SBB5089Z
SBB5089Z
50MHz to 6000MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
Features
RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB5089Z does
not require a dropping resistor as compared to typical Darlington amplifiers. The SBB5089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Gain and Return Loss versus Frequency
(with BiasTees)
Optimum Technology
Matching® Applied
30.0
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Gain and Return Loss (dB)
0.0
-20.0
-40.0
25C
25C
25C
0.0
GaN HEMT
1.0
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
2.0
3.0
4.0
5.0
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Terminals
6.0
Frequency (GHz)
RF MEMS
Parameter
Small Signal Gain
-10.0
Si BJT
10.0
-30.0
Wideband Flat Gain to 4GHz:
±1.1dB
P1dB =20.4dBm at 1950MHz
Applications
20.0
Si CMOS
GaAs HBT
GaAs MESFET
Min.
Specification
Typ.
Max.
Unit
Condition
19.0
18.3
14.5
20.5
22.0
dB
850MHz
19.0
21.5
dB
1950MHz
15.5
17.5
dB
6000MHz
Output Power at 1dB Compression
20.5
dBm
850MHz
19.0
20.0
dBm
1950MHz
Third Order Intercept Point
38.5
dBm
850MHz
33.0
35.0
dBm
1950MHz
Bandwidth
3000
MHz
Min. 10dB return loss (typ.)
Input Return Loss
10.0
13.0
dB
1950MHz
Output Return Loss
10.0
14.0
dB
1950MHz
Reverse Isolation
23.3
dB
1950MHz
Noise Figure
3.9
4.9
dB
1950MHz
Device Operating Voltage
4.75
5.0
5.25
V
Device Operating Current
60.0
75.0
92.0
mA
Thermal Resistance
69.9
°C/W
junction - lead
Test Conditions: VD =5V, ID =75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-dBm, TL =25°C, ZS =ZL =50Tested with Bias Tees
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS150622
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 10
SBB5089Z
Absolute Maximum Ratings
Rating
Unit
Device Current (ID)
Parameter
100
mA
Max Device Voltage (VD)
5.5
V
Max RF Input Power
24
dBm
Max Operating Dissipated Power
0.55
W
Junction Temp (TJ)
+150
°C
Operating Temp Range (TL)
-40 to +105
°C
Storage Temp Range
-40 to +150
°C
ESD Rating - Human Body Model (HBM)
Moisture Sensitivity Level
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Class 1C
MSL2
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD
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