SGA-2163

SGA2163Z SGA2163ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA2163Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. GaAs HBT 12 0  9 Gain (dB) -10 IRL 6 ORL 3 GaAs pHEMT -20 -30 Return Loss (dB)  InGaP HBT SiGe HBT  GAIN GaAs MESFET    Gain & Return Loss vs. Freq. @TL=+25°C Si BiCMOS  Broadband Operation: DC to 5000MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package Applications Optimum Technology Matching® Applied SiGe BiCMOS   PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Si CMOS 0 Si BJT -40 0 1 GaN HEMT 2 3 Frequency (GHz) 4 5 RF MEMS Parameter Small Signal Gain Min. 9.5 Output Power at 1dB Compression Output Third Intercept Point Specification Typ. 10.5 9.8 9.6 7.1 6.2 21.0 18.0 5000 Max. 11.5 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB Bandwidth Determined by Return Loss Input Return Loss 22.5 dB 1950MHz Output Return Loss 24.8 dB 1950MHz Noise Figure 4.4 dB 1950MHz Device Operating Voltage 1.9 2.2 2.5 V Device Operating Current 17 20 23 mA Thermal Resistance 255 °C/W junction - lead Test Conditions: VS =5V, ID =20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-10dBm, RBIAS =140, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA2163Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 40 Max Device Voltage (VD) 4 V Max RF Input Power +18 dBm Max Junction Temperature (TJ) +150 °C -40 to +85 °C +150 °C Operating Temperature Range (TL) Max Storage Temperature Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. mA The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and