RFHA1020SQ

RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse Conditions   RF IN VG Pin 1 (CUT) 10% to 20% Duty Cycle 100s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances 50V Operation Typical Performance:      Output Pulsed Power: 280W Pulse Width: 100s, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature Functional Block Diagram Product Description The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Applications    Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers Ordering Information RFHA1020S2 RFHA1020SB RFHA1020SQ RFHA1020SR RFHA1020TR13 RFHA1020PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 50 Pieces on 7” short reel 250 Pieces on 13” reel Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V operation Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 10 RFHA1020 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 155 mA Operational Voltage 55 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C Operating Junction Temperature (TJ) 250 °C Human Body Model Class 1A MTTF (TJ < 200°C) MTTF (TJ < 250°C) 3.0E + 06 1.4E + 05 Hours TC = 85°C, DC bias only 0.90 °C/W TC = 85°C, 100s pulse, 10% duty cycle 0.18 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and