RFHA3944

RFHA3944 65W GaN Wide-Band Power Amplifier The RFHA3944 is a 48V, 65W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second generation advanced high power density gallium nitride (GaN) semiconductor process with improved linearity, these highperformance amplifiers achieve high efficiency, excellent linearity, and flat gain and power over a broad frequency range in a single amplifier design. The RFHA3944 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. RFHA3944 Package: Flanged Ceramic, 2 pin, RF360-2 Features ■ Broadband Operation   ■ Advanced GaN HEMT Technology ■ Peak Modulated Power > 65W ■ Advanced Heat-Sink Technology ■ 48V Typical Modulated Performance     ■ ■ Ordering Information POUT 42.4dBm Gain 14.7dB Drain Efficiency 31% ACP-42dBc 48V Typical CW Performance    Functional Block Diagram Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz POUT 48.1dBm Gain 14.5dB Drain Efficiency 55% -40°C to 85°C Operating Temperature Applications ■ Military Communications ■ General Purpose Broadband Amplifiers RFHA3944S2 Sample bag with 2 pieces RFHA3944SB Bag with 5 pieces ■ Electronic Warfare RFHA3944SQ Bag with 25 pieces ■ Public Mobile Radios RFHA3944SR Short reel with 50 pieces 13” Reel with 400 pieces ■ Commercial Wireless Infrastructure RFHA3944TR13 ■ Cellular and WiMAX Infrastructure RFHA3944PCBA-411 Fully assembled evaluation board optimized for 2.14GHz; 48V ■ Industrial, Scientific, and Medical RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS131024 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 11 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 30 mA 50 V Operational Voltage Ruggedness (VSWR) Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. 10:1 Storage Temperature Range -65 to +125 °C Operating Temperature Range (TL) -40 to +85 °C 250 °C Operating Junction Temperature (TJ) Human Body Model Class 1B MTTF (TJ < 200°C, 95% Confidence Limits)* 3.2E + 06 Hours MTTF (TJ < 250°C, 95% Confidence Limits)* 5.3E + 04 Hours 1.7 °C/W Thermal Resistance, Rth (junction to case) measured at TC = 85°C, DC bias only Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. * MTTF – median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max Recommended Operating Conditions Drain Voltage (VDSQ) 28 Gate Voltage (VGSQ) -1.5 Drain Bias Current (IDSQ) Frequency of Operation -0.9 48 V -0.4 V 540 DC mA 4000 GHz IG(OFF) – Gate Leakage 0.02 mA VG = -8V, VD = 0V ID(OFF) – Drain Leakage 0.2 mA VG = -8V, VD = 48V DC Function Test VGS(TH) – Threshold Voltage -1.4 V VD = 48V, ID = 20mA VDS(ON) – Drain Voltage at High Current 0.75 V VG = 0V, ID = 1.5A RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS131024 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 2 of 11 RFHA3944 Specification Parameter Unit Min Typ Condition Max Capacitance CRSS 3.5 pF CISS 29 pF COSS 21 pF Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a standard tuned test fixture RF Functional Test VGSQ -1.3 -0.9 Gain 13.5 14.5 dB Drain Efficiency 27.5 31 % Input Return Loss Output PAR (CCDF at 0.01%) -11 5.0 6.0 -0.6 -7 V dB VDSQ = 48V, IDSQ = 540mA IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 42.4dBm, f = 2140MHz dB Test Conditions: VDSQ = 48V, IDSQ = 540mA, T = 25°C, WCDMA ACP measured at ±5.0MHz at 3.84MHz BW, Performance in a standard tuned test fixture RF Typical Performance Gain 15.0 dB Drain Efficiency 28.0 % Input Return Loss -12 dB Adjacent Channel Power -42 dBc Gain 14.5 dB Output Power 48.1 dBm 55 % Drain Efficiency VG = -8V, VD = 0V WCDMA (3GPP TM1, 7.5dB PAR at 0.01% CCDF), POUT = 41.8dBm, f = 2140MHz CW, f = 2140MHz RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 11 RFHA3944 Typical Performance in Standard Fixed Tuned Test Fixture Optimized for Linearity (T = 25°C unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 11 RFHA3944 Typical Performance in Standard Fixed Tuned Test Fixture Optimized for Linearity (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 11 RFHA3944 Typical Performance in Standard Fixed Tuned Test Fixture Optimized for Linearity (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 11 RFHA3944 Evaluation Board Schematic Evaluation Board Bill of Materials (BOM) Value Manufacturer Manufacturer’s P/N C1, C2, C10, C11 33pF ATC ATC800A330JT C3, C14 0.1uF Murata GRM32NR72A104KA01L C4, C13 4.7uF Murata GRM55ER72A475KA01L C15 1.8pF ATC ATC800A1R8BT C6 2.0pF ATC ATC800A2R0BT C7 0.3pF ATC ATC800A0R3BT C8 1.5pF ATC ATC800A1R5BT C9 2.4pF ATC ATC800A2R4BT C12 330uF Panasonic EEU-FC2A331 C5 100uF Panasonic ECE-V1HA101UP R1 10Ω Panasonic ERJ-8GEYJ100V Item RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 11 RFHA3944 Package Drawing Pin Names and Descriptions Pin Name Description 1 GATE VGQ RF Input 2 DRAIN VDQ RF Output 3 SOURCE Ground Base RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 11 RFHA3944 Bias Instruction for RFHA3944 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 48V to VD. 5. Increase VG until drain current reaches 540mA or desired bias point. 6. Turn on the RF input. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 11 RFHA3944 2.14GHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source (Ω) Z Load (Ω) 2110 1.94 - j0.7 5.7 + j0.8 2140 2.13 - j0.2 5.9 + j1.3 2170 2.3 + j0.4 6 + j2 NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 11 RFHA3944 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (V GS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts V GS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131024 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 11