SBW-5089Z

SBW-5089(Z) SBW-5089(Z) DCto8GHz Cascadable InGaP/GaAs HBT MMIC Amplifier DCto8GHz CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8GHz and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DCblocking capacitors, a bias resistor and an RF choke. Gain Return Loss versus Frequency, ID =80mA (Typ), Tuned Application Circut Optimum Technology Matching® Applied GaAs HBT 25 0 20 -5 GaAs MESFET InGaP HBT SiGe BiCMOS SiGe HBT GaAs pHEMT Gain Gain (dB) Si BiCMOS 15 -10 ORL 10 -15 Si CMOS IRL Si BJT 5 -20 GaN HEMT InP HBT 0 RF MEMS -25 0 1 2 LDMOS 4 5 6 7   Available in RoHS Compliant and Pb-Free (Z Part Number) 50 Cascadable Gain Block Wideband Flat Gain to 3GHz: +/-1.4dB P1dB = 13.4 at 6GHz Input / Output VSWR 10dB 1950MHz DCto6000MHz DCto6000MHz junction to backside RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS150923 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 7 SBW-5089(Z) Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD) 130 mA Max Device Voltage (VD) 6 V Max RF Input Power 17 dBm Max Dissipated Power 0.65 W Max Junction Temperature (TJ) 150 °C -40 to + 85 °C Operating Temperature Range (TL) Max Storage Temperature 150 °C ESD Rating - Human Body Model 1C Class Moisture Sensitivity Level Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. MSL 2 Typical Performance at Key Operating Frequencies Parameter Units 500MHz 850MHz 1950MHz 2400MHz 3500MHz 5800MHz Small Signal Gain dB 20.5 20.3 19.1 18.7 17.3 15.1 Output Third Order Intercept Point dBm 36.5 35.5 34.0 33.0 30.5 25.5 Output Power at 1dB Compression dBm 20.2 20.1 19.4 19.4 17.5 13.4 Input Return Loss dB 26 26 19 15 12 12.5 10.9 Output Return Loss dB 19 17.5 12 11 10.5 Reverse Isolation dB 22 23 23 23 23 23 Noise Figure dB 3.6 3.6 3.9 3.9 4.1 4.3 Test Conditions: VS =8V, ID =80mA Typ, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm. TL =25°C, Bias Resistance=39, ZS =ZL =50. OIP3 vs. Frequency P1dB vs. Frequency 26 39 36 23 33 OIP3 (dBm) P1dB (dBm) 20 17 14 11 8 30 27 24 21 -40°C 18 +25°C +85°C 15 -40°C +25°C +85°C 12 5 0 1 2 3 4 Frequency(GHz) 5 0 6 1 2 3 4 Frequency (GHz) 5 6 Noise Figure vs. Frequency 6 5 NF (dB) 4 3 2 -40°C +25°C +85°C 1 0 0 2 of 7 1 2 3 4 Frequency (GHz) 5 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS150923 SBW-5089(Z) RF Performance With Basic Application Circuit (Bias: ID =80mA Typ.) S11 vs. Frequency S21 vs. Frequency 25 |S11| (dB) |S21| (dB) 20 15 10 -40°C +25°C +85°C 5 0 0 1 2 3 4 5 6 7 8 9 10 0 -5 -10 -15 -20 -25 -30 -35 -40 -40°C +25°C +85°C 0 1 2 3 Frequency (GHz) 4 -10 |S12| (dB) |S22| (dB) -40°C +25°C +85°C -15 -20 -25 -30 1 2 3 4 5 6 7 8 9 8 9 10 9 10 -40°C +25°C +85°C 0 10 1 2 3 4 5 6 7 8 Frequency (GHz) IS-95 @ 850MHz Adj. Channel Pwr. vs. Channel output Pwr. -35 -35 -40 -40 -45 -45 -50 IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power -30 dBc dBc 7 0 -5 -10 -15 -20 -25 -30 -35 -40 Frequency (GHz) -30 6 S22 vs. Frequency S12 vs. Frequency 0 5 Frequency (GHz) -50 -55 -55 -40°C +25°C +85°C -60 -65 -40°C +25°C +85°C -60 -65 -70 -70 6 8 10 12 14 16 dBm 6 8 10 12 14 16 dBm Note: Full S-Parameter data available at www.RFMD.com DS150923 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 7 SBW-5089(Z) Typical RF Performance With Tuned Application Circuit (Bias: ID =80mA Typ.) S11 vs. Frequency S21 vs. Frequency 0 25 -10 |S11| (dB) |S21| (dB) 20 15 10 -40°C +25°C +85°C 5 -20 -40°C +25°C +85°C -30 -40 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 6 7 8 9 10 0 -10 -40°C +25°C +85°C -10 |S22| (dB) -15 |S12| (dB) 5 S22 vs. Frequency S12 vs. Frequency -20 -20 -40°C +25°C +85°C -30 -25 -40 -30 0 1 2 3 4 5 6 Frequency (GHz) 4 of 7 4 Frequency (GHz) Frequency (GHz) 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS150923 SBW-5089(Z) Application Circuit Schematic R BIAS ID VS 1000 pF 1 uF R LD C CD Bias Inductor LC 4 1 R F in SW-5089 3 R F out VD CB CB 2 Application Circuit Layout Application Circuit Element Values Reference Designator 100MHz 500MHz 850MHz 1950MHz 2400MHz 3500MHz 39pF CB 1000pF 220pF 100pF 68pF 56pF CD 100pF 100pF 68pF 22pF 22pF 15pF LC 470nH 68 nH 33nH 22nH 18nH 15nH Recommended Bias Resistance for ID =80mA Supply Voltage (VS) (Volts)