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RFPA3809PCK-410

RFPA3809PCK-410

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RFPA3809PCK-410 - GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER - RF Micro Devices

  • 数据手册
  • 价格&库存
RFPA3809PCK-410 数据手册
RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier RFPA3809 GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=49dBm (880MHz) Low Noise: NF=3.1dB (2140MHz) P1dB>29dBm 400MHz to 2700MHz Operation Thermally Enhanced Slug Package     Applications  GaAs Pre-Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure Class AB Operation for DCS, PCS, UMTS, LTE, and WLAN Transceiver Applications 2nd/3rd Stage LNA for Wireless Infrastructure Functional Block Diagram  Product Description The RFPA3809 is a GaAs HBT linear power amplifier specifically designed for Wireless Infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high performance single-stage amplifier achieves ultra-high linearity over a broad frequency range. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs. The RFPA3809 also exhibits excellent thermal performance through the use of a thermally-enhanced plastic surface-mount slug package.   Ordering Information RFPA3809SQ RFPA3809SR RFPA3809TR7 RFPA3809TR13 RFPA3809PCK-410 RFPA3809PCK-411 Sample Bag with 25 pieces 7" Reel with 100 pieces 7" Reel with 750 pieces 13" Reel with 2500 pieces 869MHz to 894MHz PCBA with 5-piece Sample Bag 2110MHz to 2170MHz PCBA with 5-piece Sample Bag  Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS GaAs HBT GaAs MESFET InGaP HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS100910 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 11 RFPA3809 Absolute Maximum Ratings Parameter Supply Voltage (VCC and VBIAS) Reference Current (IREF) DC Supply Current (IC) CW Input Power, 2:1 Output VSWR Output Load VSWR at P3dB Operating Junction Temperature Operating Temperature Range (TL) Storage Temperature ESD Rating: Human Body Model Moisture Sensitvity Level Rating 6.5 5 768 26 5:1 160 -40 to +85 -55 to +150 Class 1B MSL 2 Unit V mA mA dBm °C °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Notes: 1. The maximum ratings must all be met simultaneously. 2. Pdiss = PDC+PRFIN-PRFOUT 3. TJ=TL+Pdiss*Rth Parameter 869MHz to 894MHz Frequency Input Power (PIN) Gain (S21) OIP3 P1dB Efficiency at P3dB Input Return Loss (S11) Output Return Loss (S22) Noise Figure WCDMA Ch Power at -65dBc ACPR WCDMA Ch Power at -55dBc ACPR Min. 869 Specification Typ. 880 17 49 29 58 16 18 3.9 17 19.3 Max. 894 18 Unit Condition VCC =5.0V, VBIAS =5.0V, ICQ =275mA MHz dBm dB dBm dBm % dB dB dB dBm dBm 3GPP 3.5, Test Model 1, 64 DPCH 3GPP 3.5, Test Model 1, 64 DPCH VCC =5.0V, VBIAS =5.0V, ICQ =275mA At P3dB, EVB tuned for linear operation 15dBm/tone, tone spacing=1MHz Max recommended, VCC
RFPA3809PCK-410 价格&库存

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