0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SPA-1426Z-EVB3

SPA-1426Z-EVB3

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    SPA-1426Z-EVB3 - 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER - RF Micro Devices

  • 数据手册
  • 价格&库存
SPA-1426Z-EVB3 数据手册
SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier Preliminary SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER RoHS Compliant and Pb-Free Product Package: SOF-26 Product Description RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT (dBc) Features P1dB =29.5dBm @ 2140MHz ACP = -65dBc with 17.0dBm Channel Power @ 2140MHz Low Thermal Resistance Package Power Up/Down Control
SPA-1426Z-EVB3 价格&库存

很抱歉,暂时无法提供与“SPA-1426Z-EVB3”相匹配的价格&库存,您可以联系我们找货

免费人工找货