SGB-6433

SGB-6433(Z) SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Features GaAs HBT „ „ „ IP3 =31dBm at 1950MHz „ Low Thermal Resistance=60C/W Applications GaAs MESFET InGaP HBT Si BiCMOS NC N Si BJT GaN HEMT R Specification Typ. FO Min. T 14.5 O Output Power at 1dB Compression 16.5 Output Third Order Intercept Point N NC NC NC GND RF MEMS Small Signal Gain 5V Applications LO Buffer Amp RF Pre-Driver and RF Receive Path NC NC Parameter „ „ RFOUT RFIN Si CMOS NC NC SiGe HBT GaAs pHEMT „ Active Bias D SiGe BiCMOS NC EW 9 „ High Reliability SiGe HBT Technology Robust Class 1C ESD Simple and Small Size P1dB =18.5dBm at 1950MHz ES Vbias NC NC VCC Optimum Technology Matching® Applied „ IG RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6433 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6433 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an external bias inductor choke is required for the application band. N Product Description 28.5 Noise Figure Frequency of Operation DC Current 76 Input Return Loss 12.0 Output Return Loss 8.5 Thermal Resistance Test Conditions: Z0 =50Ω, VCC =5V, IC =88mA, T=30°C 20.0 16.0 15.0 18.5 18.5 17.5 33.0 31.0 31.0 4.1 88 15.0 11.5 60 Max. 17.5 5.1 3500 98 Unit dB dB dB dBm dBm dBm dB dB dB dB MHz mA dB dB °C/W Condition 850MHz 1950MHz 2400MHz 850MHz 1950MHz 2400MHz 850MHz 1950MHz 2400MHz 1950MHz 1950MHz 1950MHz junction to backside RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS20160225 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SGB-6433(Z) Absolute Maximum Ratings Parameter Rating Unit mA Current (lC total) 150 Max Device Voltage (VD) 6.5 V Max RF Input Power 20 dBm Power Dissipation 0.75 W Max Junction Temperature (TJ) 150 °C Operating Temperature Range (TL) -40 to + 85 °C Max Storage Temperature -40 to +150 °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Detailed Performance Table: VCC =5V, IC =88mA, T=25°C, Z=50Ω 100 MHz Small Signal Gain (G) Output 3rd Order Intercept Point (OIP3) Output Power at 1dB Compression (P1dB) dB dBm dBm 21.2 Input Return Loss (IRL) Output Return Loss (ORL) Reverse Isolation (S12) dB dB dB 43.6 15.8 24.4 Noise Figure (NF) dB 5.1 500 MHz EW N Simplified Device Schematic 15 1950 MHz 2400 MHz 3500 MHz 20.7 34.0 18.9 20.0 33.0 18.5 16.0 31.0 18.5 15.0 31.0 17.5 12.3 33.3 13.9 24.6 25.6 12.2 25.0 15.0 11.5 24.4 13.8 10.2 23.8 9.7 11.3 22.5 3.6 3.6 4.1 4.6 5.2 14 13 FO R 16 850 MHz ES Unit D Parameter IG N Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD