RFPD2710

RFPD2710 RFPD2710 GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz Package: SOT-115J The RFPD2710 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features V+ INPUT OUTPUT ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ Extremely High Output Capability ■ 24.5dB Min. Gain at 1003MHz ■ 450mA Max. at 24VDC Applications ■ 45MHz to 1003MHz CATV Amplifier Systems Ordering Information RFPD2710 Box with 50 Pieces Absolute Maximum Ratings Parameter RF Input Voltage (single tone) DC Supply Over-Voltage (5 minutes) Rating Unit 60 dBmV 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS141017 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 3 RFPD2710 Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω General Performance 23.3 23.8 24.3 dB f = 45MHz 24.5 25.0 26.0 dB f = 1003MHz 0.5 1.0 2.0 dB f = 45MHz to 1003MHz 0.8 dB f = 45MHz to 1003MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 16 dB f = 870MHz to 1003MHz 20 dB f = 45MHz to 320MHz 19 dB f = 320MHz to 640MHz 18 dB f = 640MHz to 870MHz 17 dB f = 870MHz to 1003MHz f = 50MHz to 1003MHz Power Gain [1] Slope Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure Total Current Consumption (DC) 3.0 4.0 dB 420.0 450.0 mA V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 550MHz CTB -77 -74 dBc XMOD -71 -68 dBc CSO -71 -68 dBc CIN 63 66 VO = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[2] dB 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS141017 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 RFPD2710 Package Drawing (Dimensions in millimeters) I U 123 5 7 89 C E J S P R M K O T Q øG N D 0 B 5 10mm scale H L Nominal F A Notes: European Projection Pinning: Pin Name 1 Input 2-3 GND 4 5 V+ 6 ± 0,2 Min 13,4 44,4 Max A 44,6 B 13,6 ± 0,2 13,4 13,8 C 20,4 ± 0,5 19,9 20,9 D 8 ± 0,15 7,85 8,15 E 12,6 ± 0,15 12,45 12,75 F 38,1 ± 0,2 37,9 38,3 3,95 4,2 G 4 +0,2 / -0,05 44,8 H 4 ± 0,2 3,8 4,2 I 25,4 ± 0,2 25,2 25,6 J UNC 6-32 - - K 4,2 ± 0,2 4,0 4,4 L 27,2 ± 0,2 27,0 27,4 M 11,6 ± 0,5 11,1 12,1 N 5,8 ± 0,4 5,4 6,2 O 0,25 ± 0,02 0,23 0,27 P 0,45 ± 0,03 0,42 0,48 Q 2,54 ± 0,3 2,24 2,84 R 2,54 ± 0,5 2,04 3,04 S 2,54 ± 0,25 2,29 2,79 7-8 GND T 5,08 ± 0,25 4,83 5,33 9 Output U 5,08 ± 0,25 4,83 5,33 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS141017 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3