RFPA0133
3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3 mm x 3 mm
Features
0.5 W CW Output Power at 3.6 V 1 W CW Output Power at 5 V 32 dB Small Signal Gain at 900 MHz >60% Efficiency @ PSAT Digitally Controlled Output Power 380 MHz to 960 MHz Frequency Range High Isolation Analog Communication Systems 900 MHz Spread Spectrum Systems 400 MHz Industrial Radios Driver Stage for Higher Power Applications 3 V to 5 V Applications High Isolation Buffer
Applications
Functional Block Diagram
Product Description
The RFPA0133 is a 3 V to 5 V high efficiency programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device has been designed to offer saturated efficiency greater than 60% over a range of frequencies from 380 MHz to 960 MHz.
Ordering Information
RFPA0133SQ RFPA0133SR RFPA0133TR7 RFPA0133TR13 RFPA0133PCK-410 RFPA0133PCK-411 Sample Bag with 25 Pieces 7” Reel with 100 Pieces 7” Reel with 750 Pieces 13” Reel with 2500 Pieces 860 MHz to 930 MHz PCBA with 5-piece Sample Bag 430 MHz to 470 MHz PCBA with 5-piece Sample Bag
Optimum Technology Matching® Applied
SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS
GaAs HBT GaAs MESFET InGaP HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100902
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RFPA0133
Absolute Maximum Ratings Parameter
Supply Voltage Power Down Voltage (VPD) VBIAS DC Supply Current Input RF Power Output Load VSWR (See Note) Ambient Operating Temperature Storage Temperature
Rating
-0.5 to +5.25 -0.5 to +3.3 -0.5 to +3.3 500 +10 6:1 -40 to +85 -40 to +150
Unit
VDC V V mA dBm °C °C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EU Directive 2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Note: Due to high efficiency of this PA, the maximum ICC should always be less than 400 mA. Only under short term poor VSWR conditions is 500 mA acceptable.
Parameter
Overall
CW Output Power CW Output Power Small Signal Gain Second Harmonic Third Harmonic CW Efficiency Power Down “ON” Power Down “OFF” VPD Input Current G16, G8 “ON” G16, G8 “OFF” G16, G8 Input Current Output Power
Min.
Specification Typ.
Max.
Unit
Condition
T = 25 °C, VCC = 3.6 V, VPD = VBIAS = 3.0 V, PIN = 0 dBm, Freq = 915 MHz
27.5 30 32 23 45 55 0 1.7 0 1.0 26.5 21 14 3 27.5 23 16 5 200 3.6 230 150 65 35 29 25 18 8 63 3.0 0.5 6 3.0 0.7 0.8
dBm dBm dB dBc dBc % V V mA V V mA dBm dBm dBm dBm ns V mA mA mA mA 110 200 mA nA
VCC = 3.6 V VCC = 5 V PIN = -10 dBm Without external second harmonic trap G16 = “high”, G8 = “high”, PIN = 0 dBm Voltage supplied to the input Voltage supplied to the input Only in “ON” state Voltage supplied to the input Voltage supplied to the input Only in “ON” state G16 = “high”, G8 = “high”, PIN = 0 dBm G16 = “high”, G8 = “low”, PIN = 0 dBm G16 = “low”, G8 = “high”, PIN = 0 dBm G16 = “low”, G8 = “low”, PIN = 0 dBm
Turn On/Off Time
Power Supply
Power Supply Voltage Power Supply Current Specifications G16 = “high”, G8 = “high”, PIN = 0 dBm G16 = “high”, G8 = “low”, PIN = 0 dBm G16 = “low”, G8 = “high”, PIN = 0 dBm G16 = “low”, G8 = “low”, PIN = 0 dBm G16 = “high”, G8 = “high”, No RF In G16 = “low”, G8 = “low”, PD = “low”. No RF IN.
Idle Current
40
75 60
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100803
RFPA0133
DS100803
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RFPA0133
Pin 1,4,5, 7,8, 11, 15 2 3 6 Function NC Description
These pins may be left unconnected or soldered to ground.
GND RF IN VPD
Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Amplifier RF input. The amplifier does not contain internal DC blocking and, therefore, should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. Power down control voltage. When this pin is at 0 V, the device will be in power down mode, dissipating minimum DC power. When this pin is at 3 V the device will be in full power mode delivering maximum gain and output power capability. This pin should not, in any circumstance, be higher than 3.3 V. This pin should also have an external UHF and HF bypassing capacitor. Typically VBIAS = VPD = 3.0 V. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. Bias for the final power amplifier output transistor must also be provided through one of these pins. Pins 9 and 10 should be used for the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. RF output power gain control 8 dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3 V and a logic high should be at least 1.7 V. This pin should also have an external UHF bypassing capacitor. See note. RF output power gain control 16 dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3 V and a logic high should be at least 1.7 V. This pin should also have an external UHF bypassing capacitor. See note. Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output. Positive supply for the bias circuits. This pin should be bypassed with a single UHF capacitor, placed as close as possible to the package. Typically, VBIAS = VPD = 3.0 V.
9,10
RF OUT/VCC2 G8 G16 VCC1 VBIAS
12 13 14 16
Note: The 8 dB and 16 dB gain steps are approximate for small signal operation. As the device compresses, the values of the gain steps compress as well. The output power table on page two shows the effect of the gain steps for saturated (0 dBm input) operation.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100803
RFPA0133
Evaluation Board Schematic 860 MHz to 930 MHz
DS100803
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RFPA0133
Evaluation Board Schematic 430 MHz to 470 MHz
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100803
RFPA0133
Evaluation Board Layout
DS100803
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RFPA0133
Package Drawing
Branding Diagram
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100803