SDA-7000
SDA-7000
GaAs Distributed Amplifier
Package: Die, 2.40mm x 1.21mm x
0.102mm
RFMD’s SDA-7000 is a directly coupled (DC) GaAs
microwave monolithic integrated circuit (MMIC) distributed
driver amplifier die designed to support a wide array of high
frequency commercial, military, and space applications. They
are ideal for wideband amplifier gain blocks, modulators, clock
drivers, broadband automated test equipment (ATE), military,
and aerospace applications.
Features
■
DC to 40GHz Operation
■
Gain = 11dB Typical
■
Noise Figure = 5dB Typical
■
200mA Total Current
Applications
■
Drive for Single-Ended (SE) MZM
■
NRZ, DPSK, ODB, RZ
■
Clock Driver for RZ and CS Pulse
Carver
■
Broadband ATE
■
Instrumentation
■
Military
■
Aerospace
Functional Block Diagram
Ordering Information
SDA-7000
GaAs Distributed Amplifier, GelPak, 10 pieces or more
SDA-7000SB Sample Bag, GaAs Distributed Amplifier, GelPak, 2 pieces
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
®
DS140210
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 9
SDA-7000
Absolute Maximum Ratings
Parameter
Rating
Unit
+9.0
VDC
Gate Bias Voltage (VTI)
-2 to +1
VDC
Gate Bias Voltage (VG2)
(VDD-5.0) to VDD
VDC
RF Input Power (VDD = +7.0VDC)
+15
dBm
Operating Junction Temperature (TJ)
+175
°C
Continuous Power Dissipation (T = +85°C)
1400
mW
63
°C/W
-40 to +150
°C
-40 to +85
°C
Drain Bias Voltage (VDD)
Thermal Resistance (Pad to Die Bottom)
Storage Temperature
Operating Temperature
ESD JESD22-A114 Human Body Model (HBM)
Class 0 (All Pads)
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21,
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