SGB-2233

SGB-2233(Z) SGB-2233(Z) DC to 4.5GHz Active Bias Gain Block DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Features „ „ „ IP3 =19.0dBm at 1950MHz „ Low Thermal Resistance=221C/W Applications GaAs MESFET InGaP HBT SiGe BiCMOS SiGe HBT „ Active Bias NC D Si BiCMOS 9 „ High Reliability SiGe HBT Technology Robust Class 1C ESD Simple and Small Size P1dB =6.7dBm at 1950MHz ES NC NC VCC GaAs HBT Vbias Matching® Applied „ IG RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB-2233 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an exterOptimum Technology nal bias inductor choke is required for the application band. N Product Description NC NC NC Si CMOS EW GaAs pHEMT Si BJT NC InP HBT RF MEMS R Specification Typ. FO Parameter Min. Small Signal Gain T 11.4 O Output Power at 1dB Compression 5.2 N Output Third Order Intercept Point 16.5 Noise Figure Frequency of Operation DC Input Return Loss 13.5 Output Return Loss 12.7 Current 21.0 Thermal Resistance Test Conditions: Z0 =50Ω, VCC =3V, IC =25mA, T=30°C 13.9 12.9 12.5 7.9 6.7 6.4 20.5 19.0 19.0 4.2 19.5 16.7 25.0 221 NC NC NC GND LDMOS N NC GaN HEMT „ RFOUT RFIN „ 3V Battery Operated Applications LO Buffer Amp RF Pre-Driver and RF Receive Path Max. 14.4 5.2 4500 29.0 Unit dB dB dB dBm dBm dBm dB dB dB dB MHz dB dB mA °C/W Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 2400MHz 850MHz 1950MHz 2400MHz 1950MHz 1950MHz 1950MHz junction to backside RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS20160224 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SGB-2233(Z) Absolute Maximum Ratings Parameter Rating Unit Current (IC total) 60 mA Max Device Voltage (VD) 5 V Max RF Input Power 20 dBm Power Dissipation 0.2 W Max Junction Temperature (TJ) 150 °C Operating Temperature Range (TL) -40 to + 85 °C Max Storage Temperature -40to+150 °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Detailed Performance Table: VCC =3V, IC =25mA, T=25°C, Z=50Ω Small Signal Gain (G) Output 3rd Order Intercept Point (OIP3) Output Power at 1dB Compression (P1dB) dB dBm dBm 14.2 Input Return Loss (IRL) Output Return Loss (ORL) Reverse Isolation (S12) dB dB dB 32.3 34.5 17.7 Noise Figure (NF) dB 4.3 500 MHz N Simplified Device Schematic 15 14 1950 MHz 2400 MHz 3500 MHz 14.1 21.5 8.2 13.9 20.5 7.9 12.9 19.0 6.7 12.5 19.0 6.4 11.2 25.8 25.8 18.0 23.4 22.0 18.2 19.5 16.7 18.9 18.9 16.3 19.2 14.3 15.4 20.2 3.9 3.9 4.2 4.6 5.0 13 FO R 16 850 MHz ES 100 MHz D Unit EW Parameter IG N Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD