SBA-5089Z

SBA5089Z SBA5089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied     30 GaAs MESFET InGaP HBT 20 SiGe BiCMOS 10 Si BiCMOS S21 0 -20 Si BJT -30 PA Driver Amplifier  Cellular, PCS, GSM, UMTS  S22 -10 Si CMOS   SiGe HBT GaAs pHEMT IP3=34.0dBm at 1950MHz POUT =13.0dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From Single Supply Patented Thermal Design Applications Gain & Return Loss GaAs HBT   IF Amplifier Wireless Data, Satellite Terminals S11 GaN HEMT -40 InP HBT 0 RF MEMS 1 2 3 4 5 6 Frequency (GHz) LDMOS Parameter Small Signal Gain Min. Specification Typ. Max. Unit Condition 18.5 16.5 20.0 21.5 dB 850MHz 18.0 19.5 dB 1950MHz Output Power at 1dB Compression 19.7 dBm 850MHz 18.0 19.5 dBm 1950MHz Output Third Order Intercept Point 36.0 dBm 850MHz 32.0 34.0 dBm 1950MHz Output Power 13.0 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels Bandwidth 4400 MHz Return Loss >10dB Input Return Loss 14.0 20.0 dB 1950MHz Output Return Loss 9.0 11.0 dB 1950MHz Noise Figure 4.5 5.5 dB 1950MHz Device Operating Voltage 4.7 4.9 5.3 V Device Operating Current 72 80 88 mA Thermal Resistance (junction to lead) 70 °C/W Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111204 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SBA5089Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ID) 130 mA Device Voltage (VD) 6 V +17 dBm +150 °C -40 to +85 °C +150 °C Operating Dissipated Power 0.65 W Moisture Sensitivity Level MSL 2 RF Input Power Junction Temp (TJ) Operating Temp Range (TL) Storage Temp Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD