SGC6389Z

SGC-6389Z SGC-6389Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK NOT FOR NEW DESIGNS Package: SOT-89 Product Description Features Optimum Technology Matching® Applied GaAs HBT Gain and Return Loss VD = 5V, ID = 84mA 30.0 20.0 10.0 SiGe HBT GaAs pHEMT Si CMOS 0.0 S22 W  Gain (dB) Si BiCMOS -10.0 Si BJT S11 -30.0 RF MEMS 0.0 0.5 FO R LDMOS Parameter Min. 1.0 1.5 2.0 2.5 Frequency (GHz) Specification Typ.   Single Fixed 5V Supply No Dropping Resistor Required Patented Self Bias Circuitry Gain = 12.8dBm at 1950MHz P1dB = 18.6dBm at 1950MHz OIP3 = 34.5dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Applications    Bias Tee Data, ZS = ZL = 50 , TL = 25°C InP HBT 3.0 3.5 Max.  PA Driver Amplifier Cellular, PCS, GSM, UMTS, WCDMA IF Amplifier Wireless Data, Satellite 4.0 Unit Condition 14.8 11.3 16.3 17.8 dB 850MHz 12.8 14.3 dB 1950MHz* 11.9 dB 2400MHz Output Power at 1dB Compression 19.5 dBm 850MHz 17.6 18.6 dBm 1950MHz* 18.2 dBm 2400MHz Output Third Order Intercept Point 36.0 dBm 850MHz 32.5 34.5 dBm 1950MHz* 33.5 dBm 2400MHz Input Return Loss 9.0 12.5 dB 1950MHz* Output Return Loss 8.5 11.5 dB 1950MHz* Noise Figure 3.7 4.5 dB 1950MHz Thermal Resistance 60 °C/W junction - lead Device Operating Voltage 5.0 V Device Operating Current 74.0 84.0 94.0 mA Test Conditions: VD = 5V, ID = 84mA Typ., OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBm, Bias Tee Data, ZS = ZL = 50, *Test results at 1950MHz measured with Application Circuit NO T Small Signal Gain NE -20.0 GaN HEMT   DE S21 SiGe BiCMOS   GaAs MESFET InGaP HBT  SI GN S RFMD’s SGC-6389Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6389Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-6389Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS120409 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGC-6389Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ICE) 120 Device Voltage (VCE) 6.5 V 8 dBm +150 °C -40 to +85 °C +150 °C RF Input Power* (See Note) Junction Temp (TJ) Operating Temp Range (TL) Storage Temp mA The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and