SBB-1000

SBB-1000 50MHz to 1000MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier Preliminary SBB-1000 50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: Bare Die Product Description RFMD’s SBB-1000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Its efficient operation from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applications. It is well-suited for high linearity 5V gain block applications and it is internally matched to 50 Ω. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Die can be delivered at the wafer level or picked to gel or waffle paks. Optimum Technology Matching® Applied Gain and Return Loss (dB) Features OIP3=42dBm @ 250MHz P1dB=20dBm @ 500MHz Single Fixed 5V Supply Compact Die Size (0.59mmx0.70mm) Patented Thermal Design and Bias Circuit Low Thermal Resistance 30.0 20.0 10.0 0.0 -10.0 -20.0 -30.0 -40.0 0.0 Gain and Return Loss versus Frequency VS=5V, IS=90mA GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Applications GSG Probe Data with Bias Tees ZS=ZL=50 Ohms, T=25°C IRL Gain ORL 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 PA Driver Amp RF Pre-driver and RF Receive Path Military Communications Test and Instrumentation Frequency (GHz) Parameter Frequency of Operation Small Signal Gain Output Power at 1dB Compression Min. 50 Specification Typ. Max. Unit Condition 1000 MHz 15.5 dB Freq=250MHz, 500MHz, 1000MHz 21.5 dBm Freq=250MHz 20.0 dBm Freq=500MHz 19.0 dBm Freq=1000MHz 42.0 dBm Freq=250MHz Output IP3 40.5 dBm Freq=500MHz 35.5 dBm Freq=1000MHz Input Return Loss >25 dB Freq=500MHz Output Return Loss 18.5 dB Freq=500MHz Current 90 mA Noise Figure 3.4 dB Freq=500MHz Thermal Resistance 48.8 °C/W Junction to lead (89 pkg) Test Conditions: Z0 =50 Ω, VD =5V, ID =90mA, T=25°C, OIP3 Tone Spacing=1MHz, POUT/tone=0dBm. GSG Probe Data with Bias Tees. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. EDS-106098 Rev A 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SBB-1000 Absolute Maximum Ratings Parameter Total Current (ID) Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) RF Input Power Storage Temperature Range Operating Junction Temp (TJ) ESD Rating - Human Body Model (HBM) Preliminary Rating 110 5.5 0.61 -40 to +85 +12(TBR)* -55 to +150 +150 Class 1C Unit mA V W °C dBm °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. * TBR=To Be Reviewed Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD