SGA-5289Z

SGA5289Z SGA5289ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Features    High Gain: 12.7dB at 1950MHz Cascadable 50 Operates from Single Supply Low Thermal Resistance Package GaAs HBT Gain & Return Loss vs. Frequency GaAs MESFET VD= 3.5 V, ID= 60 mA (Typ.) 20 InGaP HBT ES IG Applications Optimum Technology Matching® Applied   0 15 GaAs pHEMT Si CMOS ORL 10 -20 IRL 5 Si BJT GaN HEMT 0 0 1 2 3 4 Frequency (GHz) N InP HBT RF MEMS 5 R LDMOS Specification Typ. FO Parameter Min. Small Signal Gain 12.1 O T Output Power at 1dB Compression Output Third Intercept Point  PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite D SiGe HBT EW Gain (dB) Si BiCMOS -10 GAIN Return Loss (dB)  SiGe BiCMOS   N The SGA5289Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. S Product Description 13.4 12.7 12.5 15.8 14.4 31.8 28.1 5000 Max. 14.7 -30 -40 6 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB N Bandwidth Determined by Return Loss Input Return Loss 29.2 dB 1950MHz Output Return Loss 18.1 dB 1950MHz Noise Figure 3.8 dB 1950MHz Device Operating Voltage 3.1 3.5 3.9 V Device Operating Current 54 60 66 mA Thermal Resistance 97 °C/W (Junction - Lead) Test Conditions: VS =8V, ID =60mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS =75, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS20151204 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGA5289Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 120 mA Max Device Voltage (VD) 5 V +16 dBm +150 °C -40 to +85 °C Max Storage Temp +150 °C Moisture Sensitivity Level MSL 2 Max RF Input Power Max Junction Temp (TJ) Operating Temp Range (TL) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Unit N ES IG Typical Performance at Key Operating Frequencies S Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD