 45MHz to 1003MHz 1 dB f = 45MHz to 1003MHz (Peak to Valley) 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 16 dB f = 870MHz to 1003MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 17 dB f = 870MHz to 1003MHz dB f = 50MHz to 1003MHz Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure 3.0 Output P1dB 32 Output IP3 49 Total Current Consumption (DC) 430.0 4.0 dBm dBm 450.0 6MHz tone spacing at 16dBm/tone mA Distortion data 40MHz to 550MHz V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω; IDC = IDC typical CTB -73 -69 dBc XMOD -66 -61 dBc -75 -65 dBc CSO CIN Condition 55 58 VO = 60dBmV at 1003MHz, 18dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[2][4] dB Distortion data 40MHz to 550MHz V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω; IDC = 370mA CTB -73 dBc XMOD -67 dBc CSO -76 dBc CIN 59 dB VO = 57dBmV at 1003MHz, 18dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[3][4] [1] The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. [2] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +42dBmV to +51.4dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. [3] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +39dBmV to +48.4dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. [4] Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120518 RFCM2680 Current Adjustment Using Resistor R3 The RFCM2680 can be operated over a wide range of current to provide optimal required performance with minimum current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current between 430mA and 330mA (typ.). Recommended current consumption is between 370mA to 430mA. Within this range, gain change less than 0.2dB and the noise figure changes less than 0.1dB. RFCM2680CurrentversusResistorR3 I[mA] 440 420 Device Current [mA], typical R3 [] 430 410 390 370 350 330 1500 1400 1300 1200 1100 1000 V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω 400 380 360 340 320 1000 1100 1200 1300 1400 R3[] 1500 Change of Distortion Performance Over Current WorstCaseDistortionDegradation overDeviceCurrent,typicalvalues I[mA] 440 420 400 CTB 380 CIN 360 340 320 0 1 2 3 4 5 6 7 8 9 10 11 CTBandCINdegradation[dB] Test conditions: V+= 24V; TMB = 30°C; ZS = ZL = 75; VO = 60dBmV at 1003MHz, 18dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset) DS120518 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 3 of 6 RFCM2680 Application Circuit FB1 Bead 60 V+ C1 220pF R1 10k D1 TGL34-33A R2 3.9k D2 MM3Z5V6T1 GND R3 1.5k C3 4.7nF T1 RFXF0006 C2 4.7nF R4 10 C4 1.2pF R5 470 RF IN C6 4.7nF C9 DNI R7 DNI R8 DNI 9 1 C10 0.5pF R6 470 8 2 3 U1 RFCM2680 T2 RFXF0008 C13 DNI T3 RFXF0009 C7 4.7nF RF OUT 7 C11 0.5pF 6 4 5 C5 1.2pF C14 DNI C8 4.7nF R10 DNI C12 DNI R11 DNI R12 DNI R9 DNI Evaluation Board Layout Note: The ground plane of the RFCM2680 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power (up to 10.4W). In any case the module backside temperature should not exceed 100°C. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. DS120518 RFCM2680 Component Chart Component Type Value Evaluation Board RFCM2680PCBA-410 Capacitor 220 pF Capacitor 4.7 nF Capacitor 1.2 pF Capacitor DNI Capacitor 0.5pF Resistor 10k Resistor 3.9k Resistor 1.5k Resistor 10 Resistor 470 Resistor DNI Impedance Bead 60 at 100MHz Transient Voltage Suppressor Diode TGL34-33A Zener Diode MM3Z5V6T1G Transformer RFXF0006 Transformer RFXF0008 Transformer RFXF0009 DUT RFCM2680 Quantity Designator 1 1 5 2 4 2 1 1 1 1 2 6 1 1 1 1 1 1 1 C1 C2, C3, C6, C7, C8 C4, C5 C9, C12, C13, C14 C10, C11 R1 R2 R3 R4 R5, R6 R7-R12 FB1 D1 D2 T1 T2 T3 U1 Comment optional to improve matching in application optional to improve matching in application Pin Configuration RF IN + 1 GND 2 GND GND RF IN - 9 RF OUT + 8 GND 7 V+ 6 GND 5 RF OUT - 3 4 Pin Names and Description Pin 1 2, 3, 6, 8 4 5 7 9 DS120518 Name RF IN+ GND RF INRF OUTV+ RF OUT+ Description RF AMP Positive Input Ground pins RF AMP Negative Input RF AMP Negative Output Supply Voltage, +24V RF AMP Positive Output 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 5 of 6 RFCM2680 Package Drawing Dimensions in millimeters 9.000±0.100 3.700 PIN 1 Indicator RFCM2680 YYWW Trace Code DATA CODE (YEAR/WEEK) 8.000±0.100 A 1.000 A A A A 0.650 0.000 0.650 A 2x 2.000 A 1.000 A A Pin1 2x 2.000 0.275 Ref molding cap 6 of 6 3.400 4x 4.100 0.000 A= 0.600 x 0.600 mm 1.375±0.075 5x 4.100 3.400 3.700 substrate 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 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