SDA5000

SDA-5000 SDA-5000 GaAs Distributed Amplifier Package: Die, 2.2mm x 1.45mm x 0.102mm RFMD’s SDA-5000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, broadband test equipment (ATE), military, and aerospace applications. Features ■ DC to 35GHz Operation ■ +17dBm P3dB ■ Gain = 11.8dB Typical ■ Noise Figure = 4dB ■ Output Voltage to 8VPP ■ 100mA Total Current Applications ■ Instrumentation ■ Military ■ Aerospace ■ Broadband ATE Functional Block Diagram Ordering Information SDA-5000 GaAs Distributed Amplifier, GelPak, 10 pieces or more SDA-5000SB GaAs Distributed Amplifier, GelPak, 2 pieces RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS140210 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 7 SDA-5000 Absolute Maximum Ratings Parameter Rating Unit +8.0 VDC Gate Bias Voltage (VTI) -2 to +0 VDC Gate Bias Voltage (VG2) (VDD-8.0) VDC to VDD V Drain Bias Voltage (VDD) RF Input Power (VDD = +8.0VDC) 15 dBm Operating Junction Temperature (TJ) +175 °C Continuous Power Dissipation (T = +85°C) 750 mW Thermal Resistance (Pad to Die Bottom) 116 °C/W -40 to +150 °C -40 to +85 °C Storage Temperature Operating Temperature ESD JESD22-A114 Human Body Model (HBM) Class 0 (All Pads) Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21,