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RFPA3800TR7

RFPA3800TR7

  • 厂商:

    RFMD(威讯)

  • 封装:

    SOIC-8

  • 描述:

    IC RF AMP GP 150MHZ-960MHZ 8SOIC

  • 详情介绍
  • 数据手册
  • 价格&库存
RFPA3800TR7 数据手册
RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier RFPA3800 GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features       5W Output Power (P1dB) High Linearity: OIP3>48dBm High Efficiency Low Noise: NF=4dB at 945MHz 5V to 7V Operation Thermally Enhanced Slug Package Applications  GaAs Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure Final Stage PA in Femptocell and Repeater Applications Final Stage PA in High Efficiency, High Power Applications Class AB Operation for LTE and GSM Transceiver Applications  Functional Block Diagram  Product Description The RFPA3800 is a single-stage GaAs HBT power amplifier specifically designed for high power, high efficiency applications. It is also well-suited for Wireless Infrastructure linear power amplifier applications. The RFPA3800 can be optimized for linear or saturated operation by varying the quiescent bias point and load line. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA3800 exhibits excellent thermal performance through the use of a thermally-enhanced plastic surface-mount slug package.   Ordering Information RFPA3800SQ RFPA3800SR RFPA3800TR7 RFPA3800TR13 RFPA3800PCK-410 RFPA3800PCK-411 Sample bag with 25 pieces 7” Reel with 100 pieces 7” Reel with 750 pieces 13” Reel with 2500 pieces 450MHz to 470MHz PCBA with 5-piece Sample Bag 920MHz to 960MHz PCBA with 5-piece Sample Bag  Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS GaAs HBT GaAs MESFET InGaP HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110505 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 RFPA3800 Absolute Maximum Ratings Parameter Supply Voltage (VCC and VBIAS) >300MHz Supply Voltage (VCC and VBIAS)
RFPA3800TR7
物料型号: - 型号:RFPA3800 - 制造商:RFMD - 封装:SOIC-8

器件简介: - RFPA3800是一款专为高功率、高效率应用设计的单级GaAs HBT功率放大器,适用于无线基础设施线性功率放大器应用。它可以通过改变静态偏置点和负载线来优化线性或饱和操作,并提供低噪声系数,是2nd和3rd级LNAs的优秀解决方案。RFPA3800通过使用热增强型塑料表面贴装slug封装,展现出卓越的热性能。

引脚分配: - 1号引脚:VREF 控制输入到活性偏置电路以设置ICQ。可以用作电源关闭引脚。 - 2号引脚:NC(无连接)。 - 3号引脚:RF IN(射频输入)。需要外部DC阻断。 - 4号引脚:NC(无连接)。 - 5号引脚:NC(无连接)。 - 6号引脚:RF OUT/VCC(射频输出/设备集电极)。 - 7号引脚:RF OUT/VCC(射频输出/设备集电极)。 - 8号引脚:VBIAS(活性偏置电路的供电电压)。 - EPAD:接地,DC和射频地。必须焊接到EVB接地平面上,并通过通孔床以获得热和射频性能。

参数特性: - 供电电压(Vcc和VBIAs)>300 MHz:7.5V - 供电电压(Voc和VBIAs)<300 MHz:5.5V - 参考电流(IREF):10mA - DC供电电流(lc):2300mA - 输出负载VSWR在P3db时:5:1 - 工作结温:160°C - 工作温度范围(T):-40至+85°C - 存储温度:-55至+150°C - ESD等级:人体模型1B级 - 湿度敏感度等级:MSL2

功能详解: - RFPA3800是用于femptocell和中继器应用的最终阶段PA,适用于高效率、高功率应用。 - LTE和GSM收发器应用中的Class AB操作。

应用信息: - GaAs驱动器,用于基站放大器。 - 商用无线基础设施的PA阶段。

封装信息: - 封装:SOIC-8
RFPA3800TR7 价格&库存

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