RFHA1027

RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1027 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat-sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Package: Flanged Ceramic, 2 pin Features ■ Wideband Operation: 1.2GHz to1.4GHz ■ Advanced GaN HEMT Technology ■ Advanced Heat-Sink Technology ■ Optimized Evaluation Board Layout for 50Ω Operation ■ Integrated Matching Components for High Terminal Impedances ■ 50V Operation Typical Performance      Output Pulsed Power 500W Pulse Width 1ms, Duty Cycle 10% Small Signal Gain 16dB High Efficiency 55% -40°C to 85°C Operation Temperature Applications Functional Block Diagram Ordering Information RFHA1027S2 Sample bag with 2 pieces RFHA1027SB Bag with 5 pieces RFHA1027SQ Bag with 25 pieces RFHA1027SR 7” short reel with 50 pieces RFHA1027TR13 13” reel with 250 pieces RFHA1027PCBA-410 Fully Assembled Evaluation Board Optimized for 1.2GHz to1.4GHz; 50V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® ■ Radar ■ Air Traffic Control and Surveillance ■ General Purpose Broadband Amplifiers DS140204 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 10 RFHA1027 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to 2 V Operating Voltage 65 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 Hours MTTF (TJ < 250°C, 95% Confidence Limits)* 1.1E + 05 Hours Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Thermal Resistance, RTH (Junction to Case) TC = 85°C, DC Bias Only 0.90 TC = 85°C, 100μs Pulse, 10% Duty Cycle TC = 85°C, 1ms Pulse, 10% Duty Cycle 0.13 0.25 °C/W * MTTF – median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: P DISS < (TJ – TC) / RTH J-C and TC = TCASE Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) 50 -8 Drain Bias Current Frequency of Operation -3.3 V -2 750 1200 V mA 1400 MHz IG(OFF) – Gate Leakage 3 mA VG = -8V, VD = 0V ID(OFF) – Drain Leakage 15 mA VG = -8V, VD = 50V DC Functional Test VGS(TH) – Threshold Voltage -3.5 V VD = 50V, ID = 40mA VDS(ON) – Drain Voltage at high current 0.43 V VG = 0V, ID = 1.5A RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 10 RFHA1027 Specification Parameter Unit Min Typ Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA, T = 25ºC, Performance in a standard tuned test fixture. RF Functional Test Power Gain Condition Max 12.5 13.6 Input Return Loss dB -5 dB f = 1200MHz, PIN = 44dBm Output Power 56.5 Drain Efficiency Power Gain 12.5 57.6 dBm 53 % 13.3 dB Input Return Loss -5 dB f = 1300MHz, PIN = 44dBm Output Power 56.5 Drain Efficiency Power Gain 12.5 57.3 dBm 55 % 12.8 dB Input Return Loss -5 dB f = 1400MHz, PIN = 44dBm Output Power 56.5 Drain Efficiency 56.8 dBm 54 % RF Typical Performance Frequency Range 1200 1400 MHz Low Power Gain 15.8 dB POUT = 36dBm [1,2] Power Gain 13.3 dB PIN = 44dBm [1,2] Gain Variation with Temperature -0.019 dB/°C 57 dBm 500 W 54 % Output Power (PSAT) Drain Efficiency At peak output power [1,2] Peak output power [1,2] At peak output power [1,2] [1] Test Conditions: PW = 1ms, DC = 10%, VDSQ = 50V, IDQ = 750mA, T = 25ºC. [2] Performance in a standard tuned test fixture. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 10 RFHA1027 Typical Performance in Standard Fixed Tuned Test Fixture: T = 25°C unless noted RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 10 RFHA1027 Typical Performance in Standard Fixed Tuned Test Fixture: T = 25°C unless noted (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 10 RFHA1027 Evaluation Board Schematic VDRAIN VGATE C16 C15 + + R3 C13 + C14 L5 L6 L3 L4 C1 R2 C12 C9 C6 R1 C11 C7 C10 C8 L2 L1 50  strip J1 RF IN RFHA1027 C5 C2 J2 RF OUT 50  strip C4 Evaluation Board Bill of Materials (BOM) Component Value Manufacturer Part Number C1 680uF Panasonic EEU-FC2A681 C11 0.1uF Murata GRM32NR72A104KA01L C13 0.1uF Panasonic ECJ-2YB1H104K C14,C16 10uF Panasonic ECA-2AM100 C2 2.7pF ATC ATC800A2R7BT C4, C6, C9, C10 100pF ATC ATC800A101JT C5 150pF ATC ATC800B151JT300X C7, C12 10000pF Panasonic ECJ-2VB2A103K C8 0.1uF Panasonic ECJ-2VB2A104K L1 68nH Coilcraft 1812SMS-68NJLB L2 82nH Coilcraft 1812SMS-82NJLB L3, L4 75 ohm, 10A Steward 35F0121-1SR-10 L5, L6 115 ohm, 10A Steward 28F0181-1SR-10 R1, R3 10 ohms Panasonic ERJ-8GEYJ100V R2 51 ohms Panasonic ERJ-8GEYJ510 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 10 RFHA1027 Package Drawing (Dimensions in millimeters) Pin Names and Descriptions Pin Name Description 1 GATE VG RF Input 2 DRAIN VD RF Output 3 SOURCE Ground Base RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 10 RFHA1027 Bias Instruction for RFHA1027 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -8V to VG. 4. Apply 50V to VD. 5. Increase VG until drain current reaches 750mA or desired bias point. 6. Turn on the RF input. IMPORTANT NOTE: Depletion mode device - when biasing the device VG must be applied BEFORE VD. When removing bias VD must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail. Note: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the chassis and input and output leads soldered to the circuit board. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 10 RFHA1027 Evaluation Board Layout Device Impedances Frequency (MHz) Z Source (Ω) 1200 38.1 + j4.5 18 – j1.0 1300 37.6 + j4.6 16 + j0.5 1400 36.7 + j4.5 17 + j1.6 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. Z Load (Ω) DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 10 RFHA1027 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (V GS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts V GS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS140204 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 10