SGA-8343Z

SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU DirecOptimum Technology tive 2002/95. This package is also manufactured with Matching® Applied green molding compounds that contain no antimony triGaAs HBT oxide nor halogenated fire retardants. GaAs MESFET DC to 6GHz Operation  0.9dB NFMIN at 0.9GHz  24dB GMAX at 0.9GHz  |GOPT|=0.10 at 0.9GHz  OIP3=+28dBm, P1dB=+9dBm  Typical Performance - 3V, 10mA SiGe BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT 40 35 30 25 20 2 .4 2 .1 1 .8 1 .5 1 .2 NFMIN 15 10 5 0 0 .9 0 .6 0 .3 0 Gmax Gain 0 1 RF MEMS 2 3 4 5 Frequency (GHz) 6 7 NFMIN (dB) Gain, Gmax (dB) Si BiCMOS Low Cost, High Performance, Versatility Applications  InGaP HBT   Analog and Digital Wireless Systems  3G, Cellular, PCS, RFID  Fixed Wireless, Pager Systems   Driver Stage for Low Power Applications Oscillators 8 LDMOS Parameter Min. Specification Typ. Max. Unit Condition Maximum Available Gain 23.9 dB 0.9GHz, ZS =ZS*, ZL =ZL* Minimum Noise Figure 19.3 17.7 0.94 dB dB dB 1.9GHz 2.4GHz 0.9GHz, ZS =GammaOPT, ZL =ZL* 23.0 dB dB dB 1.9GHz 2.4GHz Insertion Gain 1.10 1.18 22.0 21.0 Noise Figure 0.9GHz, ZS =ZL =50 1.40 1.75 dB 1.9GHz, LNA Application Circuit Board[2] Gain 15.5 16.5 17.5 dB 1.9GHz, LNA Application Circuit Board[2] Output Third Order Intercept Point 25.8 27.8 dBm 1.9GHz, LNA Application Circuit Board[2] 7.5 9.0 dBm 1.9GHz, LNA Application Circuit Board[2] Output 1dB Compression Point DC Current Gain 120 Breakdown Voltage 5.7 Thermal Resistance Operating Voltage Operating Current [1] Performance is based on historical statistical analysis. 180 6.0 200 300 V collector - emitter °C/W junction - lead 4.0 V collector - emitter 50 mA collector - emitter [2] 100% tested on test fixture optimized for 1.9GHz operation. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS20160926 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 13 SGA8343Z Absolute Maximum Ratings Parameter Rating Unit Collector Current (ICE) 72 mA Base Current (IB) 1 mA Collector - Emitter Voltage (VCE) 5 V Collector - Base Voltage (VCB) 12 V Emitter - Base Voltage (VEB) 4.5 V 5 dBm -40 to +150 °C 350 mW RF Input Power (PIN) Storage Temperature Range (TSTOR) Power Dissipation (PDISS) This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. Freq (GHz) VS (V) VCE (V) ICQ (mA) NF (dB) Gain (dB) This product also has the following attributes: Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free SVHC Free +150 °C Operating Junction Temperature (TJ) -40 to +85 °C Operating Temperature Range Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Typical Performance - Engineering Application Circuits Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. P1dB (dBm) OIP3[1] (dBm) S11 (dB) S22 (dB) 0.90 53.0 3.0 12 1.25 18.2 9 27.3 -16 -18 1.575 3.3 2.7 10 1.25 15.7 6.8 26.5 -10 -25 1.90 5.0 3.0 12 1.4 16.5 9 27.8 -9 -24 2.40 3.3 2.7 10 1.6 14.4 9 27.5 -13 -24 [3] POUT=0dBm per tone, 1MHz tone spacing. Refer to the application note for additional RF data, PCB layouts, BOMs, biasing instructions, and other key issue to be considered. Peak Performance Under Optimum Matching Conditions Freq (GHz) VCE (V) ICQ (mA) NF (dB)[2] GMAX (dB) P1dB (dBm)[4] Comments series feedback OIP3 (dBm)[4] 0.90 2 10 0.90 23.7 10 25 0.90 3 10 0.94 23.9 13 29 1.90 2 10 1.05 19.1 10 25 1.90 3 10 1.10 19.3 13 29 2.40 2 10 1.15 17.4 10 25 2.40 3 10 1.18 17.7 13 29 [2] ZS =OPT, ZL =ZL*, The input matching circuit loss have been de-embedded. [3] ZS =ZSOPT, ZL =ZLOPT, where ZSOPT and ZLOPT have been tuned for max P1dB (current allowed to drive-up with constant VCE). [4] ZS =ZSOPT, ZL =ZLOPT, where ZSOPT and ZLOPT have been tuned for max OIP3. Note: Optimum NF, P1dB, and OIP3 performance cannot be achieved simultaneously. 2 of 13 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS20160926 SGA8343Z Typical Performance - De-embedded S-Parameters Minimum Noise Figure (3V,10mA) 35 -5 30 -10 -15 Isolation 20 -20 15 -25 Gmax 10 -30 Gain 5 -35 0 -40 0 1 2 3 4 5 6 7 30 2 25 1.6 20 1.2 15 FMIN 0.8 0.4 5 0 0 0 8 1 2 3 4 5 6 7 Frequency (GHz) Frequency (GHz) S11 versus Frequency 10 GAS GAS (dB) 25 2.4 NFMIN (dB) 0 Isolation (dB) Gain, Gmax (dB) Gain vs Frequency (3V,10mA) 40 S22 versus Frequency ΓOPT (3V,10mA) S11,S22 vs Frequency (3V,10mA) 1.0 1.0 2.0 0.5 2.0 0.5 8 GHz 6 GHz 0.2 0.2 5.0 5.0 4 GHz 1.9 GHz 0.0 0.2 0.9 GHz 2.4 GHz 3 GHz 0.5 1.0 2.0 0.0 5.0 0.2 inf 3 GHz 0.5 1.0 2.0 5.0 inf 4 GHz 2 GHz S22 0.2 5.0 5 GHz 0.2 5.0 1 GHz 6 GHz S11 0.5 2.0 1.0 0.5 2.0 1.0 Note: S-parameters are de-embedded to the device leads with ZS=ZL=50. De-embedded S-parameters can be downloaded from our website (www.rfmd.com) DS20160926 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 13 SGA8343Z Typical Performance - Noise Parameters - 3V, 10mA Frequency (GHz) NFMIN (dB)[5] OPT Mag