SDA2000

SDA-2000 SDA-2000 GaAs Distributed Amplifier Package: Die, 3.1mm x 1.45mm x 0.102mm RFMD’s SDA-2000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators, clock drivers, broadband automated test equipment (ATE), military, and aerospace applications. Features ■ DC to 22GHz Operation ■ Output Voltage to 8VPP ■ Gain = 12dB Typical ■ Noise Figure = 5.5dB Typical ■ 410mA Total Current Applications ■ Drive for Single-Ended (SE) MZM ■ NRZ, DPSK, ODB, RZ ■ Clock Driver for RZ and CS Pulse Carver ■ Broadband ATE ■ Military ■ Aerospace Functional Block Diagram Ordering Information SDA-2000 GaAs Distributed Amplifier, GelPak, 10 pieces or more SDA-2000SB Sample Bag, GaAs Distributed Amplifier, GelPak, 2 pieces RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS140204 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 8 SDA-2000 Absolute Maximum Ratings Parameter Rating Unit +9.0 VDC Gate Bias Voltage (VTI) -2 to +1 VDC Gate Bias Voltage (VG2) (VDD-8.0) to VDD VDC Drain Bias Voltage (VDD) RF Input Power (VDD = +7.0VDC) dBm Operating Junction Temperature (TJ) +175 °C Continuous Power Dissipation (T = +85°C) 5 W Thermal Resistance (Pad to Die Bottom) 17 °C/W Storage Temperature -40 to +150 °C Operating Temperature -40 to +85 °C ESD JESD22-A114 Human Body Model (HBM) Class 0 (All Pads) Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21,