SGA-5386Z

SGA5386Z SGA5386ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Features    High Gain: 14.9dB at 1950MHz Cascadable 50Ω Operates from Single Supply Low Thermal Resistance Package ES IG Applications  Gain & Return Loss vs. Frequency GaAs HBT VD= 3.6 V, ID= 60 mA (Typ.) 20 GaAs MESFET InGaP HBT Si BiCMOS SiGe HBT -10 IRL 10 -20 TL=+25ºC EW 5 GaAs pHEMT ORL Si CMOS 0 0  1 2 3 Frequency (GHz) 4 -30 -40 5 N Si BJT  PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite D Gain (dB) 15 SiGe BiCMOS  0 GAIN Return Loss (dB) Optimum Technology Matching® Applied   N The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. S Product Description GaN HEMT R RF MEMS Specification Typ. FO Parameter Min. Small Signal Gain 15.2 O T Output Power at 1dB Compression Output Third Intercept Point 16.6 14.9 14.0 17.0 14.7 32.0 29.0 5000 Max. 18.3 Unit dB dB dB dBm dBm dBm dBm MHz Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 850MHz 1950MHz >10dB N Bandwidth Determined by Return Loss Input Return Loss 18.5 dB 1950MHz Output Return Loss 30.0 dB 1950MHz Noise Figure 4.0 dB 1950MHz Device Operating Voltage 3.1 3.6 4.1 V Device Operating Current 54 60 66 mA Thermal Resistance 97 °C/W (Junction - Lead) Test Conditions: VS =8V, ID =60mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =75Ω, TL =25°C, ZS =ZL =50Ω RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS20151204 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 7 SGA5386Z Absolute Maximum Ratings Max Device Current (ID) 120 mA Max Device Voltage (VD) 5 V +16 dBm +150 °C -40 to +85 °C +150 °C Max RF Input Power Max Junction Temp (TJ) Operating Temp Range (TL) Max Storage Temp Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD