SGC6489Z

SGC-6489Z SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK NOT FOR NEW DESIGNS Package: SOT-89 Product Description Features Optimum Technology Matching® Applied 30.0 GaAs MESFET 20.0 InGaP HBT SiGe BiCMOS Bias Tee Data, ZS = ZL = 50  , TL dB W Si CMOS -20.0 Si BJT -40.0 0.0 RF MEMS NE InP HBT 0.5 1.0   1.5 2.0 Single Supply Operation: 5V at ID = 85mA No Dropping Resistor Required Patented Self Bias Circuitry Gain = 19.5dBm at 1950MHz P1dB = 19.2dBm at 1950MHz IP3 = 32.8dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Applications   S11 -30.0 GaN HEMT   2.5 3.0 PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 3.5 Frequency (GHz) FO R LDMOS Parameter Min. Specification Typ. Max. Unit Condition 20.7 18.0 22.2 23.7 dB 850MHz 19.5 21.0 dB 1950MHz 18.3 dB 2400MHz Output Power at 1dB Compression 20.6 dBm 850MHz 17.7 19.2 dBm 1950MHz 18.4 dBm 2400MHz Output Third Order Intercept Point 34.1 dBm 850MHz 30.8 32.8 dBm 1950MHz 31.4 dBm 2400MHz Input Return Loss 14 18 dB 1950MHz Output Return Loss 8 11 dB 1950MHz Noise Figure 2.4 3.4 dB 1930MHz Device Operating Voltage 5 V Device Operating Current 70 82 94 mA Thermal Resistance 70 °C/W junction to lead Test Conditions: VD = 5.0V, ID = 82mA, TL = 25°C, OIP3 Tone Spacing = 1MHz, Bias Tee Data, ZS = ZL = 50, POUT per tone = 0dBm NO T Small Signal Gain S22 -10.0 GaAs pHEMT   0.0 SiGe HBT   S21 10.0 Si BiCMOS  Gain and Return Loss VD = 5V, ID = 85mA DE GaAs HBT  SI GN S RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6489Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-6489Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS20160226 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 SGC-6489Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lCE) 100 Max Device Voltage (VCE) 7 V Max RF Input Power* (See Note) 3 dBm +150 °C -40 to +85 °C +150 °C Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature mA The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and