SBF-4089

SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied     S-Parameters vs Frequency +25c 16 InGaP HBT s22 -5 14.5 Gain(dB) SiGe HBT GaAs pHEMT  s11 15 SiGe BiCMOS  0 s21 15.5 14 -10 13.5 13 -15 IRL,ORL(dB) GaAs MESFET Si BiCMOS IP3 =42dBm at 240MHz Stable Gain Over Temperature Robust 1000V ESD, Class 1C Operates From Single Supply Low Thermal Resistance Applications   GaAs HBT     Receiver IF Amplifier Cellular, PCS, GSM, UMTS PA Driver Amplifier Wireless Data, Satellite Terminals 12.5 Si CMOS 12 Si BJT -20 11.5 GaN HEMT 11 0 InP HBT 100 200 300 400 500 600 700 800 -25 900 Freq RF MEMS LDMOS Parameter Min. Specification Typ. Max. Unit Condition Small Signal Gain 14.9 dB 70MHz 14.8 16.3 dB 240MHz 14.7 16.2 dB 500MHz Output Power at 1dB Compression 20.1 dBm 70MHz 20.1 dBm 240MHz 18.4 19.9 dBm 400MHz Output Third Order Intercept Point 40.0 dBm 70MHz 42.0 dBm 240MHz 39.0 41.0 dBm 400MHz Input Return Loss 13.0 17.0 dB 500MHz Output Return Loss 12.0 16.0 dB 500MHz Noise Figure 3.3 4.3 dB 500MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 82 90 98 mA Thermal Resistance 43 °C/W junction to lead Test Conditions: VS =8V, ID =90mA Typ., TL =25°C. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =33. Data with Application Circuit. 13.3 13.2 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SBF4089Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ID) 150 mA Device Voltage (VD) 6 V 0.8 W Max Operating Dissipated Power Max Input Power Rating Junction Temp (TJ) Operating Temp Range (TL) Storage Temp ESD Rating - Human Body Model (HBM) 15 dBm +150 °C -40 to +85 °C +150 °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and