RFHA3960

PRELIMINARY RFHA3960 28V/48V 3Watts/6.3Watts GaN RF Power Amplifier The RFHA3960 is a 28V, 3W and 48V, 6.3W High Power discrete Amplifier designed for commercial Wireless Infrastructure, Cellular and WiMAX Infrastructure, Industrial/Scientific/Medical and General Purpose broadband Amplifier application. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, linearity and flat gain over a broad frequency range in a single amplifier design. The RFHA3960 is an unmatched GaN transistor packaged in a plastic over-molded SOIC, 8 pin package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. VGS RFHA3960 Package: Plastic Over Molded, 8pin, SOIC8 Features ■ Broadband Operation DC to 6GHz ■ Advanced GaN HEMT Technology ■ Advanced Heat-Sink Technology ■ 28V Operation Typical P3dB Performance at 2.5GHz    VDS RF OUT Pin 6,7 RF IN Pin 2,3 ■ 48V Operation Typical P3dB Performance at 2.5GHz    GND BASE ■ Output Power 3W at 2.5GHz Drain Efficiency 57% Small Signal Gain = 16dB Output Power 6.3W at 2.5GHz Drain Efficiency 50% Small Signal Gain = 15.5dB -40°C to 85°C Operating Temperature Functional Block Diagram Ordering Information Applications RFHA3960S2 Sample bag with 2 pieces ■ Commercial Wireless Infrastructure RFHA3960SB Bag with 5 pieces ■ Cellular and WiMAX.Infrastructure RFHA3960SQ Bag with 25 pieces ■ Civilian and Military Radar RFHA3960SR Short reel with 100 pieces ■ RFHA3960TR7 7” reel with 500 pieces General Purpose Broadband Amplifier RFHA3960TR13 13” reel with 2500 pieces ■ Public Mobile Radio RFHA3960PCBA-410 Fully assembled evaluation board 2400 to 2600MHz, 28V and 48V operation ■ Industrial, Scientific and Medical RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS131206 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 12 RFHA3960 PRELIMINARY Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V 50 V Operational Voltage Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 MTTF (TJ < 250°C, 95% Confidence Limits)* 1.4E + 05 Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only TBD Hours Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and