SGA-4263

SGA-4263(Z) SGA-4263(Z) DC to 3500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-4263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.      Optimum Technology Matching® Applied Gain & Return Loss vs. Frequency VD= 3.2 V, ID= 45 mA (Typ.) GaAs HBT 16 GaAs MESFET Gain (dB) Si BiCMOS  SiGe HBT -10 ORL 8 -20 IRL 4 GaAs pHEMT -30 Return Loss (dB) 12 SiGe BiCMOS Applications 0 GAIN InGaP HBT Available in Lead Free, RoHS Compliant, and Green Packaging (Z Part Number) Broadband Operation: DC to 3500MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package     PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Si CMOS 0 Si BJT -40 0 1 GaN HEMT 2 3 4 Frequency (GHz) 5 6 RF MEMS Parameter Small Signal Gain Min. 12.5 Output Power at 1dB Compression Output Third Intercept Point Specification Typ. 14.0 12.7 12.4 14.2 12.5 29.3 25.7 3500 Max. 15.5 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB Bandwidth Determined by Return Loss Input Return Loss 31.3 dB 1950MHz Output Return Loss 13.8 dB 1950MHz Noise Figure 3.7 dB 1950MHz Device Operating Voltage 2.9 3.2 3.5 V Device Operating Current 41 45 49 mA Thermal Resistance 255 °C/W (Junction - Lead) Test Conditions: VS =8V, ID =45mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS =110, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS091118 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SGA-4263(Z) Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 90 mA Max Device Voltage (VD) 5 V Max RF Input Power +18 dBm Max Junction Temp (TJ) +150 °C -40 to +85 °C +150 °C Operating Temp Range (TL) Max Storage Temp Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD